DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT DIGITAL CMOS TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON《硅单片 二维卷积器 氧化物半导体数字微型电路》.pdf
《DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT DIGITAL CMOS TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON《硅单片 二维卷积器 氧化物半导体数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT DIGITAL CMOS TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON《硅单片 二维卷积器 氧化物半导体数字微型电路》.pdf(19页珍藏版)》请在麦多课文档分享上搜索。
1、SMD-59b2-93007 REV D 999999b 009042b 779 = DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER COLUMBUS 3990 EAST BROAD STREET COLUMBUS, OH 4321 6-5000 IN REPLY REFER ro: DSCC-VAC (Mr. Gauder/(DSN)850-545/614-692-545) DEC O 2 1996 SUBJECT: Notice of Revision (NOR) 5962-RO44-97 for Standard Microcircuit D
2、rawing (SMD) 5962-93007. Military/Industry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR sho
3、uld be attached to the subject SMD for future reference. Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DSCC a certificate of compliance. This is evidenced by an existing active current
4、 certificate of compliance on file at DSCC with a DSCC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DSCC is otherwise notified. DSCC has received and accepted a certificate of compliance from Logic Devices, cage
5、 code 65896 for PINS 5%2-9300701MYX, 5962-9300702MYX and 5962-9300703MYX and vendor similar part numbers LF48908GMB50, LF48908GMB37 and LF48908GMB25, respectively. This action will be reflected in the next revision of MIL-HDBK-103. If you have comments or questions, please contact Larry T. Gauder at
6、 (DSN)8504545/(614)692-0545. 1 Encl Chief, Custom Microelectroncs Team Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-93007 REV D 9999996 0090427 605 (YYMMDD) - 1. DATE 96-1 1-05 NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BE
7、EN AUTHORIZED FOR THE DOXVvlENT USTED. I I 9. TITLE OF DOCUMENT MICROCIRCUIT, DIGITAL, CMOS, TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON 1 O. REVISION LETTER a. CURRENT b. NEW C D Public reporting, burden for,thig +iec add “DI1. Revisions description colum; add IlChanges in accordance with NOR 5962
8、-R044-9718. Revisions date colm; add 196-11-0511. Revision level block; add I1Dmt. Rev status of sheets; for sheet 1 2, 3, and 8, add I1Da1. . Add the following package: Sheet 2: 1.2.4 me outlia Plbtline letter criotive desi- - IlY CWA15 -Pa 84 pi n- g r id ar ray“. Revision level block; add I1Dl8.
9、1.3 usolute maxm ratinw . Change from: Vhermal resistance:I to “Thermal resistance, Case X and YIi. Revision level block; add I1Dl8. Sheet 3: Sheet 8: FIGURE 1. JPrrninal connect iorig. Add Case I1X and YIi to top of figure. Revision level block; add 11Dm8 . TITLE Chief, Custom Microelectronics e. S
10、IGNATURE Monica L. Poelking f. DATE SIGNED (YYMMDD) 96-1 1-05 ID Form 1695, APR 92 Previous editions are obsolete. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-these tests shall have been fault graded in accordance with MIL-STD-883, test method 50
11、12 (see 1.5 herein). Subgroup 4 (C, and Co measurement) shall be measured only for the initial test and after process or design changes which may affect input or output capacitance. failures. c. Test all applicable pins on five devices uith zero STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPP
12、LY CENTER DAYTON, OHIO 45444 4.4.2 Group C inspection. lhe group C inspection end-point electrical parameters shall be as specified in table II herein. SIZE 5962-93007 A FEVISICNLNEL 9-EE-r r 12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Test re
13、quirements Device Device class M class P Subgrwps subgroups (in accordance with (in accordance with MIL-STD-883, MIL-1-38535, table I II 1 I I I I Final electrical parameters (see 4.21 Interim electrical parameters (see 4.2) 1, 2, 3, 7, 8, I/ 1, 2, 3, 7, 11 9, 10, 11 8, 9, 10, 11- Group A test requi
14、rements (see 4.4) I I 1, 2. 3, 4, 7, 8, 9, 10, 11 8, 9, 10, 11 1, 2, 3, 4, 7 Group D end-point electrical parameters (see 4.41 I I I I 1, 7, 9 Group C end-point electrical parameters (see 4.4) I 1, 7, 9 STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER I I I SIZE 5962-93007 A DAYTON, O
15、HIO 45444 I I I RNISICNLML SET C 13 Group E end-point electrical parameters (see 4.4) Device class V 1, 2, 3, 7, 21 8, 9, 10, 11 1, 2. 3, 4, 7, 8. 9. 10. 11 1, 7, 9 1, 7, 9 - 1/ PDA applies to subgroup I. - 2/ PDA applies to subgroups 1 and 7. 4.4.2.1 Additional criteria for device class M. Steady-s
16、tate life test conditions, method 1005 of MIL-STD-883: a. Test condition A, E, C or D. level control and shall be made available to the preparing or acquiring activity upon request. circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent
17、 specified in test method 1005. The test circuit shall be maintained by the manufacturer under docunent revision The test b. TA = +125OC, minim. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state
18、life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. The test circuit shall be maintained wider docunent revision Level control by the device manufacturers TRB, in accordance with M
19、IL-1-38535, and shall be made available to the acquiring or preparing activity upon request. accordance with the intent specified in test method 1005. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in 4.4.3 Group D inswction. The group D inspection
20、end-point electrical parameters shall be as specified in table II herein. I I I Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-73007 REV C = b 0072053 051 - STANDARD SIZE MICROCIRCUIT DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHI
21、O 45444 FWISICNLML C 4.4.4 Group E inswction. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). device class M shall be M and D. RHA levels for device classes P and V shall be M, D, L, R, F, G, and H and for a. b. End-point electrical
22、 parameters shall be as specified in table II herein. For device class U, the devices shall be subjected to radiation hardness assured tests as specified in MIL-1-38535, appendix A, for the RHA level being tested. vehicle shall be subjected to radiation hardness assured tests as specified in MIL-1-3
23、8535 for the RHA level being tested. defined in table 1 at TA = +25“C t5“C, after exposure, to the subgroups specified in table II herein. Uhen specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied. For device classes P and V, the devices or test ALL device cl
24、asses must meet the postirradiation end-point electrical parameter limits as c. 5. PACKAGING 5.1 herein) for device class M and MIL-1-38535 for device classes P and V. Packaging reauirements. The requirements for packaging shall be in accordance with MIL-STD-883 (see 3.1 6. NOTES 6.1 Intended use. M
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