DLA SMD-5962-92333 REV C-2006 MICROCIRCUIT DIGITAL CMOS 8-BIT EPROM MICROCONTROLLER WITH 10 BIT A D CAPTIVE COMPARE TIMER MONOLITHIC SILICON《硅单片 装有10位交流 直流比较时钟器的八位可擦可编程序只读存储器控制器 氧化.pdf

《DLA SMD-5962-92333 REV C-2006 MICROCIRCUIT DIGITAL CMOS 8-BIT EPROM MICROCONTROLLER WITH 10 BIT A D CAPTIVE COMPARE TIMER MONOLITHIC SILICON《硅单片 装有10位交流 直流比较时钟器的八位可擦可编程序只读存储器控制器 氧化.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-92333 REV C-2006 MICROCIRCUIT DIGITAL CMOS 8-BIT EPROM MICROCONTROLLER WITH 10 BIT A D CAPTIVE COMPARE TIMER MONOLITHIC SILICON《硅单片 装有10位交流 直流比较时钟器的八位可擦可编程序只读存储器控制器 氧化.pdf（29页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add devices 03 and 04. Add package Y. Change boilerplate to include class “N”. Editorial changes throughout. 96-07-05 Monica L. Poelking B Changes in accordance with NOR 5962-R188-96. 96-09-05 Monica L. Poelking C Update boilerplate to MIL-PRF-38

2、535 requirements. - CFS 06-06-14 Thomas M. Hess REV SHET REV C C C C C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED Thomas M. Hess DEFENSE SUPPLY CENTER COLUMBUS STANDAR

3、D MICROCIRCUIT DRAWING CHECKED BY Thomas M. Hess COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, CMOS, 8-BIT EPROM MICROCONTROLLER WITH 10-BIT A/D, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DR

4、AWING APPROVAL DATE 92-11-02 CAPTIVE/COMPARE TIMER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-92333 SHEET 1 OF 28 DSCC FORM 2233 APR 97 5962-E399-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

5、DRAWING SIZE A 5962-92333 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V

6、), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the

7、user is cautioned to assure that the device is appropriate for the application environment. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92333 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Le

8、ad finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes N, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA

9、levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 1/ 87C552 CMOS 8-bit EPROM microcontroller with 10-bit A/D, captive/comp

10、are timer, high speed outputs, and PWM 02 2/ 87C552 CMOS 8-bit EPROM microcontroller with 10-bit A/D, captive/compare timer, high speed outputs, and PWM, one time programmable 03 2/ 87C552 CMOS 8-bit EPROM microcontroller with 10-bit A/D, captive/compare timer, high speed outputs, and PWM, one time

11、programmable 04 2/ 87C552 CMOS 8-bit EPROM microcontroller with 10-bit A/D, captive/compare timer, high speed outputs, and PWM, one time programmable 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device

12、requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A N Certification and qualification to MIL-PRF-38535 with a nontraditional performance environment (encapsulated in pla

13、stic) Q or V Certification and qualification to MIL-PRF-38535 _ 1/ For device type 01, lid shall be transparent to permit ultraviolet light erasure. 2/ One time programmable part only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIR

14、CUIT DRAWING SIZE A 5962-92333 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835, JEDEC Publication 95, and as follows: Outline letter Descriptive designator Terminals P

15、ackage style M GQCC1-J68 68 “J” lead chip carrier Y See figure 1 44 Plastic “J” lead chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes N, Q, and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Voltage range on any

16、pin to VSS. -0.5 V dc to +6.5 V dc Voltage range on EA/VPPpin to VSS. -0.5 V dc to +13.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) 1 W Lead temperature (soldering, 5 seconds). +300C Thermal resistance, junction-to-case (JC): Case outline M See MIL-STD-1835 Case outl

17、ine Y. 15c/W 1.4 Recommended operating conditions. Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Maximum low level input voltage: (except EA, P1.6/SCL, P1.7/SDA) . 0.2VDD 0.25 V dc EA 0.2VDD 0.45 V dc (P1.6/SCL, P1.7/SDA) 2/. 0.3VDDMinimum high level input voltage: (except XTAL1, RST, P1.6/SCL,

18、P1.7/SDA) 0.2VDD+ 0.1 V dc (XTAL1, RST) 0.7VDD+ 0.2 V dc (P1.6/SCL, P1.7/SDA) . 0.7VDDCase operating temperature range (TC): Device types 01, 02. -55C to +125C Device type 03 -40C to +85C Device type 04 -40C to +125C Oscillator frequency . 3.5 MHz to 12 MHz _ 1/ Stresses above the absolute maximum r

19、ating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The input threshold voltage of P1.6 and P1.7 (SIO) meets the I2C specification, so an input voltage below 1.5 V will be recognized as a logic 0 while an input v

20、oltage above 3.0 V will be recognized as a logic 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92333 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 9

21、7 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contrac

22、t. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOK

23、S MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building

24、 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONICS INDUSTRIES ALLIANCE (EIA) JE

25、P 95 - Registered and Standard Outlines for Semiconductor Devices (Copies of this document are available online at www.jedec.org/ or from the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.3 Order of precedence. In the event of a conflict between the text of thi

26、s drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classe

27、s N, Q, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class

28、M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes N, Q, and V or

29、MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specifi

30、ed on figure 3. 3.2.4 Timing waveforms. The timing waveforms shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92333 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 R

31、EVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

32、case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the

33、manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for d

34、evice classes N, Q, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes N, Q, and V shall be a “QML” or “Q” as required in MIL-PRF-38535. The

35、compliance mark for device class M shall be a “C” as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes N, Q, and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.

36、6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this dr

37、awing shall affirm that the manufacturers product meets, for device classes N, Q, and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device c

38、lasses N, Q, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involvin

39、g devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Off

40、shore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A). 3.11 Processing EPROMs. All testing requ

41、irements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.11.1 Erasure of EPROMs. When specified, devices shall be erased in accordance with the procedures and characteristics specified in 4.5. 3.11.2 Programmability of EPROMs. When specified, devic

42、es shall be programmed to the specified pattern using the procedures and characteristics specified in 4.6 and table III. 3.11.3 Verification of erasure of programmability of EPROMs. When specified, devices shall be verified as either programmed to the specified pattern or erased. As a minimum, verif

43、ication shall consist of performing a functional test (subgroup 7) to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. Provided by IHSNot for ResaleNo reproduction or networking

44、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92333 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. See footnotes at end of table. Limits Test Symbol Conditions

45、 1/ 2/ 4.5 V VDD 5.5 V unless otherwise specified Group A subgroupsDevice types Min Max Unit Output low voltage, ports 1-4, (except P1.6/SCL, P1.7/SDA) VOLIOL= +1.6 mA 3/ 0.45 V Output low voltage, port 0, ALE, PSEN, PWM0, PWM1 VOL1IOL= +3.2 mA 3/ 0.45 V Output low voltage, P1.6/SCL, P1.7/SDA VOL2IO

46、L= +3.0 mA 3/ 0.4 V IOH= -60 A 2.4 IOH= -25 A 0.75VDD Output high voltage, ports 1-4, (except P1.6/SCL, P1.7/SDA) VOHIOH= -10 A 0.9VDD V IOH= -400 A 2.4 IOH= -150 A 0.75VDD Output high voltage, port 0 in external bus mode, ALE, PSEN, PWM0, PWM1 VOH14/ IOH= -40 A 0.9VDD V IOH= -400 A 2.4 High level o

47、utput voltage (RST) VOH2IOH= -120 A 0.80VDD V Logic 0 input current ports 1-4 (except P1.6/SCL, P1.7/SDA) IILVIN= 0.45 V 0.0 -75 A Input leakage current, port 0, EA, STADC, EW IIL10.45 V 100 pF), the noise pulse on the ALE pin may exceed 0.8 V. In such cases, it may be desirable to qualify ALE with

48、a Schmitt trigger, or use an address latch with a Schmitt trigger strobe input. IOLcan exceed these conditions provided that no single output sinks more than 5 mA and no more than two outputs exceed the test conditions. 4/ Capacitive loading on ports 0 and 2 may cause the VOHon ALE and PSEN to momen

49、tarily fall below the 0.9VCCspecification when the address bits are stabilizing. 5/ Pins of ports 1 (except P1.6, P1.7), 2, 3, and 4 source a transition current when they are being externally driven from 1 to 0. The transition current reaches its maximum value when VINis approximately 2 V. 6/ The following conditio