DLA SMD-5962-91619 REV A-2000 MICROCIRCUIT LINEAR WINDOW VOLTAGE COMPARATOR MONOLITHIC SILICON《硅单块 窗口电压比较器 直线式微型电路》.pdf

《DLA SMD-5962-91619 REV A-2000 MICROCIRCUIT LINEAR WINDOW VOLTAGE COMPARATOR MONOLITHIC SILICON《硅单块 窗口电压比较器 直线式微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91619 REV A-2000 MICROCIRCUIT LINEAR WINDOW VOLTAGE COMPARATOR MONOLITHIC SILICON《硅单块 窗口电压比较器 直线式微型电路》.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Drawing updated to reflect current requirements. - ro 00-09-28 R. MONNINREVSHEETREVSHEETREV STATUS REV AAAAAAAAAAOF SHETS SHET 12345678910PMIC N/A PREPARED BY MARICA B. KELLEHERDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYSANDR

2、A B. ROONEYCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMICHAEL A. FRYEMICROCIRCUIT, LINEAR, WINDOW VOLTAGECOMPARATOR, MONOLITHIC SILICONAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE93-10-20AMSC N/AREVISION LEVELASIZEACAGE CODE672685962-91619SHEET1

3、 OF 10DSCC FORM 2233APR 97 5962-E592-00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91619DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS,

4、 OHIO 43216-5000REVISION LEVELASHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are refle

5、cted in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 - 91619 01 M P X G7EG7E G7EG7E G7EG7EG7EG7E G7EG7E G7EG7EG7E G7E G7E G7E G7E G7E Federal RHA Device De

6、vice Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropr

7、iate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generi

8、c number Circuit function01 LTC1042 Voltage comparator, window1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883

9、compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleP G

10、DIP1-T8 or CDIP2-T8 8 Dual-in-line1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWI

11、NGSIZEA5962-91619DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/Supply voltage (V+ to GND) +18 V dcInput voltage range (VIN) V+ + 0.3 V to 0.3 VStorage temperature range .-55G71C to +150G71CLead temperature (soldering,

12、10 seconds) .300G71COutput short circuit duration ContinuousJunction temperature (TJ) .+150G71CThermal resistance, junction-to-case (G54JC) .See MIL-STD-1835Thermal resistance, junction-to-ambient (G54JA) 100G71C/W1.4 Recommended operating conditions.Input voltage range (VIN) V+ to GNDAmbient operat

13、ing temperature range (TA) .-55G71C to +125G71C2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are

14、 those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD

15、-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless other

16、wise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at

17、 themaximum levels may degrade performance and affect reliability.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91619DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET4DSCC FORM 2234APR

18、 972.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the tex tof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMEN

19、TS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as

20、 described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specif

21、iedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Block

22、diagram. The block diagram shall be as specified on figure 2.3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post irradiation parameter limits are as specified in table I and shall appl

23、y over thefull ambient operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In

24、 addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designato

25、r shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as re

26、quired inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements o

27、f this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source o

28、f supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required

29、 for device classes Q and V in MIL-PRF-38535 or fordevice class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) in

30、volving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation.

31、 Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 74 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduct

32、ion or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91619DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET5DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.Test SymbolConditions-55G71C G64 TAG64 +125G71Cunless ot

33、herwise specifiedGroup AsubgroupsDevicetypeLimits UnitMin MaxCenter error 1/ 2/ 3/ CE V+ = 2.8 V to 6 V andwidth / 2 = 10 mV1,2,3 01 G721 mVV+ = 6 V to 15 V andwidth / 2 = 10 mVG723Width error 1/ 4/ 5/ WE V+ = 2.8 V to 6 V andwidth / 2 = 10 mV1,2,3 01 G722 mVV+ = 6 V to 15 V andwidth / 2 = 10 mVG726

34、Average input resistanceRINfS= 1 kHz 6/1,2,3 01 10 MG3APower supply “ON” currentIS(ON)V+ = 5 V 7/ 1,2,3 01 3 mAPower supply “OFF”currentIS(OFF)V+ = 5 V 7/ 1,2,3 01 5.0 G50AResponse time TD V+ = 5 V 8/ 1,2,3 01 100 G50sHigh voltage outputVOHV+ = 4.75 V,IOUT= -360 G50A1,2,3 01 2.4 VLow voltage outputV

35、OLV+ = 4.75 V,IOUT= 1.6 mA1,2,3 01 0.45 V1/ Applies over the input voltage range limit and includes gain uncertainty.2/ Center error = (VU+ VL) / 2 CENTER (where VU= upper band limit and VL= lower band limit).3/ Center error depends upon the bias applied to the WIDTH / 2 pin. The relationship of the

36、 WIDTH / 2 pin to the Centererror test is: Center error is G721 mV G72 .15 percent of WIDTH / 2 for +V = 2.8 V to 6 V; Center error is G723 mV G72 .15 percentof WIDTH / 2 for +V = 6 V to 15 V.4/ Width error = (VU VL- 2 x WIDTH / 2) (where VU= upper band limit and VL= lower band limit).5/ Width error

37、 depends upon the bias applied to the WIDTH / 2 pin. The relationship of the WIDTH / 2 pin to the Widtherror test is: Width error is G722 mV G72 0.3 percent of WIDTH / 2 for +V = 2.8 V to 6 V; Width error is G726 mV G72 0.3 percentof WIDTH / 2 for +V = 6 V to 15 V.6/ RINis guaranteed, if not tested,

38、 to the limits specified. RIN= 1(fSx 66 pF).7/ Average supply current = TDx IS(ON)x fS+ (1 TDfS) IS(OFF).8/ Response time is set by an internal oscillator and is independent of overdrive voltage. TDis guaranteed by correlationtests and is not directly measured.Provided by IHSNot for ResaleNo reprodu

39、ction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91619DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET6DSCC FORM 2234APR 97Device type 01Case outline PTerminalnumberTerminal symbol1 WITHIN WINDOW2 CENTER3VIN4GND5 WIDTH / 26 A

40、BOVE WINDOW7OSC8V+FIGURE 1. Terminal connections.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91619DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET7DSCC FORM 2234APR 97FIGURE 2. Bloc

41、k diagram.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91619DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET8DSCC FORM 2234APR 974. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspe

42、ction. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M,

43、sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class

44、M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C, or D. The test circuit shall be maint

45、ained by the manufacturer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.

46、(2) TA= +125G71C, minimum.b. Interim and final electrical test parameters shall be as specified in table II herein.4.2.2 Additional criteria for device classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manuf

47、acturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufacturers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon reque

48、st. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod 1015 of MIL-STD-883.b. Interim and final electrical test parameters shall be as specified in table II herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed sh