DLA SMD-5962-91552 REV B-2005 MICROCIRCUIT LINEAR ANALOG SWITCH SPDT 2-CHANNEL WB VIDEO MONOLITHIC SILICON《硅单块 韦伯 视频2沟道单刀双掷模拟开关 直线式微型电路》.pdf

《DLA SMD-5962-91552 REV B-2005 MICROCIRCUIT LINEAR ANALOG SWITCH SPDT 2-CHANNEL WB VIDEO MONOLITHIC SILICON《硅单块 韦伯 视频2沟道单刀双掷模拟开关 直线式微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91552 REV B-2005 MICROCIRCUIT LINEAR ANALOG SWITCH SPDT 2-CHANNEL WB VIDEO MONOLITHIC SILICON《硅单块 韦伯 视频2沟道单刀双掷模拟开关 直线式微型电路》.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R057-94. 93-11-29 Michael A. Frye B Incorporate revision A NOR. Update drawing to current requirements. Editorial changes throughout. - drw 05-01-13 Raymond Monnin REV SHET REV SHET REV STATUS REV B B B B B B B

2、 B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MI

3、CROCIRCUIT, LINEAR, ANALOG SWITCH, SPDT, 2-CHANNEL, WB/VIDEO, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-11-18 MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-91552 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E065-05 Provided by IHSNot for ResaleNo repro

4、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91552 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consistin

5、g of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

6、1.2 PIN. The PIN is as shown in the following example: 5962 - 91552 01 M E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q

7、and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device

8、. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 DG542 Dual SPDT wideband/video “T” switch 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows:

9、Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is a

10、s designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided

11、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91552 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ V+ to V- -0.3 V dc to 21

12、V dc Ground to V-. -0.3 V dc to 10 V dc Digital inputs 2/ . (V-) 0.3 V dc to (V+) + 0.3 V dc VS, VDto V- 2/. (V-) 0.3 V dc to (V+) + 14 V dc Current (any terminal), continuous 20 mA Current, S or D, pulsed, 1 ms, 10% duty cycle . 40 mA Power dissipation (PD) 3/ 900 mW Maximum junction temperature (T

13、J) +150C Lead temperature (soldering, 10 seconds max) +300C Storage temperature range. -65C to +150C 1.4 Recommended operating conditions. V+ . 15 V dc V- . -3 V dc GND . 0 V dc Ambient temperature range (TA). -55C to +125C Bandwidth (RL= 50). 500 MHz OFF isolation (TA= 25C). -75 dB (typical) Crosst

14、alk (TA= 25C) . -85 dB (typical) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited

15、 in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

16、 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Des

17、k, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulat

18、ions unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Signals on Sx, Dx, or Inx exceeding V+ or V- will be clamped by in

19、ternal diodes. Limit forward diode current to maximum current ratings. 3/ Device mounted with all leads soldered or welded to PC board. Derate 12 mW/C above +75C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

20、62-91552 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the

21、device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as speci

22、fied herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in

23、accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Functional block diagram. The functional block diagram shall be as specified on figure 3. 3.3 Electrical p

24、erformance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requi

25、rements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where ma

26、rking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-3

27、8535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MI

28、L-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be r

29、equired from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device cla

30、sses Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, app

31、endix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this

32、 drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the review

33、er. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 82 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D

34、RAWING SIZE A 5962-91552 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C V+ = 15 V, V- = -3 V, VINH= 2 V, VINL= 0.8 V, GND = 0 V Group A subgroups Device type

35、 Limits 1/ Unit unless otherwise specified Min Max Analog signal range 2/ VANALOGV- = -5 V 1, 2, 3 01 -5 8 V Drain-source ON resistance rDS(ON) IS= -10 mA, VD= 0 V, VIN= 2 V 1, 3 01 5 60 2 100 Resistance match between channels rDS(ON) IS= -10 mA, VD= 0 V, VIN= 2 V 1 01 6 Source OFF leakage current I

36、S(OFF) VS= 0 V, VD= 10 V, VIN= 0.8 V 1 01 10 nA 2, 3 500 Drain OFF leakage current ID(OFF) VS= 10 V, VD= 0 V, VIN= 0.8 V 1 01 10 nA 2, 3 500 Total switch ON leakage current ID(ON) + IS(ON) VS= 0 V, VD= 0 V, VIN= 2 V 1 01 10 nA 2, 3 1000 Input voltage high VINH7, 8 01 2 V Input voltage low VINL7, 8 0

37、1 0.8 V Input current IINVIN= 0.8 V or 2.0 V 1 01 1 A 2, 3 20 Positive supply current I+ All channels ON or OFF, VIN= 0.8 V or 2.0 V 1, 2 01 0.5 5 mA 3 0.5 7 Negative supply current I- All channels ON or OFF, VIN= 0.8 V or 2.0 V 1, 2 01 -5 -0.5 mA 3 -7 -0.5 Functional tests See 4.4.1b 7, 8 01 See fo

38、otnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91552 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical perfo

39、rmance characteristics - continued. Test Symbol Conditions -55C TA +125C V+ = 15 V, V- = -3 V, VINH= 2 V, VINL= 0.8 V, GND = 0 V Group A subgroups Device type Limits 1/ Unit unless otherwise specified Min Max Turn ON time tONRL= 1 k, CL= 35 pF, 50% to 90% 9 01 10 70 ns 10, 11 10 140 Turn OFF time tO

40、FFRL= 1 k, CL= 35 pF, 50% to 90% 9 01 10 50 ns 10, 11 10 85 Break-before-make interval tOPENtOPEN= tON- tOFF1 01 10 200 ns OFF state input capacitance CS(OFF) VS= 0 V, see 4.4.1c 4 01 4 pF OFF state output capacitance CD(OFF) VD= 0 V, see 4.4.1c 4 01 4 pF ON state input capacitance CS(ON) VS= VD= 0

41、V, see 4.4.1c 4 01 20 pF 1/ The limiting terms “min” (minimum) and “max” (maximum) shall be considered to apply to magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 2/ Guaranteed by design, but not tested. Provided by IHSNot for ResaleNo reprod

42、uction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91552 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline E Terminal number Terminal symbol 1 IN12 D13 GND 4 S15 V- 6

43、S47 GND 8 D49 D310 GND 11 S312 V+13 S214 GND 15 D216 IN2FIGURE 1. Terminal connections. Logic Switch 1, 2 Switch 3, 4 0 OFF ON 1 ON OFF FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9

44、1552 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 FIGURE 3. Functional block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91552 DEFENSE S

45、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Mana

46、gement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance

47、 with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Addition

48、al criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table I