DLA SMD-5962-91546 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS ONE TIME PROGRAMMABLE LOGIC ARRAY MONOLITHIC SILICON《硅单块 一次可编程逻辑阵列 互补金属氧化物半导体 数字主储存器微型电路》.pdf

《DLA SMD-5962-91546 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS ONE TIME PROGRAMMABLE LOGIC ARRAY MONOLITHIC SILICON《硅单块 一次可编程逻辑阵列 互补金属氧化物半导体 数字主储存器微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91546 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS ONE TIME PROGRAMMABLE LOGIC ARRAY MONOLITHIC SILICON《硅单块 一次可编程逻辑阵列 互补金属氧化物半导体 数字主储存器微型电路》.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added low power version with an access time of 35 ns for CAGE number 1FN41. Editorial changes throughout. Redrawn. 93 - 01 - 11 Rajesh Pithadia B Boilerplate update, part of 5 year review. ksr 07-01-29 Joseph Rodenbeck THE ORIGINAL FIRST PAGE OF

2、THIS DRAWING HAS BEEN REPLACED. REV SHEET REV B B B SHEET 15 16 17 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWI

3、NG CHECKED BY Charles Reusing APPROVED BY Michael A. Frye DRAWING APPROVAL DATE 91 - 07 - 25 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-91546 THIS DRAWING IS AVAILABLE FOR USE BY All DEPARTMENTS AND AGENCIES OF THE DEPARTMEN

4、T OF DEFENSE AMSC N/A REVISION LEVEL B SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E014-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91546 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION

5、LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or

6、Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 91546 01 M Q A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.

7、2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535,

8、 appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Standby Device type Generic number 1/ Circuit function Access time 01 38-input, 24-outp

9、ut and-or-logic array 35 ns 02 38-input, 24-output and-or-logic array 25 ns 03 38-input, 24-output and-or-logic array, low power 35 ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requireme

10、nts documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL

11、-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Q GDIP1-T40 or CDIP2-T40 40 dual-in-line X CQCC1-N44 44 flat pack Y See figure 1 44 quad cerpac chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-P

12、RF-38535, appendix A for device class M. _ 1/ Generic numbers are listed on the Standard Microcircuit Drawing Bulletin at the end of this document and will also be listed in MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

13、CIRCUIT DRAWING SIZE A 5962-91546 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range. -0.5 V dc to +7.0 V dc Input voltage range -2.0 V dc to +7.0 V dc 4/ Output voltage applied -0.5 V dc to

14、 +7.0 V dc 4/ Output sink current 8 mA Thermal resistance, junction-to-case (JC): Cases Q, X See MIL-STD-1835 Case Y 20C/W Maximum power dissipation (PD) 5/ 1.2 W Maximum junction temperature . +175C Lead temperature (soldering, 10 seconds maximum) . +300C 1.4 Recommended operating conditions. Suppl

15、y voltage range (VCC) . 4.5 V dc minimum to 5.5 V dc maximum Supply voltage (VSS) 0.0 V dc High level input voltage range (VIH) - 2.0 V dc minimum Low level input voltage range (VIL) 0.8 V dc maximum Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specifica

16、tion, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-385

17、35 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Dra

18、wings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Governm

19、ent publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Me

20、asurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) _ 2/ Stresses above the absolu

21、te maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ All voltages referenced to VSS. 4/ Minimum voltage is -0.6 V dc which may undershoot to -2.0 V dc for pulses of less than 20 ns. Maximum output pin

22、voltage is VCC+0.75 V dc which may overshoot to +7.0 V dc for pulses of less than 20 ns. 5/ Must withstand the added PDdue to short circuit test; e.g., IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-915

23、46 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulev

24、ard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of preced

25、ence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirem

26、ents. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535, and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herei

27、n. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device clas

28、ses Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s

29、) shall be as specified on figure 3. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 3 herein. When required in screening (see 4.2 herein), or qualification conformance inspection groups A, B, C, o

30、r D (see 4.3 herein), the devices shall be programmed by the manufacturer prior to test in a checkerboard or similar pattern (a minimum of 50 percent of the total number of gates programmed). 3.2.3.2 Programmed devices. The truth table for programmed devices shall be as specified by an attached alte

31、red item drawing. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature r

32、ange. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Unless otherwise specified, the values specified in table I are the preirradiation and postirradiation values. Postir

33、radiation electrical measurements for any RHA level are tested at, TA= +25C. 3.5 Verification of programmability. When specified, devices shall be verified as either programmed (see 4.7 herein) to the specified pattern or erased (see 4.6 herein). As a minimum, verification shall consist of performin

34、g a functional test (subgroup 7) to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. 3.6 Processing options. Since the device is capable of being programmed by either the manufac

35、turer or the user to result in a wide variety of configurations; two processing options are provided for selection in the contract. 3.6.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1 and table IIA. It is recommended that users

36、 perform subgroups 7 and 9 after programming to verify the specific program configuration. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91546 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISI

37、ON LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6.2 Manufacturer programmed device delivered to the user. All testing requirements and quality assurance provisions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. 3.7 Marking. The pa

38、rt shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product usi

39、ng this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.7.1 Certification/compliance mark. The certification mark for device classes Q a

40、nd V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.8 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in

41、order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA p

42、rior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.9 Certificate of conformance

43、. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.10 Notification of change for device class M. For device class M, notification to DS

44、CC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.11 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturer

45、s facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.12 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, a

46、ppendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, o

47、r function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification a

48、nd technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. Devices shall be bur