DLA SMD-5962-90983 REV A-2002 MICROCIRCUIT LINEAR DRIVER POWER HIGH CURRENT QUAD MONOLITHIC SILICON《硅单块 四列高电流功率驱动器 直线式微型电路》.pdf
《DLA SMD-5962-90983 REV A-2002 MICROCIRCUIT LINEAR DRIVER POWER HIGH CURRENT QUAD MONOLITHIC SILICON《硅单块 四列高电流功率驱动器 直线式微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90983 REV A-2002 MICROCIRCUIT LINEAR DRIVER POWER HIGH CURRENT QUAD MONOLITHIC SILICON《硅单块 四列高电流功率驱动器 直线式微型电路》.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - lgt 02-01-30 Raymond Monnin REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICR
2、OCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, DRIVER, POWER, HIGH CURRENT, QUAD, MONOLITHIC AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 9
3、3-12-08 SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90983 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E236-02 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-
4、,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90983 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space
5、application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 59
6、62 - 90983 01 M C X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified
7、 RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the c
8、ircuit function as follows: Device type Generic number Circuit function 01 D469AA Quad high current power driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor s
9、elf-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outli
10、ne letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking
11、 permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90983 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (V+) 18 V dc Digital input voltage -0.3 V dc to (V+ + 0.3 V
12、dc) Output current. 1.5 A DC continuous current on any output . 100 mA AC time average current. 100 mA Power dissipation (PD), TA= 50C 2/ 825 mW Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 91C/W Storage temperature range. -65C to +150C Le
13、ad temperature (soldering, 10 seconds). +300C Junction temperature (TJ) . +150C 1.4 Recommended operating conditions. Operating ambient temperature range (TA) -55C to +125C Supply voltage (V+) 15 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following speci
14、fication, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the soli
15、citation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF
16、 DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia,
17、 PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derating above TA= 50C at 11 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted
18、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90983 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein,
19、the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-P
20、RF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, ap
21、pendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device cla
22、ss M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 2. 3.3 Electrical performance characteristics and post
23、irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requir
24、ements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of
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