DLA SMD-5962-90574-1990 MICROCIRCUITS DIGITAL HIGH SPEED CMOS 8-BIT SYNCHRONOUS BCD DOWN COUNTER TTL COMPATIBLE MONOLITHIC SILICON《硅单片 TTL可兼容输入 8位同步二-十进降值计数器 高速氧化物半导体 数字微型电路》.pdf
《DLA SMD-5962-90574-1990 MICROCIRCUITS DIGITAL HIGH SPEED CMOS 8-BIT SYNCHRONOUS BCD DOWN COUNTER TTL COMPATIBLE MONOLITHIC SILICON《硅单片 TTL可兼容输入 8位同步二-十进降值计数器 高速氧化物半导体 数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90574-1990 MICROCIRCUITS DIGITAL HIGH SPEED CMOS 8-BIT SYNCHRONOUS BCD DOWN COUNTER TTL COMPATIBLE MONOLITHIC SILICON《硅单片 TTL可兼容输入 8位同步二-十进降值计数器 高速氧化物半导体 数字微型电路》.pdf(14页珍藏版)》请在麦多课文档分享上搜索。
1、i LTR DESCRIPTION RCITE (MI-LIO-DA) APPROVED AMSC NIA SHEET i OF 14 I I *US. COVIRNMENT PRINTING OffKt: 1W7 - 74 distribution Is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-L SMD-5962-70574 59 m 999999b 0000978 4 m STANDARDIZED MILITAR
2、Y DRAWING 1. SCOPE Scope. This drawing describes device regUireMntS for class B microcircuits in accordance rith 1.mf MIL-STD-883, Provisions for the use of MIL-STD-883 in conjunction with compliant ion-JAN devices .2 Part number. The complete part number shall be as shown in the following example:
3、SIZE A 5962-90574 5462-90574 I I o1 -r I E -r I X T I I I I I Drawing number Device type Case outline Lead finish per (1.2.1) (1.2.2) MI L-M-38510 1.2.1 Device type. The device type shall identify the circuit function as follows: Device type Generic number Circuit function o1 54HCT40102 8-bit synchr
4、onous BCD down counter, TTL compati 61 e i nputc 1.2.2 Case outline. The case outline shall be as designated in appendix C of MIL-M-38510, and as Out1 i rie 1 etter 01 1 ows : Case outline E D-2 (16-lead, .840“ x .310“ x .200“), dual-in-line package 1.3 Absolute maximum ratings. - i/ Supply voltage
5、range (Vcc) - - - - - - - - - DC input voltage range - - - - - - - - - - - DC output voltage range- - - - - - - - - - - DC input diode current - - - - - - - - - - - DC output diode current (per pin1 - - - - - DC drain current (per pin) - - - - - - - - M: Vcc or GND current - - - - - - - - - - - Stor
6、age temperature range - - - - - - - - - Maximum power dissipation (P,) - - - - - - - Lead temperature (soldering, 10 seconds) - - Thema1 resi c tance, junction- to-case ( IJ,) - Junction temperature (TJ) - - - - - - - - - -0.5 V dc to +7.0 V dc -0.5 V dc to Vcc + 0.5 V dc -0.5 V dc to Vcc + 0.5 V dc
7、 *20 mA *20 mA *25 mA *50 mA -65C to +150C 500 mW g/ +3OO0C See MIL-M-38510, appendix C +175“C - i/ - 21 Unless otherwise specified, all voltages are referenced to ground, For TC = +lOOC to +125C, derate linearly at 8 mW/C. DEFENSE ELECTRONICS SUPPLY CENTER REMSiON LEVU SHEET I 2 DAYTON, OHIO 45444
8、* U. S. GOVERNMENT PRIMING OFFNE: lSBB-54P9op DESC FORM 193A SEP 87 , Y Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-. STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICC SUPPLY CEHIER DAYTON, OHIO 45444 1.4 Recormended operating conditions. supply
9、voltage range (Vcc) - - - - - - - - SIZE A 5962-90574 RMSION LEVEL SHEET 3 Input voltage range (VIN) - - - - - - - - Output voltage range VouT) - - - - - - - Lase operatiiiy temperature range (TC)- - - t4.5 V dc to t5.5 V dc 0.0 V dc to Vcc 0.0 V dc to Vcc -55C to +125OC Input rise or fall time (tr,
10、 tf): vcc= 4,5y - - - - - - - - - - - - - - Maximum CP frequency (fmx): TC = +25C, Vcc = 4.5 V T - -55C to +125“C, Vcc = 4.5 V - - - - - - - - - - - C- Minimum pulse width, 19-W SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.4 Recommended o
11、perating conditions - Continued, Rinimum hold time,. Pn to CP (thIl: I Tc = *%Cy Vcc = 4.5 Vr - - - - - - - - Te, = -55C to +125=C, Vcc =i 4.5 V - - - 5 ns 5 n. Mfnimum hold time, “E to CP (th2): Tc. = +25OC, Vcc = 4.5 V - - - - - - - - o. nc 0. ns Tc = -55C to +125OC, Vcc. = 4.5 V - - - Irlinimum h
12、oTd. tiriie,. PF ta CP (thSI: TC = +2ScC, Vcc = 4.5. V+ - - - - - - - - IE = -55C to *125c, YCG = 4.8 v- - - - 2 ns 2 ns 2. APPLICABLE DOCUMENTS Unless otherwise specified, the ssue Tisted in that fscue of the ards specffied in the salicitatiian, form a part of thls drawing to the extent specified h
13、erein MIL 1.TARY MIL-M-38510 - Microcircui ts, General Specification for. STANDARD M1 LI TARY ML-ST-883 - Test Methods and Procedures for MicroeTectronics. BULLETIN MLLIBARY M1L-BUL-ZO3. - Lis at Stendardized M ary rawi ngs ( SMD s) . (Copies of the specification, standard, and budletin requfred by
14、manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as di rected by the contract1 ng activity references cited herein, the text of this drawing shall take precedence. 2.2 Order of precedence, In the event of a con t beween the text af t
15、his drawing and the SIZE . A 5962-90574 STANDARDIZU) MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY Cm REVISION LEVEL SHEET DAYTON, OHIO 45444 4 b *V. 8. QOVERNMENT PRINTiNQ OFicE 1888-549-904 DECC FORM T93A SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro
16、m IHS-,-,-* I z STANDARDIZED SIZE 3, REQUIREMENTS 3.1 Item requirements, The individual item requirements shall be in accordance with 1.2.1 of IIL-STD- ind as sp%fi!d hlrein. I rov sions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ 3.2 Design, construction, and hysical d
17、imensions. The design, construction, and physical MIL-lq-385m and herein. iimensions shal I be as specified 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Truth table. The truth table shall be as specified on figure 2. 3.2.3 Logic diagram. The logic dia
18、gram shall be as specified on figure 3. 3.2.4 Timing diagram. The timing diagram shall be as specified on figure 4. 3.2.5 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical ierformance
19、 characteristics are as specified in table I and apply over the full case operating ;emperatwe range. pxified in table II. The electrical tests for each subgroup are described in table I. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups 3.5 Marking, Marking s
20、hall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall In addition, the manufacturers part number le marked with the part number listed in 1.2 herein. lay also be marked as listed in MIL-BUL-103 (see 6.6 herein). 3.6 Certificate of compliance. A certificate of compliance shall be re
21、quired from a ianufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.6 ierein). The certificate of compliance submitted to DESC-ECS prior to listing as an approved ource of supply shall affirm that the manufacturers product meets the requirements of IIL-STD-883 ( se
22、e 3.1 herein) and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-STD-883 (see .1 herein) shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DESC-ECS shall be requi
23、red in accordance ith MIL-STD-883 ( see 3.1 herein). 3.9 Verification and review. DESC, DESCs agent, and the acquiring activity retain the option o review the manufacturers facility and applicable required documentation. Offshore ocumentation shall be made available onshore at the option of the revi
24、ewer. I I I - itiJ.S.GoMRNMEHTPfdHTINaoFFNE: 1wo-MB-M DESC FORM 193A SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical performance characteristics. I I I I Lmits I I I -55C Tc +125OC i/ Isubgroupsl Min I Max I I I I unless ot
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