DLA SMD-5962-87753-1988 MICROCIRCUIT DIGITAL CMOS ANALOG MULTIPLEXER DEMULTIPLEXER FOUR-POLE DOUBLE-THROW MONOLITHIC SILICON《硅单片双抛四刀类比多工器 解多工器互补型金属氧化物半导体数字微电路》.pdf
《DLA SMD-5962-87753-1988 MICROCIRCUIT DIGITAL CMOS ANALOG MULTIPLEXER DEMULTIPLEXER FOUR-POLE DOUBLE-THROW MONOLITHIC SILICON《硅单片双抛四刀类比多工器 解多工器互补型金属氧化物半导体数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-87753-1988 MICROCIRCUIT DIGITAL CMOS ANALOG MULTIPLEXER DEMULTIPLEXER FOUR-POLE DOUBLE-THROW MONOLITHIC SILICON《硅单片双抛四刀类比多工器 解多工器互补型金属氧化物半导体数字微电路》.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、DESC-DWG-87753 57 7777775 0011237 3 I/- distribution is unlimited. LI U.S. GOVfRNMfNl PRINTING OFFICE: 1987 - 748-1291WI I 5962- E659 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 Scppe. This drawing describes device requirements for c
2、lass B microcircuits in accordance with 1.2.1 of MIL-STD-883, Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. 1.2 Part number. The complete part number shall be as shown in the following example: 5753 o1 E X i l- I I I I Lead finish per Drawing number Devi ce ty
3、pe Case out1 i ne (1.2.1) (1.2.2) MIL-M-38510 12.1 Device types. The device types shall identify the circuit function as follows: Device type Generic number Circuit function o1 145518 Analog mu1 tiplexer/demul tiplexer four-pole, double-throw. 1.2.2 Case outlines, The case outlines shall be as desig
4、nated in appendix C of MIL-M-38510, and as follows: Outline letter Case outline E D-2 (16-lead, ,840“ x ,310“ x .200“), dual-in-line package 1.3 Absolute maximum ratings. Supply voltage range (VDD) - - - - - - - - - - - - - - - - Input voltage range- - - - - - - - - - - - - - - - - - - Input current
5、 (OC or transient), per control pin - - - - - Switch through current - - - - - - - - - - - - - - - - - - Storage temperature range- - - - - - - - - - - - - - - - - Maximum power dissipation (PD) i/ - - - - - - - - - - - Thermal resistance, junction-to-case (eje) : CaseE- See MIL-M-38510, appendix C
6、Junction temperature (T,J)- - - - - - - - - - - - - - - - - -0.5 V dc to +18.0 V dc -0.5 Y dc to VDD + 0.5 V dc *lo in4 I25 mA -65C to +150C 500 gW +260 c +175“C Lead temperature (soldering, 10 seconds) - - - - - - - - - 1.4 Recomended operating conditions. Supply voltage (VDD) - - - - - - - - - - -
7、 - - - - - - - - Case operating temperature range (TC)- - - - - - - - - - - Static or dynamic voltage across the switch- - - - - - - - +3.0 V dc to +15.0 V dc -55C to +125OC 0-0 mV Peak-to-peak vol tage into or out of the switch - - - - - - O-VDD - i/ For TC = +lOOC to +125“C, derate linearly at 12
8、mW/“C to 200 mW. 5962-87753 SIZE A STANDARDIZED MILITARY DRAWING REVISION LEVEL SHEET 2 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A SEP a7 Y - Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DESC-DWG-87753 57 W 7777775 0011237
9、 7 W 2. APPLICABLE DOCUMEYTS 2.1 Government specification and standard. Unless otherwise specified, the following specification and standard, of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawin
10、g to the extent specified herein. SPECIFICATIOW MILITARY MIL-M-38510 - Microcircuits, General Specification for. STAU DARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection with specific acquisit
11、ion functions should be obtained from the contracting activity or as directed by the :ontracting activity. 1 references cited nerein, the text of this drawing shall take precedence. 2.2 Order of precedence. 3. REQUIREMEYTS 3.1 Item requirements. The individual item requirements shall be in accordanc
12、e with 1.2.1 of UL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. In the event of a conflict between the text of this drawing and the 3.2 Design, construction, and physical dimensions. The design, construction, and physical dim
13、ensions shall be as specified in MIL-M-38510 and herein . 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Truth table. The truth table shall be as specified on figure 2. 3.2.3 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.3 E
14、lectrical performance characteristics. Unless otherwise specified, the electrical Derformance characteristics are as specified in table I and apply over the full case operating temperature range. 5962-87753 STANDARDIZED SIZE A MILITARY DRAWING I DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I
15、 REVISION LEVEL I SHEET 3 I I I fi U S. GOVERNMENT PRINTING OFFICE: 1987-549096 ESC FORM 193A SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1 TABLE I. Electrical performance characteristics. Test High level input voltage Low level input volt
16、age “OY“ resistance See footnotes at end of table. Symbol VIH VI L bi i VDD = 15.0 VI I i 4.0 i I I III VIA = o v to VDD (swi tc hl I VDD = 5.0 v I I I I I I I VDD = 10.0 V I i 1 i i1050 i I I I 2 I 11300 I I III 11 I 3 I 18001 I III -1 Ill I 500 I I+I I iii 1-1 n i 2 i 15501 I 131 I i I I 1 I I I I
17、 I III I 11 I I2 I13201 i+/ I I“! I VDD 15.0 VI 1 I i 280 I I I III I I I I I III 131 I 220 I STANDARDIZED MILITARY DRAWING 1 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 A I I 5962-87753 t ISHEET 4 ESC FORbl 193A * US. GOVERNMENT PANlUiG OFFICE: 1987449096 SEP a7 Provided by IHSNot for Resa
18、leNo reproduction or networking permitted without license from IHS-,-,-DESC-DWG-47753 57 9777795 OOLL242 5 = STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 P SIZE 5962-87753 A REVISION LEVEL SHEET 5 - Test TABLE I. Electrical performance characteristics - Continue
19、d. “ON“ resi stance between any two channel s in the same package Control input leakage current Quiescent current per package “OFF“ channel 1 eakage current jee footnotes at end of table. ;ymbol !OH IN ID D IOFF I Conditions IGrup A 1 Limlts i Unit -55C TC I +125“C L/ lsubgroupslv I Min I Max I I -
20、II I I I I I I 12 111351 I III I I TC = +25“C I VDD = 10.0 VI 1, 3 I I 50 I III I TC = -55C TC = +25:C I VDD = 5.0 V I 1, 3 I I 70 I Q TC = -55 C I I III I TC = +125C I I I TC = +125“C I i 2 i i 951 I I III TC = +25“C i vOD = 15.0 vi i, 3 i i 45 i llt I I I TC = -55C I I I I I I I I i i 2 i i 65i I
21、I I. I I I i I III TC = +125“C VIN = VDD or 0.0 V/ VDD = 15.0 VI 1, 2, 3 I I *1 I NA 1*13001 III III i2i VIN = VIL or VIH I I I I I I TC = 125C I Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-i- STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUP
22、PLY CENTER DAYK)N, OHIO 45444 TMLE I. Electrical performance characteristics - Continued. I SIZE A 5962-87753 REVISION LEVEL SHEET I I I I I I I -55C TC i +125C i/ 1subgroupsl.- I I -1 I Min I Max I I I I III l I III Functional tests I I See 4.3.ld 171 I I Test /Symbol I Conditions IGroup A I Limits
23、 I Uni1 Input capacitance /GIN 1 TC = +25“C see 4.3.1 I 4 I I 7.5 I pF I I I I I III I I I itpHL1, i RL = 10 kn I VDD = 5.0 V 19, 10, 111 I I VDD = 5.0 V 19, 10, 111 1 875 I Propagation delay time, switch input to switch ltpLH1 I CL = 50 PF *IO% I I I 140 I output I i/ I I I I I II I I See. figure 3
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD5962877531988MICROCIRCUITDIGITALCMOSANALOGMULTIPLEXERDEMULTIPLEXERFOURPOLEDOUBLETHROWMONOLITHICSILICON

链接地址:http://www.mydoc123.com/p-699148.html