DLA SMD-5962-86716 REV D-2003 MICROCIRCUIT LINEAR CMOS HIGH SPEED QUAD SPST ANALOG SWITCH MONOLITHIC SILICON《硅单块 高速四角形单刀单掷模拟开关 互补金属氧化物半导体直线型微型电路》.pdf

《DLA SMD-5962-86716 REV D-2003 MICROCIRCUIT LINEAR CMOS HIGH SPEED QUAD SPST ANALOG SWITCH MONOLITHIC SILICON《硅单块 高速四角形单刀单掷模拟开关 互补金属氧化物半导体直线型微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-86716 REV D-2003 MICROCIRCUIT LINEAR CMOS HIGH SPEED QUAD SPST ANALOG SWITCH MONOLITHIC SILICON《硅单块 高速四角形单刀单掷模拟开关 互补金属氧化物半导体直线型微型电路》.pdf（15页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add two vendors, CAGE 24355 and CAGE 17856. Add device type 02. Make changes to 1.2.1, 1.3, 1.4, and table I, figure 1, and figure 3. Editorial changes throughout. 89-11-09 M. A. Frye B Remove vendor, CAGE 24355 from device types 01 and 02. Add d

2、evice type 03. Table I changes. Editorial changes throughout. 93-03-02 M. A. Frye C Update boilerplate to add class V. rrp 00-09-07 R. Monnin D Update to current requirements. Editorial changes throughout. - drw 03-05-01 Raymond Monnin REV SHET REV SHET REV STATUS REV D D D D D D D D D D D D D OF SH

3、EETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Rick Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles E. Besore COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCU

4、IT, LINEAR, CMOS, HIGH SPEED QUAD SPST ANALOG SWITCH, MONOLITHIC AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-01-30 SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-86716 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E370-03 DISTRIBUTION STATEMENT A. Approved for public

5、 release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86716 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 S

6、cope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choic

7、e of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 86716 01 E A Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Caseoutline (see 1.2.4) Leadfinish (see 1.

8、2.5) / / Drawing number For device class V: 5962 - 86716 01 V E A Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA

9、marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 De

10、vice types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 HI201HS High speed quad SPST CMOS analog switch 02 DG271 High speed quad SPST CMOS analog switch 03 ADG201HST High speed quad SPST CMOS analog switch 1.2.3 Device class designator. T

11、he device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device

12、. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reprodu

13、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86716 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:

14、Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absol

15、ute maximum ratings. 1/ 2/ Positive supply voltage (V+ to ground): Device type 01 . +18 V Device types 02 and 03 . +25 V Negative supply voltage (V- to ground): Device type 01 . -18 V Device types 02 and 03 . -25 V Digital input voltage (VIN): Device types 01 and 03 . V- (-4 V) to V+ (+4 V) or 20 mA

16、, whichever comes first Device type 02 . V- (-2 V) to V+ (+2 V) or 20 mA, whichever comes first Analog input voltage, one switch (VS) V- (-2 V) to V+ (+2 V) or 20 mA, whichever comes first Maximum power dissipation (PD): Device types 01 and 03 . 750 mW 3/ Device type 02 . 900 mW 4/ Maximum junction

17、temperature (TJ) . +150C Lead temperature (soldering, 10 seconds) +275C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 76C/W Storage temperature range -65C to +150C Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle max): Device typ

18、e 01 . 50 mA Device type 02 . 100 mA Device type 03 . 70 mA Continuous current, any terminal (except S or D): Device type 01 . 25 mA Device types 02 and 03 . 20 mA 1.4 Recommended operating conditions. Positive supply voltage (V+) +15 V dc Negative supply voltage (V-) . -15 V dc Minimum high level i

19、nput voltage (VIH): Device types 01 and 03 . 2.4 V dc Device type 02 . 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc Ambient operating temperature range (TA) -55C to +125C Ground (GND) 0 V dc 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended o

20、peration at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to ground. 3/ Derate case E, 8 mW/C above TA= +75C. Derate case 2, 10 mW/C above TA= +75C. 4/ Derate case E, 12 mW/C above TA= +75C. Derate case 2, 10 mW/C above

21、TA= +75C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86716 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government s

22、pecification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and S

23、tandards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard

24、Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document

25、 Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws a

26、nd regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan.

27、The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical

28、 dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal conn

29、ections. The terminal connections shall be as specified on figure 1. 3.2.3 Functional diagram. The functional diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance char

30、acteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are

31、 defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86716 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performan

32、ce characteristics. Test Symbol Conditions -55C TA+125C V+ = +15 V dc, V- = -15 V dc unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min MaxAnalog signal range VSTA= +25C 2/ 4 All 15 V 1 All 50 ON resistance RDS(ON)VS= 10 V, ID= 1 mA, VIN= 0.8 V 2, 3 75 IS(OFF)1 01 10 nA VS=

33、14 V, VD= 14 V, VIN= 2.4 V 2, 3 100 02, 03 1 02 100 Source OFF leakage current VD= 14 V, VS= 14 V, VIN= 2.4 V 2, 3 03 60 1 01 10 nA VS= 14 V, VD= 14 V, VIN= 2.4 V 2, 3 100 1 02, 03 1 02 100 Drain OFF leakage current ID(OFF)VD= 14 V, VS= 14 V, VIN= 2.4 V 2, 3 03 60 1 10 2, 3 01 100 1 02, 03 1 02 100

34、Channel ON leakage current ID(ON)VD= VS= 14 V, VIN= 0.8 V 2, 3 03 60 nA Low level input voltage 3/ VIL7, 8 All 0.8 V 01, 03 2.4 High level input voltage 3/ VIH7, 8 02 2.0 V VINunder test = 0.8 V, All other VIN= 4.0 V 1, 2, 3 01 500 1 1 VINunder test = 0 V, All other VIN= 2.0 V 2, 3 02 10 Input leaka

35、ge current (low) IILVINunder test = 1.0 V, All other VIN= 16.5 V, VS= 17 V 1, 2, 3 03 1 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86716 DEFENSE SUPPLY CENTER COLUMBUS CO

36、LUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA+125C V+ = +15 V dc, V- = -15 V dc unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min MaxVINunder test = 4.0 V, All

37、 other VIN= 0.8 V 1, 2, 3 01 40 1 1 VINunder test = 2.0 V, All other VIN= 0 V 2, 3 02 10 Input leakage current (high) IIHVINunder test = 16.5 V, All other VIN= 1.0 V, VS= 17 V 1, 2, 3 03 1 A VIN= 2.4 V or VIN= 0.8 V for all switches 1, 2, 3 01 10 1 10 VIN= 0 V or VIN= 2.0 V for all switches 2, 3 02

38、11 Positive supply current I+ VIN= 3.0 V or VIN= 0.8 V for all switches 1, 2, 3 03 10 mA VIN= 2.4 V or VIN= 0.8 V for all switches 1, 2, 3 01 -6 1 -6 VIN= 0 V or VIN= 2.0 V for all switches 2, 3 02 -10 Negative supply current I- VIN= 2.4 V or VIN= 0.8 V for all switches 1, 2, 3 03 -6 mA 9 50 RL= 1 k

39、, CL= 35 pF, VS= 10 V, VIH= +3 V, VIL= 0 V, See figure 3 10, 11 01 100 9 65 RL= 1 k, CL= 35 pF, VS= 10 V, VIH= +5 V, VIL= 0 V, See figure 3 10, 11 02 80 Switch on time tONRL= 1 k, CL= 35 pF, VS= 10 V, VIH= +3 V, VIL= 0 V, See figure 3 9, 10, 11 03 50 ns 9 50 RL= 1 k, CL= 35 pF, VS= 10 V, VIH= +3 V,

40、VIL= 0 V, See figure 3 10, 11 01 100 9 65 RL= 1 k, CL= 35 pF, VS= 10 V, VIH= +5 V, VIL= 0 V, See figure 3 10, 11 02 80 Switch off time tOFFRL= 1 k, CL= 35 pF, VS= 10 V, VIH= +3 V, VIL= 0 V, See figure 3 9, 10, 11 03 50 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or

41、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86716 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA+125C V+

42、 = +15 V dc, V- = -15 V dc unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min MaxCapacitance address CAGND = 0 V, VIL= 0 V, f = 1 MHz, TA= +25C 4/ 4 All 15 pF Capacitance input switch CISGND = 0 V, VIH= 5 V, f = 1 MHz, TA= +25C 4/ 4 All 15 pF Capacitance output switch COSGND

43、 = 0 V, VIH= 5 V, f = 1 MHz, TA= +25C 4/ 4 All 20 pF Off isolation VISOVGEN= 1 VP-P, f = 100 kHz, TA= +25C 2/ 4 All 60 dB Crosstalk between channels VCTVGEN= 1 VP-P, f = 100 kHz, TA= +25C 2/ 4 All 60 dB Charge transfer error VCTETA= +25C 2/ 4 All 10 mV 1/ The limiting terms “min” (minimum) and “max”

44、 (maximum) shall be considered to apply to magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 2/ These parameters may not be tested, but shall be guaranteed to the limits specified in table I herein. 3/ Test not required if applied as a forcing

45、function. 4/ Subgroup 4 (CA, CIS, and COSmeasurements) shall be measured only for the initial test and after process or design changes which may affect capacitance. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as liste

46、d in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and

47、 V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device

48、class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC