DLA MIL-PRF-19500 741 A-2009 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE N-CHANNEL AND P-CHANNEL SILICON VARIOUS TYPES.pdf
《DLA MIL-PRF-19500 741 A-2009 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE N-CHANNEL AND P-CHANNEL SILICON VARIOUS TYPES.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 741 A-2009 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE N-CHANNEL AND P-CHANNEL SILICON VARIOUS TYPES.pdf(16页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/741A 30 January 2009 SUPERSEDING MIL-PRF-19500/741 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC This specifica
2、tion is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel and
3、 P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor die. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 through 8 herein. 1.3 Maximum ratings. Se
4、e the applicable performance specification sheet from table I herein. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recomme
5、nded for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. AMSC
6、N/A FSC 5961 METRIC Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency
7、of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 April 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen
8、se from IHS-,-,-MIL-PRF-19500/741A 2 2N7467, 2N7478, 2N7468, 2N7470 Dimensions Ltr. Micrometers Mils Tolerance A 8634.0 339.9 B 6602.0 259.9 200 m (7.87 mils) Die bond pad coordinates Micrometers Mils Key X Y X Y Tolerance 1 0 0 0 0 2 541.00 0 21.299 0 3 0 538.30 0 21.193 4 541.0 538.30 21.299 21.19
9、3 5 -424.1 2005.1 -16.7 78.941 6 969.0 2005.1 38.15 78.941 7 -424.1 3397.5 -16.7 133.76 8 969.0 3397.5 38.15 133.76 9 -424.1 4814.1 -16.7 189.53 10 965.1 4814.1 37.996 189.53 11 -424.1 6033.1 -16.7 237.52 12 965.1 6033.1 37.996 237.52 5 m (0.2 mils) NOTES: 1. Dimensions are in micrometers. Mils are
10、given for general information only. 2. Top metal: Aluminum, 8 m (0.31 mils) thick. 3. Back metal: Titanium, nickel, silver, 0.1, 0.2, 0.25 m thick, respectively. 4. All dimensions are valid for all radiation hardness levels specified. 5. Backside metal is the drain connection. 6. Die thickness: 330
11、m (13 mils). 7. For sawn die, outline dimensions (A and B) will be reduced by 25 m (0.98 mils), due to saw kerf. 8. Die bond pad coordinates are provided for use in automated bonding equipment. Key locations 1 through 12 refer to adjacent gate(G)/source(S) pad corners. Key 2 through 12 are relative
12、to Key 1. 9. See 6.5 for ordering information. FIGURE 1. JANHC and JANKC A-version die dimensions, 2N7467, 2N7478, 2N7468, and 2N7470. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/741A 3 2N7469, 2N7471, 2N7472, 2N7475, 2N7473, 2N7476
13、, 2N7474, 2N7477, 2N7549, 2N7550 Dimensions Micrometers Mils Ltr. Min Max Min Max ToleranceA 9144.0 360.0 B 6602.0 259.9 200 m (7.87 mils)Die bond pad coordinates Micrometers Mils Key X Y X Y Tolerance1 0 0 0 0 2 541.0 0 21.299 0 3 0 538.3 0 21.193 4 541.0 538.3 21.299 21.193 5 -424.1 2199.6 -16.7 8
14、6.598 6 969.0 2199.6 38.150 86.598 7 -424.1 3592.0 -16.7 141.42 8 969.0 3592.0 38.150 141.42 9 -424.1 5013.9 -16.7 197.40 10 965.1 5013.9 37.996 197.40 11 -424.1 6232.9 -16.7 245.39 12 965.1 6232.9 37.996 245.39 5 m (0.2 mils) NOTES: 1. Dimensions are in micrometers. Mils are given for general infor
15、mation only. 2. Top metal: Aluminum, 8 m (0.31 mils) thick. 3. Back metal: Titanium, nickel, silver, 0.1, 0.2, 0.25 m thick, respectively. 4. All dimensions are valid for all radiation hardness levels specified. 5. Backside metal is the drain connection. 6. Die thickness: 330 m (13 mils). 7. For saw
16、n die, outline dimensions (A and B) will be reduced by 25 m (0.98 mils), due to saw kerf. 8. Die bond pad coordinates are provided for use in automated bonding equipment. Key locations 1 through 12 refer to adjacent gate (G)/source (S) pad corners. Key 2 through 12 are relative to Key 1. 9. See 6.5
17、for ordering information. FIGURE 2. JANHC and JANKC A-version die dimensions, 2N7469, 2N7471, 2N7472, 2N7475, 2N7473, 2N7476, 2N7474, 2N7477, 2N7549, 2N7550. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/741A 4 2N7479, 2N7482, 2N7491,
18、 2N7494, 2N7480, 2N7483, 2N7492, 2N7495 Dimensions Ltr. Micrometers Mils ToleranceA 4604.3 181.3 B 2946.4 116.0 200 m (7.87 mils)Die bond pad coordinates Micrometers Mils Key X Y X Y Tolerance1 0 0 0 0 2 685.9 0 27.004 0 3 0 509.9 0 20.075 4 685.9 509.9 27.004 20.075 5 -206.1 3474.3 -8.114 136.78 6
19、871.9 3474.3 34.327 136.78 7 -206.1 4235.4 -8.114 166.75 8 871.9 4235.4 34.327 166.75 5 m (0.2 mils) NOTES: 1. Dimensions are in micrometers. Mils are given for general information only. 2. Top metal: Aluminum, 8 m (0.31 mils) thick. 3. Back metal: Titanium, nickel, silver, 0.1, 0.2, 0.25 m thick, r
20、espectively. 4. All dimensions are valid for all radiation hardness levels specified. 5. Backside metal is the drain connection. 6. Die thickness: 330 m (13 mils). 7. For sawn die, outline dimensions (A and B) will be reduced by 25 m (0.98 mils), due to saw kerf. 8. Die bond pad coordinates are prov
21、ided for use in automated bonding equipment. Key locations 1 through 8 refer to adjacent gate/source pad corners. Key 2 through 8 are relative to Key 1. 9. See 6.5 for ordering information. FIGURE 3. JANHC and JANKC A-version die dimensions, 2N7479, 2N7482, 2N7491, 2N7494, 2N7480, 2N7483, 2N7492, 2N
22、7495. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/741A 5 2N7481, 2N7484, 2N7493, 2N7496, 2N7545, 2N7547 Dimensions Ltr Micrometers Mils ToleranceA 4604.3 181.3 B 2946.4 116.0 200 m (7.87 mils)Die bond pad coordinates Micrometers Mil
23、s Key X Y X Y Tolerance1 0 0 0 0 2 685.9 0 27.004 0 3 0 509.9 0 20.075 4 685.9 509.9 27.004 20.075 5 -206.1 3398.5 -8.114 133.8 6 871.9 3398.5 34.327 133.8 7 -206.1 4155.6 -8.114 163.61 8 871.9 4155.6 34.327 163.61 5 m (0.2 mils) NOTES: 1. Dimensions are in micrometers. Mils are given for general in
24、formation only. 2. Top metal: Aluminum, 8 m (0.31 mils) thick. 3. Back metal: Titanium, nickel, silver, 0.1, 0.2, 0.25 m thick, respectively. 4. All dimensions are valid for all radiation hardness levels specified. 5. Backside metal is the drain connection. 6. Die thickness: 330 m (13 mils). 7. For
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLAMILPRF19500741A2009SEMICONDUCTORDEVICEFIELDEFFECTRADIATIONHARDENEDTOTALDOSEANDSINGLEEVENTEFFECTSTRANSISTORDIENCHANNELANDPCHANNELSILICONVARIOUSTYPESPDF

链接地址:http://www.mydoc123.com/p-692517.html