DLA MIL-PRF-19500 366 P-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON AMPLIFIER TYPES 2N3498 2N3498L 2N3498U4 2N3499 2N3499L 2N3499U4 2N3500 2N3500L 2N3500U4 2N3501 2N3501L 2N35D.pdf
《DLA MIL-PRF-19500 366 P-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON AMPLIFIER TYPES 2N3498 2N3498L 2N3498U4 2N3499 2N3499L 2N3499U4 2N3500 2N3500L 2N3500U4 2N3501 2N3501L 2N35D.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 366 P-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON AMPLIFIER TYPES 2N3498 2N3498L 2N3498U4 2N3499 2N3499L 2N3499U4 2N3500 2N3500L 2N3500U4 2N3501 2N3501L 2N35D.pdf(36页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/366P October 23, 2012 SUPERSEDING MIL-PRF-19500/366N 5 August 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, 2N3500U4, 2N3501, 2N3501L, 2N3501UB, AND 2N3501U4,
2、 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCC, JANKCB, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, AND, JANKCCH This specification is approved for use by all Departments and Agencies of the Department of
3、 Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power amplifier and switching transistors. Four levels of product assu
4、rance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance (RHA) level designators; “M”, “D”, “P”, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA re
5、quirements. 1.2 Physical dimensions. See figure 1 (similar to TO-5, TO-39), figure 2 (surface mount, 2N3501UB), figure 3 (U4), and figures 4 and 5 (die). 1.3 Maximum ratings. Unless otherwise specified TA= +25C. Types PTTA= +25C (1) PTTC= +25C (1) PTTSP= +25C (1) RJARJCRJSPVCBOVCEOVEBOICTJand TSTG2N
6、3498, L 2N3498U4 2N3499, L 2N3499U4 2N3500, L 2N3500U4 2N3501, L 2N3501U4 2N3501UB W 1 1 1 1 1 1 1 1 .5 W 5 4 5 4 5 4 5 4 N/A W N/A N/A N/A N/A N/A N/A N/A N/A 1.5 C /W 175 175 175 175 175 175 175 175 325 C /W 30 15 30 15 30 15 30 15 N/A C /W N/A N/A N/A N/A N/A N/A N/A N/A 90 V dc 100 100 100 100 1
7、50 150 150 150 150 V dc 100 100 100 100 150 150 150 150 150 V dc 6 6 6 6 6 6 6 6 6 mA dc 500 500 500 500 300 300 300 300 300 C -65 to +200 (1) See derating curve figures 6, 7, 8, 9, and 10. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA
8、 Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . Device types 2N3498, 2N3499, 2N
9、3500 and their corresponding L suffix versions are inactive for new design after 14 April 1995. The documentation and process conversion measures necessary to comply with this document shall be completed by 23 January 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without
10、 license from IHS-,-,-MIL-PRF-19500/366P 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Type hFEat VCE= 10 V dc |hfe| VCE= 20 V dc CoboVCB= 10 V dc hFE1(1) IC= 0.1 mA dc hFE4(1) IC= 150 mA dc hFE5(1) IC= 300 mA dc hFE6(1) IC= 500 mA dc IC= 20 mA dc f = 100 MHz IE= 0
11、100 kHz f 1 MHz 2N3498, L 2N3498U4 2N3499, L 2N3499U4 2N3500, L 2N3500U4 2N3501, L 2N3501U4 2N3501UB Min Max 20 20 35 35 20 20 35 35 35 Min Max 40 120 40 120 100 300 100 300 40 120 40 120 100 300 100 300 100 300 Min Max 15 15 20 20 20 Min Max 15 15 20 20 Min Max 1.5 8.0 1.5 8.0 1.5 8.0 1.5 8.0 1.5 8
12、.0 1.5 8.0 1.5 8.0 1.5 8.0 1.5 8.0 pF pF Min Max 10 10 10 10 8 8 8 8 8 (1) Pulsed (see 4.5.1). VCE(sat)(1) VBE(sat)(1) tontoffTypes (1) IC= 10 mA dc IB= 1 mA dc IC= 300 mA dc IB= 30 mA dc IC= 10 mA dc IB= 1 mA dc IC= 300 mA dc IB= 30 mA dc IC= 150 mA dc IB1= 15 mA dc VEB= 5 V dc IC= 150 mA dc IB1= -
13、IB2= 15 mA dc 2N3498 2N3498U4 2N3499 2N3499U4 2N3500 2N3500U4 2N3501 2N3501U4 2N3501UB Min Max V dc V dc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Min Max V dc V dc 0.6 0.6 0.6 0.6 Min Max V dc V dc 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 Min Max V dc V dc 1.4 1.4 1.4 1.4 Max ns 115 115 115 115 115 115 115 11
14、5 115 Max ns 1,150 1,150 1,150 1,150 1,150 1,150 1,150 1,150 1,150 (1) Pulsed (see 4.5.1). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only.
15、 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seat
16、ing plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD applies between L1and L2. Dimension LD applies between L2and LL minimum. Lead diameter shall not exceed .042 inch (1.07 mm) within L1and beyo
17、nd LL minimum. 8. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector. 9. Lead number three is electrically connected to case. 10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 11. Symbol r applied to both inside corners of tab. 12. For trans
18、istor types 2N3498, 2N3499, 2N3500, and 2N3501, LL = .50 inch (12.7 mm) minimum and .750 inch (19.1 mm) maximum. For transistor types 2N3498L, 2N3499L, 2N3500L, and 2N3501L, LL = 1.50 inches (38.1 mm) minimum and 1.750 inches (44.5 mm) maximum. 13. All three leads. 14. In accordance with ASME Y14.5M
19、, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-5, TO-39). Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7 LL See notes 7, 12, and 13
20、LU .016 .019 0.41 0.48 7, 13 L1.050 1.27 13 L2.250 6.35 13 TL .029 .045 0.74 1.14 3 TW .028 .034 0.71 0.86 10, 11 P .100 2.54 5 Q .050 1.27 4 r .010 .25 11 45 TP 45 TP 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 4 Symbol Dime
21、nsions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1.036 .040 0.91 1.02 BL .115 .128 2.92 3.25 LS2.071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 .203 CW .108 2.74 r1 .012 .305 LL1 .0
22、22 .038 0.56 0.97 r2 .022 .559 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connec
23、ted to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (2N3501UB version). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 5 Symbol Dimensions Inc
24、hes Millimeters Min Max Min Max BL .215 .225 5.46 5.72 BW .145 .155 3.68 3.94 CH .049 .075 1.24 1.91 LH .020 0.51 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1.19 1.45 LL1 .085 .125 2.16 3.18 LL2 .045 .075 1.14 1.91 LS1 .070 .095 1.78 2.41 LS2 .035 .048 0.89 1.22 Q1 .030 .070 0.76 1.78 Q2 .020 .035 0.51 0
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