DLA MIL-PRF-19500 366 P-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON AMPLIFIER TYPES 2N3498 2N3498L 2N3498U4 2N3499 2N3499L 2N3499U4 2N3500 2N3500L 2N3500U4 2N3501 2N3501L 2N35D.pdf

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1、 MIL-PRF-19500/366P October 23, 2012 SUPERSEDING MIL-PRF-19500/366N 5 August 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, 2N3500U4, 2N3501, 2N3501L, 2N3501UB, AND 2N3501U4,

2、 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCC, JANKCB, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, AND, JANKCCH This specification is approved for use by all Departments and Agencies of the Department of

3、 Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power amplifier and switching transistors. Four levels of product assu

4、rance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance (RHA) level designators; “M”, “D”, “P”, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA re

5、quirements. 1.2 Physical dimensions. See figure 1 (similar to TO-5, TO-39), figure 2 (surface mount, 2N3501UB), figure 3 (U4), and figures 4 and 5 (die). 1.3 Maximum ratings. Unless otherwise specified TA= +25C. Types PTTA= +25C (1) PTTC= +25C (1) PTTSP= +25C (1) RJARJCRJSPVCBOVCEOVEBOICTJand TSTG2N

6、3498, L 2N3498U4 2N3499, L 2N3499U4 2N3500, L 2N3500U4 2N3501, L 2N3501U4 2N3501UB W 1 1 1 1 1 1 1 1 .5 W 5 4 5 4 5 4 5 4 N/A W N/A N/A N/A N/A N/A N/A N/A N/A 1.5 C /W 175 175 175 175 175 175 175 175 325 C /W 30 15 30 15 30 15 30 15 N/A C /W N/A N/A N/A N/A N/A N/A N/A N/A 90 V dc 100 100 100 100 1

7、50 150 150 150 150 V dc 100 100 100 100 150 150 150 150 150 V dc 6 6 6 6 6 6 6 6 6 mA dc 500 500 500 500 300 300 300 300 300 C -65 to +200 (1) See derating curve figures 6, 7, 8, 9, and 10. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA

8、 Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . Device types 2N3498, 2N3499, 2N

9、3500 and their corresponding L suffix versions are inactive for new design after 14 April 1995. The documentation and process conversion measures necessary to comply with this document shall be completed by 23 January 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without

10、 license from IHS-,-,-MIL-PRF-19500/366P 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Type hFEat VCE= 10 V dc |hfe| VCE= 20 V dc CoboVCB= 10 V dc hFE1(1) IC= 0.1 mA dc hFE4(1) IC= 150 mA dc hFE5(1) IC= 300 mA dc hFE6(1) IC= 500 mA dc IC= 20 mA dc f = 100 MHz IE= 0

11、100 kHz f 1 MHz 2N3498, L 2N3498U4 2N3499, L 2N3499U4 2N3500, L 2N3500U4 2N3501, L 2N3501U4 2N3501UB Min Max 20 20 35 35 20 20 35 35 35 Min Max 40 120 40 120 100 300 100 300 40 120 40 120 100 300 100 300 100 300 Min Max 15 15 20 20 20 Min Max 15 15 20 20 Min Max 1.5 8.0 1.5 8.0 1.5 8.0 1.5 8.0 1.5 8

12、.0 1.5 8.0 1.5 8.0 1.5 8.0 1.5 8.0 pF pF Min Max 10 10 10 10 8 8 8 8 8 (1) Pulsed (see 4.5.1). VCE(sat)(1) VBE(sat)(1) tontoffTypes (1) IC= 10 mA dc IB= 1 mA dc IC= 300 mA dc IB= 30 mA dc IC= 10 mA dc IB= 1 mA dc IC= 300 mA dc IB= 30 mA dc IC= 150 mA dc IB1= 15 mA dc VEB= 5 V dc IC= 150 mA dc IB1= -

13、IB2= 15 mA dc 2N3498 2N3498U4 2N3499 2N3499U4 2N3500 2N3500U4 2N3501 2N3501U4 2N3501UB Min Max V dc V dc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Min Max V dc V dc 0.6 0.6 0.6 0.6 Min Max V dc V dc 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 Min Max V dc V dc 1.4 1.4 1.4 1.4 Max ns 115 115 115 115 115 115 115 11

14、5 115 Max ns 1,150 1,150 1,150 1,150 1,150 1,150 1,150 1,150 1,150 (1) Pulsed (see 4.5.1). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only.

15、 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seat

16、ing plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD applies between L1and L2. Dimension LD applies between L2and LL minimum. Lead diameter shall not exceed .042 inch (1.07 mm) within L1and beyo

17、nd LL minimum. 8. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector. 9. Lead number three is electrically connected to case. 10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 11. Symbol r applied to both inside corners of tab. 12. For trans

18、istor types 2N3498, 2N3499, 2N3500, and 2N3501, LL = .50 inch (12.7 mm) minimum and .750 inch (19.1 mm) maximum. For transistor types 2N3498L, 2N3499L, 2N3500L, and 2N3501L, LL = 1.50 inches (38.1 mm) minimum and 1.750 inches (44.5 mm) maximum. 13. All three leads. 14. In accordance with ASME Y14.5M

19、, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-5, TO-39). Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7 LL See notes 7, 12, and 13

20、LU .016 .019 0.41 0.48 7, 13 L1.050 1.27 13 L2.250 6.35 13 TL .029 .045 0.74 1.14 3 TW .028 .034 0.71 0.86 10, 11 P .100 2.54 5 Q .050 1.27 4 r .010 .25 11 45 TP 45 TP 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 4 Symbol Dime

21、nsions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1.036 .040 0.91 1.02 BL .115 .128 2.92 3.25 LS2.071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 .203 CW .108 2.74 r1 .012 .305 LL1 .0

22、22 .038 0.56 0.97 r2 .022 .559 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connec

23、ted to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (2N3501UB version). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 5 Symbol Dimensions Inc

24、hes Millimeters Min Max Min Max BL .215 .225 5.46 5.72 BW .145 .155 3.68 3.94 CH .049 .075 1.24 1.91 LH .020 0.51 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1.19 1.45 LL1 .085 .125 2.16 3.18 LL2 .045 .075 1.14 1.91 LS1 .070 .095 1.78 2.41 LS2 .035 .048 0.89 1.22 Q1 .030 .070 0.76 1.78 Q2 .020 .035 0.51 0

25、.89 1 Collector 2 Base 3 Emitter NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 1 is collector. 4. Terminal 2 is base. 5. Terminal 3 is emitter. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dime

26、nsions and configuration U4. 1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 6 1. Chip size .024 x .026 inch .002 inch (0.609 x 0.660 mm 0.051 mm). 2. Chip thickness . .010 .0015 inch (0.254 x 0.038 mm). 3. Top metal . Aluminum 1

27、5,000 n minimum, 18,000 nominal. 4. Back metal . Gold 3,500 minimum, 5,000 nominal. 5. Backside Collector. 6. Bonding pad . B = .004 x .006 inch (0.102 x 0.152 mm). E = .004 x .0055 inch (0.102 x 0.140 mm). FIGURE 4. Physical dimensions, JANHCC and JANKCC die. Provided by IHSNot for ResaleNo reprodu

28、ction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 7 BEB - Version 1. Die size .030 (0.76 mm) x .030 inch (0.76 mm). 2. Die thickness .008 (.20 mm) .0016 inch (0.04 mm). 3. Base pad .005 inch (0.13 mm) diameter. 4. Emitter pad .005 inch (0.13 mm) diameter. 5. Back metal Go

29、ld, 6,500 1,950 . 6. Top metal Aluminum, 22,500 2,500 . 7. Back side Collector. 8. Glassivation SiO2, 7,500 1,500 . FIGURE 5. Physical dimensions, JANHCB and JANKCB die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 8 2. APPLICAB

30、LE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made

31、to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The followin

32、g specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Speci

33、fication for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadel

34、phia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and

35、 regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufact

36、urer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. PCB P

37、rinted circuit board. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. RJSPThermal resistance junction to solder pads. TRB Technical review board. TSPTemperature of solder pads. UB Surface mount case outlines (see figure 2). 3.4 Interface and physical dimensions. In

38、terface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (similar to TO-5, TO-39), figure 2 (surface mount, 2N3501UB), figure 3 (U4), and figures 4 and 5 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein

39、. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 9 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance require

40、ments, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test req

41、uirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance

42、. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordan

43、ce with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification

44、 was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provid

45、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/366P 10 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made

46、in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance method 3131 of MIL-STD-750, see figures 11, 12, 13, and 14, and 4.3.3. Thermal

47、 impedance method 3131 of MIL-STD-750, see figures 11, 12, 13, and 14, and 4.3.3. 9 ICBO2and hFE4Not applicable. 11 ICBO2and hFE4; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE4= 15 percent of initial value. ICBO2and hFE412 See 4.3.2. See 4.3.2. 13 Subgroups 2 and 3 of ta

48、ble I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE4= 15 percent of initial value. Subgroups 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE4= 15 percent of initial value. * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accorda