DLA MIL-PRF-19500 295 F-2012 SEMICONDUCTOR DEVICE FIELD-EFFECT TRANSISTORS P-CHANNEL SILICON TYPE 2N2608 JAN AND UB.pdf

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1、 MIL-PRF-19500/295F 15 February 2012 SUPERSEDING MIL-PRF-19500/295E 1 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB Inactive for new design for the 2N2608 device after 19 September 2001. This specification is ap

2、proved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for P-channel, junction, si

3、licon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-18) and figure 2 (surface mount, UB). 1.3 Maximum ratings. Types PT(1) TA= +25C VGSS TSTGand TJ 2N2608, 2N2608UB mW 300

4、V dc 30 C -65 to +200 (1) Derate linearly, 1.71 mW/C for TA= +25C. 1.4 Primary electrical characteristics at TA= +25C. Limit IDSSVDS= -5 V dc VGS= 0 VGS(off) VDS= -5 V dc ID= -1.0 A dc CISS VDS= 3 V dc VGS= 0 V dc f = 1 MHz YFS VDS= -5 V dc VGS= 0 V dc f = 1 kHz IGSS VGS= 15 V dc VDS= 0 V dc Minimum

5、 Maximum mA dc -1.0 -5.0 V dc 0.75 6.00 pF 10 mho 1,000 4,500 nA dc 7.5 AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since conta

6、ct information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 May 2012. Provided by IHSNot f

7、or ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/295F 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of

8、this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether

9、or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solic

10、itation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearc

11、h/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the referenc

12、es cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modifi

13、ed herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbol

14、s, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (similar to TO-18) and figure 2 (surface mount, UB). 3.4.1

15、Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical

16、 performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package sha

17、ll consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The JAN prefix can be abbreviated as J. The “2N“ prefix and the “AUB“ suffix can also be omitted. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

18、shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/295F 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210

19、 4.32 5.33 HD .209 .230 5.31 5.84 h .020 0.51 LD .016 .021 0.41 0.53 2, 7 LL .500 .750 12.70 19.05 7 LU .016 .019 0.41 0.48 3,7 M .0707 Nom 1.80 Nom 4 N .0354 Nom 0.90 Nom 4 TL .028 .048 0.71 1.22 6 TW .036 .046 0.91 1.17 NOTES: 1. Dimensions are in inches. Millimeters are given for general informat

20、ion only. 2. Measured in the zone beyond .250 (6.35 mm) from the seating plane. 3. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. 4. When measured in a gauging plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below the seating plane of the transistor, maximum diameter l

21、eads shall be within .007 (0.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 5. The gate shall be electrically connected to the case. 6. Measured from the maximum diameter of the actual device

22、. 7. All three leads. (see 3.4.1) 8. Diameter of leads in this zone is not controlled. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions, 2N2608. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

23、MIL-PRF-19500/295F 4 Symbol Dimensions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .040 0.89 1.02 BL .115 .128 2.92 3.25 LS2 .071 .079 1.81 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.2

24、0 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.96 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Drain, Pad 2 = Source, Pad 3 = G

25、ate, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount, 2N2608UB. CERAMIC Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/2

26、95F 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Conformance inspection (see 4.3 and table I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in acc

27、ordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests,

28、 the tests specified in table III herein shall be performed by the first inspection lot of this revision to maintain qualification. 4.3 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3.1 Group A inspection. Group A inspection shall

29、 be conducted in accordance with MIL-PRF-19500, and table I herein. * 4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) requiremen

30、ts shall be in accordance with the applicable steps of table II herein. Subgroup Method Condition * B3 1027 VCB 10 V dc, TA= +150C, VDS= 0; VGS= 24 V dc. * B3 2037 Bond strength, condition D. B5 Not applicable. B6 1032 TSTG= +200C. 4.3.3 Group C inspection. Group C inspection shall be conducted in a

31、ccordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) requirements shall be in accordance with the applicable steps of table II herein. Subgroup Method Condition C2 2036 Test condition A. C6 1026 Steady-state operation life

32、 (accelerated): TA= +150C, VDS= 0; VGS= 24 V dc. 4.3.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in acco

33、rdance with the applicable steps of table II herein. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for R

34、esaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/295F 6 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Gate - source breakdown voltage 3401 Bias c

35、ondition C;IG= 1.0 A dc; VDS= 0. V(BR)GSS30 V dc Gate reverse current 3411 Bias condition C; V = 30 VGSdc; VDS= 0. IGSS110 nA dc Gate reverse current 3411 Bias condition C; V = 15 VGSdc; VDS= 0. IGSS27.5 nA Zero-gate-voltage drain current 3413 Bias condition C; VDS= 5 V dc; VGS= 0; pulsed. IDSS1-1.0

36、 -5.0 mA dc Gate to source cutoff voltage 3403 ID= 1 A dc; VDS= 5 V dc VGS(off) 0.75 6.0 V dc Subgroup 3 High-temperature operation: TA= +150C Drain current 3413 Bias condition C, VGS= 0 V dc; VDS= 5 IDSS2 -0.56 mA dc Gate reverse current 3411 Bias condition C; VGS= 15 V dc; VDS= 0. IGSS315 A dc Low

37、-temperature operation: TA= -55C Small-signal, common- source, short-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS= 0; f = 1 kHz. Yfs1 4,500 mho Subgroup 4 Small-signal common- source, short-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS= 0; f = 1 kHz. Yfs2 1,000 4,500 mho S

38、mall-signal common-source, short-circuit, input capacitance 3431 VDS= 5 V dc; VGS= 0; f = 1 MHz. Ciss10 pF Common-source spot noise figure VDS= 5 V dc; VGS= 0; BW= 16 percent; RG= 1 Mohm; egen= 1.82 mV; RL= 470 ohms; f = 1 kHz; (see figure 3). NF 3 dB Subgroups 5, 6, and 7 Not applicable 1/ For samp

39、ling plan, see MIL-PRF-19500. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/295F 7 TABLE II. Groups B, C, and E electrical measurements. 1/ 2/ 3/ Step Inspection MIL-STD-750 Symbol Limit Unit Method Conditions Min Max 1 Gate reverse

40、 current 3411 Bias condition C; VGS= 15 V dc; VDS= 0 IGSS18 nA dc 2 Gate reverse current 3411 Bias condition C; VGS= 15 V dc; VDS= 0 IGSS215 nA dc 3 Drain current 3413 Bias condition C; VGS= 5 V dc; VDS= 0 IDSS1-1.0 -5.0 mA dc 4 Drain current 3413 Bias condition C; VGS= 5 V dc; VDS= 0 IDSS2-0.90 -5.

41、5 mA dc 5 Small-signal, common-source short-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS= 0; f = 1 kHz Yfs1 1,000 4,500 mho 6 Small-signal, common-source short-circuit, forward transfer admittance 3455 VDS= 5 V dc; VGS= 0; f = 1 kHz Yfs3 900 4,950 mho 1/ The electrical measurements for

42、 table E-VIB (JAN) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 3, and 5. b. Subgroups 3 and 6, see table II herein, steps 2, 4, and 6. 2/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1,

43、 3, and 5. b. Subgroup 6, see table II herein, steps 2, 4, and 6. 3/ The electrical measurements for table E-IX of MIL-PRF-19500 are: Subgroups 1 and 2, see table II herein, all steps. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/295

44、F 8 * TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only. Inspection MIL-STD-750 Qualification and Method Conditions large lot quality conformance inspection Subgroup 1 45 devices c = 0 Temperature cycling 1051 -55C to +150C, 500 cycles Hermetic seal Fine l

45、eak Gross leak 1071 Electrical measurements See table II, all steps Subgroup 2 1/ 45 devices c = 0 Steady-state operating life 1026 VCB 10 V dc, TA= +150C, VDS= 0; VGS= 24 V dc. Electrical measurements See table II, all steps Subgroups 4 and 5 Not applicable Subgroup 8 45 devices c = 0 Reverse stabi

46、lity 1033 Condition A 1/ A separate sample for each test shall be pulled. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/295F 9 NOTE: Or equivalents Procedure: The voltage and current shall be applied to the terminals, and the noise fi

47、gure shall then be measured as follows: 1. Connect egen to the input of the device under test. 2. Adjust gain of system to give 0 dB reading on a convenient scale of the Ballantine voltmeter or equivalent. 3. Switch the device input to ground. 4. Increase system gain by 60 dB. 5. Read noise figure d

48、irectly in dBs on Ballintine scale or equivalent. FIGURE 3. Common-source spot noise figure test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/295F 10 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging require