DLA MIL-PRF-19500 241 N-2013 SEMICONDUCTOR DEVICE DIODE SILICON LOW LEAKAGE CONTROLLED FORWARD VOLTAGE TYPES 1N3595-1 1N3595UB 1N3595UBCA 1N3595UBD 1N3595UBCC 1N3595UB2 1N3595UB2R 9.pdf

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1、INCH-POUND MIL-PRF-19500/241N 14 November 2013 SUPERSEDING MIL-PRF-19500/241M 25 January 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2, 1N3595UB2R, 1N3595US,

2、 1N3595UR-1, 1N3595A-1, 1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet an

3、d MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Phys

4、ical dimensions. See figure 1 (DO-35), figure 2 (UR), figure 3 (US), figure 4 (UB), figure 5 (UB2), figure 6 (die), and figure 7 (die). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. VRWMIO (1) (2) IFSMtp= 1 s IFSMtp= 1 s RJLL = .375 inch (9.53 mm) RJECL = 0 RJA(PCB)TJand TSTGV(pk) mA dc

5、 mA (pk) A (pk) C/W C/W C/W C 125 150 500 4 250 UR 100 275 -65 to +175 UB, UB2 100 US 40 (1) For temperature-current derating curves, see figure 8. (2) TA= +75C for both axial and metal electrode leadless face diodes (MELF) (UR, US) on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-

6、layer 1-Oz Cu, horizontal, in still air; pads for (UR, US) = .061 inch (1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resistance condition included,

7、is measured at IO= 150 mA dc. AMSC N/A FSC 5961 * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil. Since contact information can change, you ma

8、y want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 January 2014. Provided by IHSNot for ResaleNo reproduction or network

9、ing permitted without license from IHS-,-,-MIL-PRF-19500/241N 2 1.4 Primary electrical characteristics at TA= +25C, unless otherwise indicated and apply to all parts. Limits VF1IF= 200 mA dc VF2IF= 100 mA dc VF3IF= 50 mA dc VF4IF= 10 mA dc VF5IF= 5 mA dc VF6 IF= 1 mA dc Min Max .83 V dc 1.00 V dc .7

10、9 V dc .92 V dc .74 V dc .88 V dc .65 V dc .80 V dc .60 V dc .765 V dc .52 V dc .70 V dc Types IR1VR= 125 V dc IR2VR= 125 V dc TA= +150C C VR= 0 V dc f = 1 MHz trrIF= 10 mA dc VR= 35 V dc Max Max Max Max 1N3595-1 1.0 nA dc 3 A dc 8.0 pF 3 s 1N3595A-1 2.0 nA dc 3 A dc 8.0 pF 3 s 2. APPLICABLE DOCUMEN

11、TS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure

12、the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specific

13、ations, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification f

14、or. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5

15、094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unl

16、ess a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized

17、by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 3 Ltr Dimensions Inches Millimeters Min Max Min Ma

18、x BD .056 .075 1.42 1.91 BL .140 .180 3.56 4.57 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions - 1N3

19、595-1, 1N3595A-1 (DO-35). DO-35 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 4 Symbol Dimensions Inches Millimeters Min Max Min Max BD .063 .067 1.60 1.70 BL .130 .146 3.30 3.70 ECT .016 .022 0.41 0.55 S .001 min 0.03 min NOTES:

20、 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. F

21、IGURE 2. Physical dimensions 1N3595UR-1, 1N3595AUR-1 (DO-213AA). UR DO-213AA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 5 Ltr Dimensions Inches Millimeters Min Max Min Max BD .070 .085 1.78 2.16 BL .165 .195 4.19 4.95 ECT .019

22、 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are presolder dip. 4. Referencing dimension S, minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters ar

23、e equivalent to x symbology. FIGURE 3. Physical dimensions - 1N3595US, 1N3595AUS. US Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 6 Symbol Dimensions Symbol Dimensions Inches Millimeters Inches Millimeters Min Max Min Max Min Ma

24、x Min Max BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.97 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. Mi

25、llimeters are given for general information only. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid. 4. Dimensions are pre-solder dip. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 4. Physical

26、dimensions, surface mount (UB version). UB 1N3595UBCA 1N3595UBD 1N3595UB 1N3595UBCC 2 1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 7 Symbol Dimensions Symbol Dimensions Inches Millimeters Inches Millimeters Min Max Min Max Min

27、 Max Min Max BH .046 .056 1.17 1.42 LS .071 .079 1.80 2.01 BL .115 .128 2.92 3.25 LW .016 .024 0.41 0.61 BW .085 .108 2.16 2.74 r .008 TYP 0.20 TYP CL .128 3.25 r1 .012 TYP 0.30 TYP CW .108 2.74 r2 .022 TYP 0.56 TYP LL1 .022 .038 0.56 0.96 r3 .008 TYP 0.20 TYP LL2 .014 .035 0.36 0.89 r4 .012 TYP 0.3

28、0TYP NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid. 4. Dimensions are pre-solder dip. 5. In accordance with ASME Y14.5M, diameters are equiv

29、alent to x symbology. * FIGURE 5. Physical dimensions, surface mount (2 pin UB version). 1N3595UB POLARITY UB2 1N3595UB2R Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 8 Ltr Dimensions Inches Millimeters Min Max Min Max A .0079 .

30、0081 0.200 0.206 B .0145 .0195 0.368 0.495 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Element evaluation performed utilizing a TO-5 header. 4. The physical characteristics of the die are: Metallization: Top (Anode): Aluminum (Al) 25,000 minimum. Bac

31、k (Cathode): Gold (Au) 4,000 minimum. Die thickness: .009 inch (0.23 mm) .002 inch (0.051 mm). FIGURE 6. Physical dimensions JANHCB and JANKCB die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 9 NOTES: 1. Dimensions are in inche

32、s. 2. Millimeters are given for general information only. 3. Element evaluation performed utilizing a UB header. 4. The physical characteristics of the die are: Metallization: Top (Anode): Aluminum (Al) 30,000 minimum. Back (Cathode): Gold (Au) 5,000 minimum. Die thickness: .008 inch (0.20 mm) .002

33、inch (0.05 mm). * FIGURE 7. Physical dimensions JANHCC and JANKCC die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 10 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

34、specified in MIL-PRF-19500 and as follows. VfrForward recovery voltage. Specified maximum forward voltage used to determine forward recovery time. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (DO-35), 2 (DO-213AA),

35、3 (US), 4 (UB), 5 (UB2), 6 (die), and 7 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices sh

36、all be metallurgically bonded, double plug construction in accordance with the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the axial direction to optimize tensile and compressive stresses. Dimensional analysis is required of all materials

37、 used to achieve axial thermal compensation. Dimensional tolerances and corresponding coefficient of thermal expansion (CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying activity to maintain qualification. Dimensional tolerances shall be su

38、fficiently tight enough to prevent excessive stresses due to the inherent CTE mismatch. The UR version shall be structurally identical to the axial leaded versions except for end-cap lead attachment. The US version shall be metallurgically bonded, thermally matched, non-cavity, double-plug construct

39、ion in accordance with the requirements of category I (see MIL-PRF-19500). 3.4.3 JANS construction. All JANS devices shall be metallurgically bonded-thermally matched non-cavity double plug constructions utilizing only category I metallurgical bond in accordance with MIL-PRF-19500. 3.5 Marking. Mark

40、ing shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes

41、 JAN, JANTX, and JANTXV can be abbreviated as J, JX, JV, and JS respectively. The part number may be reduced to J3595A, JX3595A, JV3595A, or JS3595A. No color coding shall be permitted for part numbering. 3.5.1 UR and US devices. For UR and US version devices only, all marking, except polarity may b

42、e omitted from the body, but shall be retained on the initial container. Polarity marking of UR and US devices shall consist as a minimum, a band or 3 contrasting dots around the periphery of the cathode. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical p

43、erformance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free f

44、rom other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). Provi

45、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/241N 11 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be perfor

46、med for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the firs

47、t inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JANTXV, JANTX, and JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that

48、 exceed the limits of table I herein shall not be acceptable. Screening (see table E-IV of MIL-PRF-19500) JANS JANTXV and JANTX level 1a 1b Required. Required. Not required. Required (JANTXV only). 3a Temperature cycling. Required. (1) 3c Thermal impedance (see 4.3.3). Thermal impedance (see 4.3.3). 9 IR1and VF1.Not required. 10 Method 1038 of MIL-STD-750, condition A. Method 1038 of MIL-STD-750, condition A. (2) 11 IR1, VF1, VF1 50 mV change from initial value. IR1 0.5 nA dc, or 100 percent whichever is greater. IR1, VF1.12 See 4.3.2. t =