DLA MIL-PRF-19500 169 N-2009 SEMICONDUCTOR DEVICE DIODE SILICON SWITCHING TYPES 1N3070 1N3070-1 1N3070UR-1 1N4938 1N4938-1 1N4938UR-1 JAN JANTX JANTXV JANHC AND JANKC.pdf

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1、INCH-POUND MIL-PRF-19500/169N 2 NOVEMBER 2009 SUPERSEDING MIL-PRF-19500/169M 10 APRIL 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,TYPES 1N3070, 1N3070-1, 1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC This specification is appr

2、oved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, switching diodes

3、. Three levels of product assurance are provided for each device type and two product assurance levels are provided for die, as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (DO-35), 2 (DO-7), 3 (DO-213AA), 4 and 5 (die). 1.3 Maximum ratings. TA= +25C, unless otherwise specified

4、. VBRVRWMIO(PCB)TA= 75C (1) IFSM1tp= 1s IFSM2tp= 1s TSTGand TJRJLL = .375 inch (9.53 mm) (2) RJEC(2) RJA(PCB)(2) (3) V dc V (pk) mA mA (pk) A (pk) C C/W C/W C/W 200 175 100 500 2 -65 to +175 250 100 325 (1) For temperature-current derating curves, see figure 6. (2) See figures 7 and 8 for thermal im

5、pedance curves. (3) TA= +75C for both axial and metal electrode leadless face diodes (MELF) (UR) on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR) = .061 inch (1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm)

6、diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resistance condition included is measured at IO= 200 mA dc. 1.4 Primary electrical characteristics. TA= +25C, unless otherwise indicated. VF1IF= 100mA dc IR1at VR= 175 V d

7、c trrV dc 1.0 A dc 0.1 ns 50 AMSC N/A FSC 5961 Device types 1N3070, 1N3070-1, 1N3070UR-1, and 1N4938 are inactive for new design (see 6.4). Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3

8、990, or emailed to semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revisio

9、n shall be completed by 4 February 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/169N 2 Symbol Dimensions Inches Millimeters Min Max Min Max BD .056 .075 1.42 1.91 BL .140 .180 3.56 4.57 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.

10、40 38.10 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of 1N4938, 1N4938-1 and 1N3070-1 (DO-35). DO-35 Provided by IHSNot for ResaleNo reproduction o

11、r networking permitted without license from IHS-,-,-MIL-PRF-19500/169N 3 Type Symbol Dimensions Inches Millimeters Min Max Min Max 1N3070 1N3070-1 BD .078 .107 1.98 2.72 BL .195 .300 4.95 7.62 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 NOTES: 1. Dimensions are in inches. 2. Millimeters are gi

12、ven for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions of 1N3070 and 1N3070-1 (DO-7). DO-7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/169N 4 Symbo

13、l Dimensions Inches Millimeters Min Max Min Max BD .063 .067 1.60 1.70 BL .130 .146 3.30 3.71 ECT .016 .022 0.41 0.56 S .001 0.03 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Referencing to dimension S, minimum cleara

14、nce of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions and configuration for 1N3070UR-1 and 1N4938UR-1 (DO-213AA). UR DO-213AA Provided by IHSNot for ResaleNo reproduction or networking perm

15、itted without license from IHS-,-,-MIL-PRF-19500/169N 5 Symbol Dimension Inches Millimeters Min Max Min Max A .019 .025 0.48 0.64 B .008 .012 0.20 0.30 C .007 .011 0.18 0.28 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. FIGURE 4. JANC (A-version) die dime

16、nsions for 1N4938. Design Data Metallization: Top: Cathode Au Back: Anode Au Au thickness: Top: 10,000 minimum Au thickness: Back: 4,000 minimum Chip thickness: 9 mils 2 mils (0.229mm 0.051mm) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1

17、9500/169N 6 Symbol Dimension Inches Millimeters Min Max Min Max A .016 .018 0.41 0.46 B .016 .018 0.41 0.46 C .007 .009 0.18 0.23 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. * FIGURE 5. JANC (B-version) die dimensions for 1N4938. Design Data Metallizati

18、on: Top: Anode Al Back: Cathode Au Al thickness: Top: 25,000 minimum Au thickness: Back: 4,000 minimum Chip thickness: 9 mils 1 mil (0.23mm 0.025mm) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/169N 7 2. APPLICABLE DOCUMENTS 2.1 Gene

19、ral. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the complet

20、eness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, sta

21、ndards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTM

22、ENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191

23、11-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulatio

24、ns unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer autho

25、rized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physic

26、al dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (DO-35), 2 (DO-7), 3 (DO-213AA), 4 and 5 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is des

27、ired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices shall be metallurgically bonded, double plug construction in accordance with the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the axia

28、l direction to optimize tensile and compressive stresses. Dimensional analysis is required of all materials used to achieve axial thermal compensation. Dimensional tolerances and corresponding coefficient of thermal expansion (CTE) shall be documented on the DSCC Design and Construction Form 36D and

29、 shall be approved by the qualifying activity to maintain qualification. Dimensional tolerances shall be sufficiently tight enough to prevent excessive stresses due to the inherent CTE mismatch. The UR version shall be structurally identical to the axial leaded versions except for end-cap lead attac

30、hment. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/169N 8 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. Initial container package marking s

31、hall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, and JANTXV can be abbreviated as J, JX, and JV, respectively. The part number may be reduced to J4938, JX4938, or JV4938. No color coding shall

32、be permitted for part numbering. 3.5.1 UR devices. For UR version devices only, all marking, except polarity may be omitted from the body, but shall be retained on the initial container. Polarity marking of UR devices shall consist as a minimum, a band or three contrasting dots around the periphery

33、of the cathode. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workman

34、ship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as fol

35、lows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for q

36、ualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspect

37、ion lot of this revision to maintain qualification. 4.3 Screening (JANTXV, JANTX, and JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that exceed the lim

38、its of table I herein shall not be acceptable. Screening (see table E-IV of MIL-PRF-19500) JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.3) 9 Not required 10 Method 1038 of MIL-STD-750, condition A (2) 11 IR1and VF112 See 4.3.2 (3) (4) 13 Subgroup 2 of table I herein; IR1= 100 percent of

39、initial value or 50 nA dc, whichever is greater; VF1 25mVdc. (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) Test within 24 hours after removal from test. (3) When the

40、rmal impedance is performed prior to screen 13, it is not required to be repeated in screen 13. (4) PDA 5 percent. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/169N 9 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC di

41、e shall be in accordance with appendix G of MIL-PRF-19500. Burn-in duration for the JANHC follows JANTX requirements; the JANKC level follows JANS requirements. 4.3.1.1 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-195

42、00 JANTX level screening level requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.1): Method 1038 of MIL-STD-750, condition B. VR= rated VRWM; f = 50 - 60 Hz; IO(min) or IF(min)= IO(PCB). The maximum current density of small die shall be submitted to the q

43、ualifying activity for approval. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufact

44、uring sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM,

45、IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be condu

46、cted in accordance with table E-V of MIL-PRF-19500, table I herein, and as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for su

47、bgroup testing in table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. * 4.4.2.1 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Leaded samples from the same lot may

48、be used in lieu of UR suffix sample for life test. Subgroup Method Conditions B2 1056 0C to +100C, 10 cycles. B2 1051 -55C to +175C, 45 cycles, including screening. B2 2005 IF= 100 mA, axial tensile stress = 10 lbs, TA= +150C; (not applicable to UR package). B3 1026 V(pk)= rated VRWM; f = 50 - 60 Hz; IO= 100 mA dc minimum; adjust TAor IOto obtain a minimum TJof +150C (see 4.5.1). B4 2101 Decap analysis; scribe and break only. B6 1032 TA= +175C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL