DLA MIL-HDBK-816 CHG NOTICE 1-2002 GUIDELINES FOR DEVELOPING RADIATION HARDNESS ASSURANCE DEVICE SPECIFICATIONS《辐射硬度保证仪器指南规范》.pdf

《DLA MIL-HDBK-816 CHG NOTICE 1-2002 GUIDELINES FOR DEVELOPING RADIATION HARDNESS ASSURANCE DEVICE SPECIFICATIONS《辐射硬度保证仪器指南规范》.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-HDBK-816 CHG NOTICE 1-2002 GUIDELINES FOR DEVELOPING RADIATION HARDNESS ASSURANCE DEVICE SPECIFICATIONS《辐射硬度保证仪器指南规范》.pdf（63页珍藏版）》请在麦多课文档分享上搜索。

1、I METRIC IMIL-HDBK-8169 DECEMBER 1994MILITARY HANDBOOKGUIDELINES FOR DEVELOPING RADIATIONHARDNESS ASSURANCE DEVICESPECIFICATIONSAMSC N/A FSC 59GPDISTRIBUTION STATEMENT A. Approvod for public roloaso;dlstrbutlon IS unllmltodProvided by IHSNot for ResaleNo reproduction or networking permitted without

2、license from IHS-,-MIL-HDBK-816 NOTICE 1 8 April 2002 DEPARTMENT OF DEFENSE HANDBOOK GUIDELINES FOR DEVELOPING RADIATION HARDNESS ASSURANCE DEVICE SPECIFICATIONS TO ALL HOLDERS OF MIL-HDBK-816: 1. THE FOLLOWING PAGES OF MIL-HDBK-816 HAVE BEEN REVISED AND SUPERSEDE THE PAGES LISTED: NEW PAGE DATE SUP

3、ERSEDED PAGE DATE iii 9 December 1994 iii Reprinted without change iv 8 April 2002 iv 9 December 1994 v 9 December 1994 v Reprinted without change 1 8 April 2002 1 9 December 1994 2 9 December 1994 2 Reprinted without change 3 8 April 2002 3 9 December 1994 4 8 April 2002 4 9 December 1994 5 8 April

4、 2002 5 9 December 1994 6 8 April 2002 6 9 December 1994 7 8 April 2002 7 9 December 1994 8 8 April 2002 8 9 December 1994 9 8 April 2002 9 9 December 1994 10 8 April 2002 10 9 December 1994 11 8 April 2002 11 9 December 1994 12 8 April 2002 12 9 December 1994 13 8 April 2002 13 9 December 1994 16 8

5、 April 2002 16 9 December 1994 17 8 April 2002 17 9 December 1994 18 8 April 2002 18 9 December 1994 19 9 December 1994 19 Reprinted without change 20 9 December 1994 20 Reprinted without change 21 8 April 2002 21 9 December 1994 22 8 April 2002 22 9 December 1994 23 8 April 2002 23 9 December 1994

6、24 9 December 1994 24 Reprinted without change 25 8 April 2002 25 9 December 1994 26 8 April 2002 26 9 December 1994 27 8 April 2002 27 9 December 1994 28 8 April 2002 28 9 December 1994 29 9 December 1994 29 Reprinted without change 30 8 April 2002 30 9 December 1994 31 9 December 1994 31 Reprinted

7、 without change 34 8 April 2002 34 9 December 1994 35 8 April 2002 35 9 December 1994 AMSC N/A AREA 59GP DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. NOTICE OF CHANGE METRIC Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

8、 IHS-,-MIL-HDBK-816 NOTICE 1 38 8 April 2002 38 9 December 1994 39 9 December 1994 39 Reprinted without change 46 9 December 1994 46 Reprinted without change 47 8 April 2002 47 9 December 1994 54 9 December 1994 54 Reprinted without change 55 8 April 2002 55 9 December 1994 2. RETAIN THIS NOTICE AND

9、 INSERT BEFORE TABLE OF CONTENTS. 3. Holders of MIL-HDBK-816 will verify that page changes and additions indicated above have been entered. This notice page will be retained as a check sheet. This issuance, together with appended pages, is a separate publication. Each notice is to be retained by sto

10、cking points until the standard is completely revised or canceled. Custodians: Preparing Activity: Army CR DLA - CC Navy EC Air Force 19 DLA CC (Project 59GP-0178) Review activities: Army AR, SM Navy AS, CG, MC, OS, SH Air Force 11, 99 NASA NA DTRA TDAR Provided by IHSNot for ResaleNo reproduction o

11、r networking permitted without license from IHS-,-a71 nIL-HosK-a16fOREWSD1. m. a75ilitary hmdbok IS aFWOVed for use by att DepormantaandMjemcfes of the Dcpmtmnt ofDe+mm.2. Omeficic.t _ts (retimn, addition% deletions) and my pertinent data tiich cay be of usein icpmvim this radiation tests on the tes

12、t structure can then be used to estimate the performance characteristics of the VLSI circuit. The use of test structures for LAT cannot be recommended until data and experience show definitively that test structure responses correlate reliably with the actual devices. 1.5 Qualified manufacturers lis

13、t program. The qualified manufacturers list (QML) program allows a device manufacturer the flexibility to implement best commercial practices to the maximum extent possible, while still providing product that meets the military performance needs and whose performance is stable. The manufacturing lin

14、e is controlled through the manufacturers quality management (QM) program once the QM program has been certified and qualified. Several levels of product assurance, including radiation hardness assurance (RHA), are provided for. For those devices that will be certified as RHA, the manufacturer must

15、have a technology review board that is cognizant of the factors that affect radiation hardness assurance. In addition, the manufacturer needs an RHA QM plan that establishes the procedures to be followed to ensure that the devices meet the radiation hardness assured capability level that the manufac

16、turer has selected. The certification requirements for an RHA product include a process capability demonstration, wafer fabrication certification, and a wafer acceptance plan. This topic is discussed in much more detail in MIL-PRF-19500, MIL-PRF-38534, and MIL-PRF-38535. SUPERSEDES PAGE 1 OF MIL-HDB

17、K-816 1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-MIL-HDBK-816 NOTICE 1 FIGURE 1. Proposed generic qualification system. REPRINTED WITHOUT CHANGE. 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-M

18、IL-HDBK-816 NOTICE 1 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed below are not necessarily all of the documents referenced herein, but are the ones that are needed in order to fully understand the information provided by this handbook. 2.2 Government documents. 2.2.1 Specifications, st

19、andards, and handbooks. The following specifications, standards, and handbooks form part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the latest issue of the Department of Defense Index of Specifications and Standards

20、(DoDISS) and supplement thereto. SPECIFICATIONS DEPARTMENT OF DEFENSE DNA-TR-84-220-V1 - Hardness Assured Device Specifications for Moderate Requirements. DNA-TR-84-220-V2 - Hardness Assured Device Specification a 4K X 1 CMOS/SOS Static RAM. DNA-TR-81-90 - Hardness Assured Device Specifications. MIL

21、-M-38510 - Microcircuits, General Specification for. MIL-PRF-19500 - Semiconductor Devices, General Specification for. MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. STANDARDS DEPARTMENT O

22、F DEFENSE MIL-STD-750 - Test Method Standard for Semiconductor Devices. MIL-STD-883 - Test Method Standard, Microcircuits. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-339 - Custom Large Scale Integrated Circuit Development and Acquisition for Space

23、 Vehicles. MIL-HDBK-814 - Ionizing Dose and Neutron Hardness Assurance Guidelines for Microcircuits and Semiconductor Devices. MIL-HDBK-815 - Dose-Rate Hardness Assurance Guidelines MIL-HDBK-817 - System Development Radiation Hardness Assurance (Unless otherwise indicated, copies of the specificatio

24、ns, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) SUPERSEDES PAGE 3 OF MIL-HDBK-816 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license

25、 from IHS-,-MIL-HDBK-816 NOTICE 1 2.2.2 Other Government documents, drawings, and publications. The following other Government documents, drawings, and publications form a part of this document to the extent specified herein. NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (NASA) SCR-607 - Factors for

26、 One-Sided Tolerance Limits and for Variables Sampling Plans. (Copies are available from the National Aeronautics and Space Administration (NASA), Ames Research center, Mail Stop 213-4, Moffett Field, CA 94035.) NATIONAL TECHNICAL INFORMATION SERVICE (NTIS) Experimental Statistics Handbook (Copies a

27、re available from the U.S. Department of Commerce, National Technical Information Service, 5285 Port Royal Road, Springfield, VA 22161.) 2.3 Non-Government publications. The following documents form part of this document to the extent specified herein. Unless otherwise specified, the issues of the d

28、ocuments which are DoD adopted are those listed in the latest issue of the DoDISS, and supplement thereto. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) Annual Book of ASTM Standards International, Volume 12.02 - Nuclear, Solar, and Geothermal. Annual Book of ASTM Standards International, Volume

29、 10.04 and 10.05 - Electronics. (Application for copies should be addressed to the American Society for Testing and Materials International (ASTM), 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959.) EIA/JEDEC STANDARDS EIA/JEDEC-57 - Test Procedures for the Measurement of Single Event Effects

30、 in Semiconductor Devices from Heavy Ion Irradiation. JESD-89 - Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices. (Application for copies should be addressed to Global Engineering Documents, 5 Inverness Way East, Englewood, CO 80112

31、-5704.) 2.4 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. A

32、CRONYMS, DEFINITIONS, AND SYMBOLS 3.1 Acronyms used in this handbook. The acronyms used in this handbook are defined as follows: ASTM - American Society for Testing and Materials DSCC - Defense Supply Center, Columbus DNA - Defense Nuclear Agency (now DTRA) DOD - Department of Defense DTRA - Defense

33、 Threat Reduction Agency DTRIAC - Defense Threat Reduction Information Analysis Center EPL - End Point Limits ERRIC - Electronics Radiation Response Information Center ESD - Electrostatic Discharge GQ - General Qualification SUPERSEDES PAGE 4 OF MIL-HDBK-816 4 Provided by IHSNot for ResaleNo reprodu

34、ction or networking permitted without license from IHS-,-MIL-HDBK-816 NOTICE 1 HA - Hardness Assurance JAN - Joint Army Navy (military specification trademark) LAT - Lot Acceptance Tests LET - Linear Energy Transfer (produced when a high energy ionizing particle traverses a solid) MIL-HDBK - Militar

35、y Handbook MIL-PRF - Military Performance Specification MIL-STD - Military Standard MOS - Metal Oxide Semiconductor NASA - National Aeronautics and Space Administration SPAWAR - Space and Naval Warfare Systems Command PIPL - Post-Irradiation Parameter Limit (the same as RHEPL in this document) PM -

36、Process Monitor PRF - Pulse Repetition Frequency QA - Quality Assurance QCI - Quality Conformance Inspection QM - Quality Management QML - Qualified Manufacturers List QPL - Qualified Parts List QRA - Quality and Reliability Assurance RHA - Radiation Hardness Assured or Radiation Hardness Assurance

37、RHEPL - Radiation Hardness Assurance End-Point Limit SCD - Specification Control Drawing SEC - Standard Evaluation Circuit SEE - Single Event Effects SEP - Single Event Phenomena SEU - Single Event Upset SID - Selected Item Drawing SMD - Standard Microcircuit Drawing SOCD - Source Control Drawing SP

38、C - Statistical Process Control STD - Standard TCI - Technology Conformance Inspections TCV - Technology Characterization Vehicle ULSI - Ultra Large Scale Integration VLSI - Very Large Scale Integration SUPERSEDES PAGE 5 OF MIL-HDBK-816 5 Provided by IHSNot for ResaleNo reproduction or networking pe

39、rmitted without license from IHS-,-MIL-HDBK-816 NOTICE 1 3.2 General usage for definitions and symbols. To make this handbook easier to read for those who will need to refer to it only infrequently, an attempt has been made to devise a mathematical notation which is more self-explanatory than the no

40、tations used in other recent reports related to hardness assurance. This notation is used in the definitions listed in this section and throughout the rest of the handbook. As an example of the differences, the present notation uses MEAN(PAR) and GMEAN(PAR) for the measured arithmetic and geometric

41、mean values, respectively, of a parameter; in several other reports an overline on the word PAR is used to indicate the arithmetic mean value and PARMis used to denote the geometric mean value. Conversions to the other notations, if necessary, should present no difficulties. The following is a list

42、of specific definitions: Absorbed dose - The absorbed energy usually expressed in rads. c(lower case) - The acceptance number in a sample size series test. Confidence level - The chance of rejecting a lot where there is less than probability P that any part from the lot can pass the test condition.

43、Device specification - The contractual document to which an electronic device is either sold or purchased. Diffusion lot - A set of wafers heated at one time in one diffusion furnace. Dose - See Ionizing Radiation Dose. Dose Rate - Rads per second due to ionizing radiation. Exp(x) - Napiers constant

44、, e, to the x-th power. Please note that an exponent can only be a pure number. Therefore, if the notation shows a variable that has a dimension (such as an ionizing radiation dose expressed in rads, for example) as an exponent, it should be understood that the exponent has been made dimensionless b

45、y dividing it by a quantity having a value of one but with the same dimensions as the variable in question. Fluence - The accumulated number of irradiating particles per square centimeter. Goodness of fit - The degree to which a measured probability distribution fits the assumed distribution; the CH

46、I-square test is commonly used to determine the goodness of fit. Gray - 10,000 ergs of absorbed energy per gram; equals 100 rads. i(lower case) - The subscript used to label the i-th device in a sample of devices. I(upper case) - The subscript used to label the I-th lot in a sample of lots. In-flux

47、- Measurements made on a device while it is being irradiated. Ionizing radiation dose - The accumulated absorbed energy in rads or Grays due to ionizing radiation. JAN parts - JAN parts are listed in the Qualified Manufacturers List (QML) and undergo scheduled periodic audits by the qualifying activ

48、ity to MIL-M-38510, MIL-PRF-19500, MIL-PRF-38534, and MIL-PRF-38535 requirements. TL(n, C,P)- One-sided tolerance limit. This factor takes into account the certainties resulting from small sample size statistics. It is applied to normal distributions as follows: For a sample size n, if MEAN(PAR) and

49、 STDEV(PAR) are the measured mean and standard deviation respectively for parameter PAR, then with confidence C, there is probability P, that future measurements of the parameter PAR will be less than: MEAN(PAR) + KTL(n, C, P) * STDEV(PAR) Or larger than: MEAN(PAR) - KTL(n, C, P) * STDEV(PAR) SUPERSEDES PAGE 6 OF MIL-HDBK-816 6 Provided by IHSNot for ResaleNo reproduction or networking per