DLA MIL-HDBK-815 CHG NOTICE 1-2002 DOSE-RATE HARDNESS ASSURANCE GUIDELINES《剂量率硬度保证指南》.pdf

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1、MILrHDBI6815 7 NOVEMBER I994 MILITARY HANDBOOK DOSERATE HARDNESS ASSURANCE QUIDELINES Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-CHANGE MIL-HDBK-815 NOTICE 1 10 January 2002 DEPARTMENT OF DEFENSE HANDBOOK DOSE-RATE HARDNESS ASSURANCE GUIDELINES

2、TO ALL HOLDERS OF MIL-HDBK-815: 1. THE FOLLOWING PAGES OF MIL-HDBK-815 HAVE BEEN REVISED AND SUPERSEDE THE PAGES LISTED: NEW PAGE DATE SUPERSEDED PAGE DATE 2 3 4 5 38 39 40 41 7 November 1994 10 January 2002 10 January 2002 7 November 1994 10 January 2002 10 January 2002 10 January 2002 10 January 2

3、002 2 3 4 5 38 39 40 41 Reprinted without change 7 November 1994 7 November 1994 Reprinted without change 7 November 1994 7 November 1994 7 November 1994 7 November 1994 2. RETAIN THIS NOTICE AND INSERT BEFORE TABLE OF CONTENTS. 3. Holders of MIL-HDBK-815will verify that page changes and additions i

4、ndicated above have been entered. This notice page will be retained as a check sheet. This issuance, together with appended pages, is a separate publication. Each notice is to be retained by stocking points until the standard is completely revised or canceled. Custodian Atmy - CR Navy - EC Air Force

5、 - 19 DLA-CC Review activities Atmy - AR, SM Navy - AS, CG, MC, OS, SH Air Force - 11, 99 NASA - NA DTRA - DS AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Preparing activity DLA - CC (Project 59GP-0177) FSC 59GP Provided by IHSNot for ResaleNo reproducti

6、on or networking permitted without license from IHS-,-,-MIL-HDBK-BIS 9999970 0195302 513 MIL-HDEK-815 FOREWORD 1. 2. in improving this document should be addressed to: 20363-5100, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this do

7、cument or by letter. This military handbook is approved for use by all Departments and Agencies of the Department of Defense. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use Space and Naval Warfare Systems Command, Washington DC ii Provided by I

8、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-35 9999970 0395303 45T MIL-HDBK-815 CAUTION THIS DOCUMENT HAS BEEN ASSEMBLED AS A GUIDELINE FOR THE SEMICONDUCTOR ELECTRONICS. IT IS NOT INTENDED TO BE USED AS A REQUIREMENTS DOCUMENT. THIS DOCUMENT MAY NOT

9、 CONTAIN ALL THE INFORMATION NEEDED TO ESTABLISH SUCH A PROGRAM. DEVELOPMENT OF A DOSE-RATE HARDNESS ASSURANCE PROGRAM FOR iii Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-L5 H 7799970 0195304 39b H MIL-HDBK-815 PREFACE Preparation of thi

10、s handbook has been carried out under the direction of Defense Nuclear Agency (DNA), and their contracting officers Major B. Hickman and LCDR L. Cohn. Many individuals in the hardness assurance community have contributed significantly to the preparation of this document by preparing text, offering c

11、omments, and reviewing draft documents. Special thanks must be given to Mr J. Ferry (Am) who has served as the project monitor for this work; Dr. Eligius Wolicki who served as the DNA Program Area Reviewer for Hardness Assurance and the Chairman of the Space Parts Working Group Hardness Assurance Co

12、mmittee; and to Dr. Harvey Eisen, the present DNA Program Area Reviewer for Hardness Assurance. Special acknowledgement is given to William Alfonte (JUMAN-TEMPO), Tom Ellis (NWSC), Joseph Halpin (HDL), John Harrity (IRT), Arthur Namenson (NRL), Ron Pease (MRC) Robert Poll (JAYCOR) who have contribut

13、ed significantly to the preparation of this document. Without the aid and expert knowledge of all of these individuals and the Hardness Assurance Committee of the NASAISD Space Parts Group, the development of this document would not have been possible. iv Provided by IHSNot for ResaleNo reproduction

14、 or networking permitted without license from IHS-,-,-MIL-HDBK-815 9999970 0195305 222 MIL-HDBK-815 CONTENTS PARAGRAPH PAGE 1. 1 .I 1.2 1.3 1.4 1.5 1.6 2. 2.1 2.2 2.3 3. 3.1 3.2 4. 4.1 4.2 4.3 4.4 4.5 4.6 5. 5.1 5.2 5.3 6. 6.1 FIGURE PAGE TABLE I II III IV V VI VI1 VI11 APPENDIX A. APPENDIX B. APPEN

15、DIX C. DOSE-RATE DOSE-RATE ONE-SIDED V Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NIL-HDBK-815 70 0195306 169 MIL-HDBK-815 1. SCOPE 1.1 Ccope. The scope of this document is limited to dose-rate radiation effects on semiconductor electronics and

16、is specifically intended to address hardness assurance at the piece-part level. nature of dose-rate effects sometimes requires a close interaction between system hardness assurance and piece-part hardness assurance, some system requirements are also discussed. 1.2 Users of this document. Because the

17、 This document is written primarily for those individuals who are involved It also provides a guide for designers of radiation hardened systems with hardness assurance activities. and, as a result, is an aid in developing hardness assurance design documentation (HADD). 1.3 Document application. This

18、 document primarily discusses piece-part hardness assurance methods for the dose-rate environment, and addresses system hardness assurance topics only as they are necessary to complete the discussion of piece part hardness assurance. categorizing of piece-parts according to certain criteria, which w

19、ill determine the controls needed during part procurement. systems and for different contracting organizations will not be discussed in detail in this document. Thus, the discussion wilt deal with the radiation Specific activities and functions which may be significantly different for different 1.3.

20、1 Dose-rate dependent problems. Certain dose-rate dependent problems, such as burnout and latchup, In these cases, system- and circuit-level, or both cannot effectively be handled at the piece-part level. design solutions may be the most effective means of ensuring survival. 1.4 Effects. This sectio

21、n provides a brief overview of the important elements of dose-rate hardness The following sections of the document will address some of these issues in greater detail. assurance. summary of dose-rate effects is shown on figure 1. A 1.4.1 Photocurrents. The dose-rate environment produces transient cu

22、rrent surges in semiconductor devices. In a single junction, the current is called photocurrent (I ) and flows in the direction of junction leakage current. In transistors, the current surge in the coylector-base junction is called the primary photocurrent (I secondary photocurrentsP81 ). ) and may,

23、 in certain cases, be amplified by the transistor gain to produce SP 1.4.2 Discrete devices. In discrete devices, the photocurrent may appear as a transient noise pulse, interfering with the normal operation of the device or the circuit in which it is used. If the radiation is intense enough and if

24、the resulting energy deposited in the device is great enough, the device may burn out. 1.4.3 Inteqrated circuits. Dose-rate effects in integrated circuits are similar to the effects observed One common term which is used to describe the dose-rate effect in integrated circuits in discrete devices. is

25、 “upset.“ unwanted operating state as a result of the radiation. linear circuits may appear as an output voltage transient lasting 10 or more microseconds, along with power supply surge currents. stored data (bit flip), or simply a deviation in output voltage which is defined as being unacceptable f

26、or proper operation of the device. In most cases, the device will recover and continue to function normally, once the radiation pulse terminates and the induced transient subsides. available, the device may be damaged and may not recover after the radiation pulse. The device is said to have upset wh

27、en the dose-rate effect results in the device being in an For example, the dose rate response of bipolar Digital circuits may experience a change in output state, a change of state of However, if sufficient energy is 1.4.4 Latchup. In both linear and digital integrated circuits, the device may exper

28、ience an effect called four-layer latchup. Should the device enter a latchup condition, the circuit will cease to operate normally, and may in fact burn out. 1.5 Part categories by effect. A summary of these effects is shown on figure 1. It should be noted that the parts must be categorized separate

29、ly for each dose-rate radiation effect. HNC for latchup but a HCC-1 for upset. Therefore, the device would be categorized as HCC-I. For example, a dielectrically isolated integrated circuit may be judged to be 1.6 Documentation. Hardness assurance for piece parts takes place during the system produc

30、tion and parts procurement phases. in detail in the hardness assurance design documentation (HADD), are put into effect during the hardness assurance phase. The tests and screens which were determined during the design phase, and are described 1 Provided by IHSNot for ResaleNo reproduction or networ

31、king permitted without license from IHS-,-,-MIL-HDBK-815 NOTICE 1 1.6.1 Desian documentation. This is a collection of information on the design hardening techniques used, the Sun/ivability/vulnerability analysis, configuration and quality control, test data, procurement specifications, management, a

32、nd any other information necessary for production of the systems: 11 following: 1.6.1.1 TvDical documentation. These documents may vary between systems, but a common set would contain the a. b. An introduction. Providing a general systems operation and functional description. An HCl Index. Providing

33、 a hardness critical item list which relates hardness critical parts to their application. The hardness criticality is indicated and cross-referenced to analysis. A hardness assurance plan. Presenting the management organization and technical requirements which are to be implemented throughout the p

34、roduction period. An analysis discussion. Containing the survivability/vulnerability analysis and any related information. c. d. - I/ For a more complete description of the HADD, see 6.1 herein. REPRINTED WITHOUT CHANGE. 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without

35、license from IHS-,-,-MIL-HDBK-815 NOTICE 1 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed below are not necessarily all of the documents referenced herein, but are the ones that are needed in order to fully understand the information provided by this handbook. 2.2 Government documents. 2.

36、2.1 SDecifications. standards. and handbooks. The following specifications, standards, and handbooks form part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the latest issue of the Department of Defense Index of Specifi

37、cations and Standards (DoDISS) and supplement thereto. SPECIFICATIONS DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. MIL-M-38510 - Microcircuits, General Specification for. MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specificati

38、on for. STAN DARDS DEPARTMENT OF DEFENSE MIL-STD-202 - Test Method Standard, Electronic and Electrical Component Parts. MIL-STD-750 - Test Method Standard for Semiconductor Devices. MIL-STD-883 - Test Method Standard, Microcircuits. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-814 - Ionizing Dose and Ne

39、utron Hardness Assurance Guidelines for Microcircuits and Semiconductor Devices. MIL-HDBK-816 - Guidelines for Developing Radiation Hardness Assurance Device Specifications. MIL-HDBK-817 - System Development Radiation Hardness Assurance. (Unless otherwise indicated, copies of the specifications, sta

40、ndards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 191 11- 5094.) SUPERSEDES PAGE 3 OF MIL-HDBK-815 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

41、 IHS-,-,-MIL-HDBK-815 NOTICE 1 2.3 Non-Government Dublications. The following documents form part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the latest issue of the DoDISS, and supplement thereto.

42、 AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM E666 ASTM E668 - - Standard Practice for Calculating Absorbed Dose from Gamma or X Radiation. Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electro

43、nic Devices. Standard Test Method for Measuring Steady-State Primary Photocurrent. Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests. ASTM F448 ASTM F526 - - ASTM F744 - Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Int

44、egrated Circuits. (Application for copies should be addressed to the American Society for Testing and Materials (ASTM), 1 O0 Barr Harbor Drive, West Conshohocken, PA 19428-2959.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute

45、 the documents. These documents also may be available in or through libraries or other informational services.) 2.4 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document,

46、 however, supersedes applicable laws and regulations unless a specific exemption has been obtained. SUPERSEDES PAGE 4 OF MIL-HDBK-815 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-815 NOTICE 1 3. DEFINITIONS 3.1 Acronyms used in this han

47、dbook. The acronyms used in this handbook are as follows: a. CCB b. HA c. HADD d. HCC e. HCI f. HM g. HNC h. PMPCB i. SPO - Configuration Control Board - Hardness assurance - Hardness assurance design documentation - Hardness-critical category - Hardness critical item - Hardness maintenance - Hardne

48、ss noncritical - - Parts, Material and Process Control Board System Project Office. (The SPO is the overall controlling organization for the project under consideration. It is intended to be a generic term so as to standardize, for the purposes of this document, such expressions as system, system pr

49、oject, Project Managers Office, Project Manager, procurement agency, and contracting agency.) 3.2 Definitions and symbols. For the purpose of this handbook the following definitions and symbols shall apply. 3.2.1 Burnout. Burnout is the failure of a device subjected to electrical overstress. Typically, thermal damage has occurred within one or more device junctions or within the