DLA DSCC-DWG-04029 REV A-2005 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH POWER TYPE 2N5927 [Cancelled DLA MIL-S-19500 440 A CANC NOTICE 3 DLA MIL-S-19500 440 A VALID NOTICE 2.pdf

《DLA DSCC-DWG-04029 REV A-2005 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH POWER TYPE 2N5927 [Cancelled DLA MIL-S-19500 440 A CANC NOTICE 3 DLA MIL-S-19500 440 A VALID NOTICE 2.pdf》由会员分享，可在线阅读，更多相关《DLA DSCC-DWG-04029 REV A-2005 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH POWER TYPE 2N5927 [Cancelled DLA MIL-S-19500 440 A CANC NOTICE 3 DLA MIL-S-19500 440 A VALID NOTICE 2.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE APPROVED Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Roger Kissel DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OH http:/www.dscc.dla.mil/programs/milspec/docsea

2、rch.asp Original date of drawing CHECKED BY Alan Barone TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927 14 March 2005 APPROVED BY Thomas Hess SIZE A CODE IDENT. NO. 037Z3 DWG NO. 04029 REV PAGE 1 OF 11 AMSC N/A 5961- E074 MIL-S-19500/440 has been cancelled. This drawing

3、may be used as a substitute. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04029 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing describes the requirements for NPN, sili

4、con, high-power transistors. 1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example: 04029 - 01 NONTX, TX, TXV | | | Drawing number Device type Quality Level 1/ 1.2.1 Device types. The device types identify the quality assurance level of the devices as foll

5、ows: Device type Figure number Package 04029-01 1 Stud 04029-01TX 1 Stud 04029-01TXV 1 Stud 1.3 Maximum rating. TC= +25C unless otherwise specified. PT (1) TC= +25C PT (1) TC= +100C VCEOVCBOVEBOIC (2) IBTJand TSTGRJCW W V dc V dc V dc A dc A dc C C/W 350 200 120 150 10 100 20 -65 to +200 0.5 (1) Bet

6、ween TC= +25C and TC= +200C, linear derating factor (average) = 2.0 W/C. (2) Pulsed (see 4.4.1) = 120 A. 1.4 Primary electrical characteristics. hFE (1) VBE (1) VCE(sat)(1) IC= 120 A dc VCE= 4 V dc IC= 70 A dc VCE= 2 V dc IC= 40 A dc VCE= 2 V dc IC= 20 A dc VCE= 2 V dc IC= 70 A dc VCE= 2 V dc IC= 12

7、0 A dc VCE= 4 V dc IC= 70 A dc IB= 7 A dc IC= 120 A dc IB= 24 A dc Min 5.0 Min 10 Max 40 Min 15 Max 50 Min 30 Max 120 Max 1.5 Max 3.0 Max 0.75 Max 2.0 (1) Pulsed (see 4.4.1). Limits RJC|hfe| IC= 5 A dc tontstfC/W VCE= 10 V dc f = 100 KHz IC= 70 A dc Min 5 Max .5 20 7.0 s 4.0 s 6.0 s 1/ Quality level

8、: non-TX (-01 no suffix), -01TX, and -01TXV levels correspond to JAN, JANTX, and JANTXV equivalent quality requirements in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT

9、 NO. 037Z3 DWG NO. 04029 REV PAGE 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or

10、 as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifi

11、cations, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-P

12、RF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Docume

13、nt Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable la

14、ws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.1.1 Device capability. The devices must be capable of meeting the following MIL-STD-750 test

15、conditions: Step Method Condition 1 3053 Load condition C (unclamped inductive load), TC= +25C, single 10 ms pulse, tr= tf 1s, RBB1= 1, RBB2= , VBB1= 6.2 V dc, VBB2= 0 V dc, IC= 50 A dc, VCC= 25 V dc, L = 5mH. See 3.1.2. Endpoints: Group A, subgroup 2. 2 3053 Load condition B (clamped switching dest

16、ructive), TA= 25C, single 2 ms pulse, tr= tf 1s, RBB1= 1, RBB2= 20, VBB1= 8.5 V dc, VBB2= 3 V dc, IC= 70 A dc, VCLAMP= 125 V dc, L = 68 H, RL= 0, clamping diode 2N5926 with emitter shorted to base. Device fails if clamp voltage is not reached. See 3.1.2. Endpoints: Group A, subgroup 2. 3 3051 TC= 10

17、0C, t = 1 s, 1 cycle, see 3.1.2 and figure 2. Test 1 - VCE= 4 V dc, IC= 50 A dc Test 2 - VCE= 50 V dc, IC= 4 A dc Test 3 - VCE= 120 V dc, IC= 850 mA dc 4 3131 IMmeasurement 10 mA. VCEmeasurement voltage 25 V. IHcollector heating current 10 A. VHcollector-emitter heating voltage 20 V. tHheating time

18、. steady-state (see method 3131 of MIL-STD-750 for definition). tMDmeasurement delay time 20s maximum. tSWsample window time. 10s maximum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDEN

19、T NO. 037Z3 DWG NO. 04029 REV PAGE 4 3.1.2 Safe Operating Area (DC Operation) test. Each transistor shall sustain the applicable test conditions and the following acceptance criteria shall apply: (a) IC(for each transistor) shall not vary more than 10% during the dc operation; and (b) All other spec

20、ified end-point test(s) limits shall not be exceeded, after the dc-operation test. (c) Correlation note: satisfactory endurance of the transistors throughout tests 1, 2, and 3 respectively (paragraph 3.1.1, step 3) is directly associable with ascertainment of the safe operating area for the transist

21、ors as illustrated in the nomograph of figure 2. 3.2 Abbreviations, symbol, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.3 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500

22、 and figure 1 herein. 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. 3.3.2 Internal construction. Multiple chip construction shall not be permitted. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Manufacturer eligibi

23、lity. To be eligible to supply devices to this drawing, the manufacturer shall perform conformance inspection in accordance with the procuring activitys testing requirements as specified in 4.2 and 4.3 herein. Devices specified herein shall meet traceability as specified in MIL-PRF-19500. It is proh

24、ibited for a manufacturer not listed as an approved source to mark devices with this drawing number. 3.5.1 Certificate of compliance. A certificate of compliance shall be required from manufacturers requesting to be an approved source of supply. 3.5.2 Certificate of conformance. A certificate of con

25、formance shall be provided with each lot of devices delivered in accordance with this drawing. 3.6 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable materials should be used to the maximum extent possible provided that the material meets

26、 or exceeds the operational and maintenance requirements, and promotes economically advantageous life cycle costs. 3.7 Workmanship. The semiconductor shall be uniform in quality and free from any defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Sampling and inspectio

27、n. Unless otherwise specified, sampling and inspection procedures shall be performed in accordance with MIL-PRF-19500, and as specified herein. 4.2 Screening. All TX and TXV devices shall be screened in accordance with table IV of MIL-PRF-19500 as appropriate, and as specified herein. The following

28、measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV Measurement of MIL-PRF-19500) TX and TXV levels 4 Optional 9 Not applicable 11 ICES1and hfe112 Burn-in (see 4.2.1). 13 ICES1 = 100 percent of i

29、nitial, maximum, subgroup 2 of table I herein; hFE1= 25 percent, maximum, subgroup 2 of table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04029 REV PAGE

30、5 4.2.1 Power burn in. Power burn-in conditions are in accordance with method 1039 of MIL-STD-750, test condition B and as follows: TA= 30C, 5C, VCE 4.5 V dc, TJ= 187.5C 12.5C. NOTE: No heatsink or forced air cooling on the devices shall be permitted. 4.3 Conformance inspection. Conformance inspecti

31、on shall consist of the inspections and tests specified in groups A and B herein. 4.3.1 Group A inspection. Group A inspection shall be conducted in accordance with the conditions specified for subgroup testing in table I herein. 4.3.2 Group B inspection. Group B inspection shall be conducted in acc

32、ordance with the conditions specified for subgroup testing in table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) and delta requirements shall be table I, subgroup 2 herein or as specified. 4.3.2.1 Group B sample selection. Samples selected fr

33、om group B inspection shall meet all of the following requirements: a. Must be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for

34、life test (group B for non-TX, TX, and TXV) may be pulled prior to the application of final lead finish. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified i

35、n section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04029 REV PAGE 6 TABLE I. Group A inspection. MIL-STD-750 Limit Inspection 1/ Method Condit

36、ions Symbol Min Max Unit Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Breakdown voltage, collector to emitter 3011 Bias condition D; IC= 200 mA dc; pulsed (see 4.4.1) V(BR)CEO120 V dc Collector to base cutoff current 3041 Bias condition C; VBE0 V dc; VCE= 150 V dc ICES12 mA dc Emitter

37、 to base current 3061 Bias condition D; VEB= 10 V dc IEBO1 mA dc Base emitter voltage 3066 Test condition B, IC= 70 A dc, VCE= 2 V dc, pulsed (see 4.4.1) VBE11.5 V dc Base emitter voltage 3066 Test condition B, IC= 120 A dc, VCE= 4 V dc, pulsed (see 4.4.1) VBE23.0 V dc Saturation voltage and resista

38、nce 3071 IC= 70 A dc; IB= 7 A dc; pulsed (see 4.4.1) VCE(SAT)10.75 V dc Saturation voltage and resistance 3071 IC= 120 A dc; IB= 24 A dc; pulsed (see 4.4.1) VCE(SAT)22.0 V dc Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 20 A dc pulsed (see 4.4.1) hFE130 120 Forward-current transfer ratio 307

39、6 VCE= 2 V dc; IC= 70 A dc pulsed (see 4.4.1) hFE210 40 Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 40 A dc pulsed (see 4.4.1) hFE315 50 Subgroup 3 High-temperature operation TA= +150C; n = 15, c = 0 Collector-base cutoff current 3041 Bias condition C; VCE= 100 V dc, VBE= 0 V dc ICES210 mA

40、dc Low-temperature operation TA = -65C Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 70 A dc; pulsed (see 4.4.1) hFE410 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHI

41、O SIZE A CODE IDENT NO. 037Z3 DWG NO. 04029 REV PAGE 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 4 Pulse response Turn-on time 3251 Test condition B, VCC= 70 V dc, Rc= 1 , VBE1= 8.5 V dc, Rb= 1 , VBE2= 10 V dc; n = 15, c =

42、 0 ton7.0 s Turn-off time ts4.0 s Fall time tf6.0 s Magnitude of common emitter small signal short-circuit forward-current transfer ratio 3306 VCE= 10 V dc; IC= 5 A dc; f = 100 kHz |hfe| 5 20 Subgroups 5, 6 and 7 Not applicable 1/ See MIL-PRF-19500 for sampling plan. Provided by IHSNot for ResaleNo

43、reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04029 REV PAGE 8 TABLE II. Group B inspection for TX and TXV. Inspection 1/ MIL-STD-750 Small lot CI Method Conditions Subgroup 1 Solderability 2026 Re

44、sistance to solvents 1022 n = 3, c = 0 Subgroup 2 Temperature cycling (air to air) 1051 Test condition C n = 6, c = 0 Hermetic seal Fine leak Gross leak 1071 Electrical measurements See table I, subgroup 2 herein. Subgroup 3 Steady state operation life 1027 TA= 30C 5C, VCE 4.5 V dc, TJ= 187.5C, 12.5

45、C, 168 hours minimum n = 12, c = 0 Electrical measurements 3041 ICES1= +100% of initial value, maximum 3076 hFE125 percent change of initial value, maximum Subgroup 4 Decap internal visual (design verification) 2075 n = 1, c = 0 Subgroup 5 Thermal resistance 3131 RJC= .5C/W; see 3.1.1 n = 6, c = 0 S

46、ubgroup 6 High-temperature life (nonoperating) 1032 t = 168 hours minimum, T = +200C n = 12, c = 0 Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE

47、 SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04029 REV PAGE 9 NOTES: 1. Dimensions are in inches. 2. Maximum pitch diameter of plated thread shall be basic pitch diameter (.4675 inch). 3. Angular orientation of terminals with respect to hex flats is optional. 4. Collec

48、tor shall be electrically connected to the case. FIGURE 1. Physical dimensions. . 435. 350Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04029 REV PAGE 10 FIGURE 2. Maximum safe operating graph (continuous dc). VCE(VOLTS) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CE