ASTM F3192-2016 Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization《用于硅通孔(TSV)金属化的高纯度铜溅射靶的标准规格》.pdf

《ASTM F3192-2016 Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization《用于硅通孔(TSV)金属化的高纯度铜溅射靶的标准规格》.pdf》由会员分享，可在线阅读，更多相关《ASTM F3192-2016 Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization《用于硅通孔(TSV)金属化的高纯度铜溅射靶的标准规格》.pdf（5页珍藏版）》请在麦多课文档分享上搜索。

1、Designation: F3192 16Standard Specification forHigh-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization1This standard is issued under the fixed designation F3192; the number immediately following the designation indicates the year oforiginal adoption or, in the case of

2、revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This specification details the generic criteria require-ments of high pure copper sputtering tar

3、gets used as thin filmmaterial for through-silicon vias (TSV) metallization in ad-vanced packaging.1.2 Sputtering target purity, grain size, inner quality,bonding, dimension, and appearance specifications are in-cluded in this specification along with references for qualifi-cation test methods. Reli

4、ability, certification, traceability, andpackaging requirements are also included.1.2.1 Purity Requirements:1.2.1.1 Metallic element impurities, and1.2.1.2 Non-metallic element impurities.1.2.2 Grain Size RequirementsGrain size.1.2.3 Inner Quality RequirementsInternal defect.1.2.4 Bonding Requiremen

5、ts:1.2.4.1 Backing plate, and1.2.4.2 Bonding ratio.1.2.5 Configuration Requirements:1.2.5.1 Dimension,1.2.5.2 Tolerance, and1.2.5.3 Surface roughness.1.2.6 Appearance RequirementsSurface cleanness.1.3 The values stated in SI units are to be regarded asstandard. No other units of measurement are incl

6、uded in thisstandard.1.4 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior t

7、o use.2. Referenced Documents2.1 ASTM Standards:2B209 Specification for Aluminum and Aluminum-AlloySheet and PlateB248 Specification for General Requirements for WroughtCopper and Copper-Alloy Plate, Sheet, Strip, and RolledBarE112 Test Methods for Determining Average Grain SizeE1001 Practice for De

8、tection and Evaluation of Discontinui-ties by the Immersed Pulse-Echo Ultrasonic MethodUsing Longitudinal WavesF1512 Practice for Ultrasonic C-Scan Bond Evaluation ofSputtering Target-Backing Plate AssembliesF2113 Guide for Analysis and Reporting the Impurity Con-tent and Grade of High Purity Metall

9、ic Sputtering Targetsfor Electronic Thin Film ApplicationsF2405 Test Method for Trace Metallic Impurities in HighPurity Copper by High-Mass-Resolution Glow DischargeMass Spectrometer2.2 ASME Standard:Y14.5M Dimensioning and Tolerancing33. Terminology3.1 Definitions:3.1.1 backing plate, nplate used t

10、o support the sputteringmaterial used in deposition processes.3.1.1.1 DiscussionAssembling with the sputtering mate-rial by various bonding methods.3.1.2 sputtering target, nsource material during sputterdeposition processes; typically, a piece of material inside thevacuum chamber that is exposed to

11、 bombarding ions, knockingsource atoms loose and onto samples.3.1.2.1 DiscussionThe sputtering target product can be1This specification is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.17 on SputterMetallization.Current edition approv

12、ed Sept. 1, 2016. Published October 2016. DOI: 10.1520/F3192-16.2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM websi

13、te.3Available from American Society of Mechanical Engineers (ASME), ASMEInternational Headquarters, Two Park Ave., New York, NY 10016-5990, http:/www.asme.org.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States1classified as monolithic or

14、 assembly type according to theconfigurations as shown in Fig. 1.3.2 Definitions of Terms Specific to This Standard:3.2.1 finished product, nfor the purposes of this standard,a manufactured sputtering target ready for use.3.2.2 material lot, nfor the purposes of this standard,material melted into on

15、e ingot and processed as one continuousbatch in subsequent thermal-mechanical treatments.4. Ordering Information4.1 Advanced packaging manufacturers may use this speci-fication to specify required target performance to the supplierwhen purchasing sputtering target. Target suppliers may alsouse this

16、specification to specify material requirements to rawmaterial suppliers.4.2 Orders for pure copper sputtering targets shall includethe following:4.2.1 Grade and special requirements concerning impurities(Section 5),4.2.2 Grain size, if required (Section 6),4.2.3 Inner quality, if required (Section 7

17、),4.2.4 Bonding ratio, if required (Section 8),4.2.5 Dimensions, Tolerance and Surface Roughness (Sec-tion 9),4.2.6 Certification required (Section 14), and4.2.7 Whether or not a sample representative of the finishedproduct is required to be provided by the supplier to thepurchaser.5. Purity Require

18、ment5.1 Metallic Element Impurities:5.1.1 Grades of copper sputtering targets for through-siliconvias (TSV) metallization are defined in Table 1 based ontypical metallic impurity content of the elements listed in thetable. Impurity contents are reported in parts per million byweight (wt ppm). Additi

19、onal elements may be analyzed andreported as agreed upon between the purchaser and thesupplier.5.1.2 General acceptable analysis methods and detectionlimits are specified in Guide F2113. Use Test Method F2405 toanalyze the purity of copper by high-mass resolution glowdischarge mass spectrometer (GDM

20、S).5.1.3 For most metallic species, the detection limit byGDMS is on the order of 0.01 wt ppm. With specialprecautions, detection limits to sub-ppb levels are possible.Elements not detected will be counted and reported as presentat the minimum detection limit (mdl).5.1.4 Other analytical techniques

21、may be used providedthey can be proved equivalent to the methods specified andhave mdl less than or equal to the specified methods.5.1.5 Acceptable limits and analytical techniques for par-ticular elements in critical applications may be agreed uponbetween the purchaser and the supplier.5.2 Nonmetal

22、lic Element Impurities:5.2.1 Nonmetallic element impurities that shall be analyzedand reported are carbon, hydrogen, nitrogen, oxygen, andsulfur. Maximum limits for nonmetallic impurities shall be asagreed upon between the purchaser and the supplier. Typically,nonmetallic impurities should be as low

23、 as shown in Table 2.5.2.2 General acceptable analysis methods and detectionlimits are specified in Guide F2113. Elements not detected willbe counted and reported as present at the mdl.5.2.3 Other analytical techniques may be used providedthey can be proved equivalent to the methods specified andhav

24、e mdl less than or equal to the specified methods.6. Grain Size Requirement6.1 The average and the maximum grain size shall be asagreed upon between the purchaser and the supplier. Theaverage and the maximum grain size are generally controlledwithin 100 and 200 m.6.2 Average grain size shall be meas

25、ured and reported inaccordance with Test Methods E112 or another equivalentmethod.6.3 Maximum grain size shall be established by making anoptical or scanning electron micrograph of a polished andetched specimen typical of the finished product. The magnifi-cation shall be calibrated to 610 % of nomin

26、al using anappropriate gage. At least 50 grains shall be resolved in themicrograph. The maximum grain size is the diagonal measureof the largest copper crystal visible in the field of view dividedby the magnification.6.4 Average grain size and maximum grain size can alter-natively be established usi

27、ng computer-assisted image analysismethods. If image analysis methods are used, then the averagegrain size is defined as the mean value obtained from the graindiameter distribution data. The maximum grain size is definedas the largest grain diameter recorded in the grain sizedistribution set. At lea

28、st 50 grains shall be included in theimage analysis data set.7. Inner Quality Requirement7.1 Internal defect such as inclusions and pores which affectsputtering film quality shall not exist inside the target. TheFIG. 1 Sputtering Target ConfigurationF3192 162supplier should promise the target inner

29、quality by rawmaterials control and target fabricating methods.7.2 Internal defects which are defined as discontinuities inthe bulk material shall be measured and reported in accordancewith Guide E1001 or another equivalent method.8. Bonding Requirement8.1 Backing PlateFor the assembly sputtering ta

30、rget, alu-minum alloy and copper alloy can be used as a backing platefor bonding. The backing plate materials should meet therequirements of Specifications B209 or B248. Other backingTABLE 1 Suggested Copper Sputtering Target Grades and Impurity Content RequirementsNOTE 1Copper purity is 100 % subtr

31、act the sum of impurities contents listed in this table.Element Units Test MethodCu Purity, %99.995 %(4N5)99.999 %(5N)99.9999 %(6N)Ag ppmw GDMS #25 #2 #0.3Al ppmw GDMS #0.5 #0.05As ppmw GDMS #5 #0.1 #0.02Bi ppmw GDMS #1 #0.2 #0.02Ca ppmw GDMS #0.5 #0.02Cd ppmw GDMS #1 #0.1 #0.02Co ppmw GDMS #0.3 #0.

32、02Cr ppmw GDMS #0.1 #0.02F ppmw GDMS #1Fe ppmw GDMS #10 #0.5 #0.1K ppmw GDMS #0.02Mn ppmw GDMS #0.5 #0.1 #0.02Na ppmw GDMS #0.02Ni ppmw GDMS #10 #0.5 #0.1P ppmw GDMS #3 #0.1 #0.02Pb ppmw GDMS #5 #0.05 #0.02Sb ppmw GDMS #4 #0.1 #0.02Se ppmw GDMS #3 #0.1 #0.05Si ppmw GDMS #0.05 #0.05Sn ppmw GDMS #2 #0

33、.1 #0.05Te ppmw GDMS #2 #0.1 #0.05Th ppmw GDMS #0.0005U ppmw GDMS #0.0005Zn ppmw GDMS #1 #0.1 #0.05S ppmw GDMS #15 #1 #0.05TABLE 2 Suggested Nonmetallic Impurity RequirementElement Units Test MethodCu Purity, %99.995 %(4N5)99.999 %(5N)99.9999 % (6N)C ppmw fusion and gasextraction/infraredspectroscop

34、y#20 #10 #1N ppmw fusion and gasextraction#10 #5 #1O ppmw fusion and gasextraction/infraredspectroscopy#5 #5 #1TABLE 3 Suggested Bonding RequirementABonding Method Bonding Ratio Single-Defect Area/the Whole Bonding AreaDiffusion bonding $98 % #1.5 %AOther bonding method and bonding ratio request sha

35、ll be agreed upon between the purchaser and the supplier.F3192 163plate material and requirements shall be agreed upon betweenthe purchaser and the supplier.8.2 Bonding Rato:8.2.1 Diffusion bonding is very commonly used in sputter-ing target-backing plate assembly. The bonding quality shallmeet the

36、requirements of Table 3.8.2.2 The bonding ratio shall be measured and reported inaccordance with Practice F1512 or another equivalent method.9. Dimensions, Tolerance, and Surface RoughnessRequirement9.1 Each product shall conform to an appropriate engineer-ing drawing agreed upon between the purchas

37、er and thesupplier.9.2 Nominal dimensions, tolerances, and other attributesshall be measured and reported in accordance with ASMEY14.5M or another equivalent method.9.3 Normally, the sputtering surface roughness prepared bymachining or polishing shall be less than 1.6 m.10. Appearance Requirement10.

38、1 The target surface appearance shall be agreed uponbetween the purchaser and the supplier.10.2 Surfaces shall be free of any contaminates such as dirtor oils that could adversely affect the performance of thematerial as agreed upon between the purchaser and thesupplier.11. Sampling Requirement11.1

39、Analysis for target properties (including impurity, grainsize, inner quality, bonding ratio, dimension and tolerances,and surface roughness and appearance) shall be performed onsamples that are representative of the finished sputtering target.11.1.1 Unless otherwise agreed upon between the purchaser

40、and the supplier, impurity analyses for metallic and nonmetal-lic impurities shall be made by the supplier for one or moresample specimens that are representative of the production lot.These data shall be averaged to establish conformance with thegrade designation (5.1), other metallic impurity limi

41、ts (5.1),and the agreed upon limits for nonmetallic content (5.2).11.1.2 Unless otherwise agreed upon between the purchaserand the supplier, grain size analyses shall be made by thesupplier for one or more sample specimens after thermal-mechanical treatments for the lot of titanium material. Theseda

42、ta shall be averaged to establish conformance with the grainsize designation (6.1).11.2 Suggested Sampling InformationSee Table 4.12. Traceability Requirements12.1 It will be the responsibility of the target supplier toestablish and maintain an incoming raw material certification,inspection, and tra

43、ceability process, which will ensure thatmanufactured target components meet the requirements of thisspecification.12.2 Every deliverable item shall have some scheme ofidentification on the exterior bag or box so that traceability isprovided from the raw material supplier to the final finished,packa

44、ged product.13. Reliability Requirements13.1 Upon request, the manufacturer should provide sput-tering reliability data accompanied by the sputtering qualifica-tion test. This typically involves lifetime testing of the sputter-ing target with desired film properties (usually kwh is used asmeasuremen

45、t unit). The spent target can be analyzed byprofilometer to learn the left minimum thickness, h1, of thesputtering material as shown in Fig. 2. Normally, for safety, theh1 should be more than 2 mm.14. Certification14.1 The target supplier is responsible for defining,establishing, and executing a tes

46、ting program for sputteringtarget based on the requirements outlined within this specifi-cation.14.2 When required by the purchaser a certificate ofanalysis/compliance that documents the finished target shall beprovided by the supplier.14.3 The certificate of analysis/compliance shall state themanuf

47、acturers or suppliers name, the suppliers lot number,the grade level, impurity levels, method of analysis (Section 5),and any other information as agreed upon between the pur-chaser and the supplier.15. Packaging15.1 Every target shall be packed as one single unit. Eachpiece shall be sealed by vacuu

48、ming inert gas to avoid contami-nation and oxidation and shall be packaged well with cushionmaterial and enhanced structure to avoid damage.15.2 The packaging shall have a label affixed that clearlyidentifies the product name (with purity grade and material), lotnumber, and any other necessary trace

49、ability characteristics(Section 12).TABLE 4 Suggested Sampling RequirementMeasurement Item Sampling Time Sample Numbers NotesImpurities After ingot cutting 1 or 2 pieces/lot 5.1Grain size After thermal-mechanicaltreatments1 or 2 pieces/lot 6.1Inner quality After thermal-mechanicaltreatmentsEach 7.1Bonding ratio After bonding Each 8.2Dimension and tolerances Finished product Each 9.1Surface roughness Finished product Each 9.3Appearance Finished product Each 10.1F3192 16415.3 The packaging shall be capable of withstanding astorage period