ASTM F980-2016 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火标准指南》.pdf

《ASTM F980-2016 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火标准指南》.pdf》由会员分享，可在线阅读，更多相关《ASTM F980-2016 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火标准指南》.pdf（7页珍藏版）》请在麦多课文档分享上搜索。

1、Designation: F980 16Standard Guide forMeasurement of Rapid Annealing of Neutron-InducedDisplacement Damage in Silicon Semiconductor Devices1This standard is issued under the fixed designation F980; the number immediately following the designation indicates the year of originaladoption or, in the cas

2、e of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.Asuperscriptepsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide defines the requirements and procedures fortesting silicon discrete semiconductor de

3、vices and integratedcircuits for rapid-annealing effects from displacement damageresulting from neutron radiation. This test will produce degra-dation of the electrical properties of the irradiated devices andshould be considered a destructive test. Rapid annealing ofdisplacement damage is usually a

4、ssociated with bipolar tech-nologies.1.1.1 Heavy ion beams can also be used to characterizedisplacement damage annealing (1)2, but ion beams havesignificant complications in the interpretation of the resultingdevice behavior due to the associated ionizing dose. The use ofpulsed ion beams as a source

5、 of displacement damage is notwithin the scope of this standard.1.2 The values stated in SI units are to be regarded asstandard. No other units of measurement are included in thisstandard.1.3 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is

6、theresponsibility of the user of this standard to consult andestablish appropriate safety and health practices and deter-mine the applicability of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:3E264 Test Method for Measuring Fast-Neutron ReactionRates by Radioactivati

7、on of NickelE265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32E666 Practice for Calculating Absorbed Dose From Gammaor X RadiationE720 Guide for Selection and Use of Neutron Sensors forDetermining Neutron Spectra Employed in Radiation-Hardness Tes

8、ting of ElectronicsE721 Guide for Determining Neutron Energy Spectra fromNeutron Sensors for Radiation-Hardness Testing of Elec-tronicsE722 Practice for Characterizing Neutron Fluence Spectra inTerms of an Equivalent Monoenergetic Neutron Fluencefor Radiation-Hardness Testing of ElectronicsE1854 Pra

9、ctice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic PartsE1855 Test Method for Use of 2N2222A Silicon BipolarTransistors as Neutron Spectrum Sensors and Displace-ment Damage MonitorsE1894 Guide for Selecting Dosimetry Systems for Applica-tion in Pulsed X-Ray Sour

10、ces3. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 gain also known as the common emitter gain. Theratio of the collector current over the base current at a constantVCE.3.1.2 annealing functionthe ratio of the change in thedisplacement damage metric (as manifested in device par

11、amet-ric measurements) as a function of time following a pulse ofneutrons to the change in the residual late-time displacementdamage metric remaining at the time the imparted damageachieves quasi-equilibrium.3.1.2.1 DiscussionThis late-time quasi-equilibrium timeis sometimes set to a fixed time on t

12、he order of approximately1000 s, or it is, as in Test Method E1855, set to a displacementdamage measurement made after temperature/time stabilizingthermal anneal procedure of 80C for 2 h. Fig. 1 shows anexample of the annealing function for a 2N2907 pnp bipolartransistor with an operational current

13、of 2 mA during and afterthe irradiation. The displacement damage metric of interest isoften the reciprocal gain change in a bipolar device. Thisdamage metric is widely used since the Messenger-Sprattequation (2, 3) states that this quantity, at late time, is1This guide is under the jurisdiction of A

14、STM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved Dec. 1, 2016. Published January 2017. Originallyapproved in 1986. Last previous edition approved in 2010 as F980M 101. DOI:10.1520/F0980-16.2The bold

15、face numbers in parentheses refer to the list of references at the end ofthis standard.3For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summar

16、y page onthe ASTM website.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United StatesThis international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles f

17、or theDevelopment of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.1proportional to the 1-MeV(Si) equivalent fluence, see PracticeE722. In this case theS1G21G0D5 k (1) is the 1-MeV(Si)-equivalent fluence, k is a

18、 device-specificdisplacement damage constant referred to as the Messengerconstant, G0is the initial gain of the device, and Gis thelate-time quasi-equilibrium gain of the device. For this dam-age metric, the anneal function, AF(t), is given by:AFt! 51Gt!21G01G21G0(2)where G(t) is the gain of the dev

19、ice at a time t.3.1.2.2 DiscussionThe annealing function has typical val-ues of 2 to 10 for time periods extending out to severalthousands of seconds following irradiation; see Refs (4-10).The annealing function decreases to unity at late time, “latetime” is taken to be the time point where the Glat

20、e timequasi-equilibrium device gain was determined.3.1.3 displacement damage effectseffects induced by thenon-ionizing portion of the deposited energy during an irradia-tion. The dominant effect of displacement damage in bipolarsilicon devices is a reduction in the minority carrier lifetimeand a red

21、uction in the common-emitter current gain.3.1.4 in situ testselectrical measurements made on de-vices before, after, or during irradiation while they remain inthe immediate vicinity of the irradiation location. All rapid-annealing measurements are performed in situ because mea-surement must begin im

22、mediately following irradiation (usu-ally 250 MeV),protons have a long range in the target, the test devices must belocated outside the path of the incident proton beams in orderto avoid interference from proton-induced damage effects. Theuseful irradiation area in a spallation source is limited by

23、thelow fluence in a pulse and the fluence gradient away from thepoint where the protons impact the target. The useful irradia-tion area is typically V0(t).NOTE 4For an IC, the test circuit and parameter to be measured may be significantly different from those shown.NOTE 5A current limiting diode is

24、often used by the power supply leg to prevent photocurrent induced saturation of diagnostic equipment (15).FIG. 3 Typical Schematic of a Simple Bipolar Rapid-Annealing Test CircuitF980 1657.5 Dosimetry System:7.5.1 The neutron fluence for each exposure is measuredwith activation foils. Often a singl

25、e activation sensor such assulfur or nickel (seeTest Methods E264 and E265) can be used,once the spectrum has been determined, in accordance withreferenced guidelines.7.5.2 Gamma dosimetry for the fast-burst reactor is per-formed using CaF2:Mn. Thermoluminescent Dosimeters(TLDs) or a silicon calorim

26、eter to determine dose and PINphoto diodes or photoconducting devices (PCDs) to establishthe dose rate; see Guide E1894. Preselected fluence levels anddose rates are then obtained by irradiating at a selected reactoroutput. (Proper use of TLD systems is described in PracticesE666.)7.5.2.1 Discussion

27、LiF TLDs should not be used in reactorenvironments due to their sensitivity response to thermal-neutron-induced ionization. CaF2: Mn TLDs show very limitedresponse to ionizing dose delivered by neutrons due to theirLET-dependent response (17).7.5.3 Other dosimetry can be used for the determination o

28、fboth neutron radiation and gamma radiation levels. The cali-bration of dosimetry systems should be traceable to NISTstandards.8. Procedure8.1 Parties to the test must first establish the circumstancesof the test. As a minimum, they should establish the itemsspecified in 4.2 and consider all of the

29、possible interferencesdescribed in Section 6 when making these decisions.8.2 Prepare bias fixtures, test circuits, and test programs.8.3 Do preliminary source dosimetry, as needed, and estab-lish the dosimetry system calibration.8.4 Make pre-irradiation parameter or functionalmeasurements, or both.8

30、.5 Bias the parts as agreed upon between the parties to thetest. Irradiate to the agreed radiation level.8.6 Make measurements at the agreed times following theradiation exposure.8.7 If the preselected damage level of the device allowsadditional exposures, repeat 8.5 and 8.6, if desired.9. Report9.1

31、 As a minimum, report the following information:9.1.1 Information identifying the devices tested. All infor-mation available for device identification should be included;for example, device type, serial number, manufacturer, date lotcode, diffusion lot designation, wafer lot designation, and soforth

32、. The history of the devices being tested should berecorded. This is often captured using a “traveler” or similardocument that is associated with the device and records thehistory of the environment seen by the device since it waspurchased.9.1.2 A listing of items agreed upon between the parties tot

33、he test including all the conditions described in 4.2.9.1.3 A record of the irradiation date/time and facilityoperation number. This should include a reference back toneutron and gamma radiation field characterization data rrep-resentative of the exposure conditions. See Sections 5.4 and 5.7of Pract

34、ice E1854.9.1.4 Dosimetry records, including quantified measurementuncertainties, from the irradiation that supports a full charac-terization of the radiation environment seen by the devices.This typically involves use of both a neutron and a gammamonitor, see Section 5.8 of E1854.9.1.5 A schematic

35、of the bias circuit.9.1.6 A diagram of the physical test configuration.9.1.7 A tabulation of test parameter measurement dataincluding measurements sufficient to determine the accuracyand precision of the data system. Reference data pointing backto the instrument calibration records should also be re

36、corded.9.1.8 Bias levels numerically defined.9.1.9 Temperature information at the time of irradiation.9.1.10 Ionizing dose information.9.1.11 Quasi-equilibrium defined.10. Keywords10.1 annealing factor; annealing function; displacementdamage; integrated circuits; neutron damage; neutron degrada-tion

37、; photoconducting device; rapid annealing; semiconductordevicesREFERENCES(1) Bielejec, E., Vizkelelethy, G., Fleming, R. M., King, D. B., “Metricsfor Comparison Between Displacement Damage due to Ion Beamsand Neutron Irradiation in Silicon BJTs,” IEEE Transactions inNuclear Science, Vol 54, Issue 6,

38、 2007.(2) Messenger, G. C., Spratt, J. P., , “The Effects of Neutron Irradiation onGermanium and Silicon,” Proceedings of the IRE, June 1958.(3) Messenger, G. C.,“A Summary Review of Displacement Damagefrom High Energy Radiation in Silicon Semiconductors and Semicon-ductor Devices,” IEEE Transaction

39、s in Nuclear Science, Vol 39, Issue3, 1992.(4) Sander, H. H., and Gregory, B. L., “Transient Annealing in Semicon-ductor Devices Following Pulsed Neutron Irradiation,” IEEE Trans-actions on Nuclear Science, NS-13, No. 6, December 1966.(5) Harrity, J. W., and Mallon, C. E., Short-Term Annealing in Se

40、micon-ductor Materials and Devices,AFWL-TR-67-45,AD822283, October1967.(6) Gregory, B. L., and Sander, H. H., “Injection Dependence of TransientAnnealing in Neutron-Irradiated Silicon Devices,” IEEE Transactionson Nuclear Science, NS-14, No. 6, December 1967.(7) Harrity, J. W., Azarewicz, J. L., Lea

41、don, R. E., Colwell, J. F., andF980 166Mallon, C. E., Experimental and Theoretical Investigation of Func-tional Dependence of Rapid Annealing , AFWL-TR-71-28,AD889998, October 1971 .(8) Srour, J. R., and Curtis, O. L., Jr., Journal of Applied Physics, No.4082, 1969, p. 40.(9) Leadon, R. E., “Model f

42、or Short-TermAnnealing of Neutron Damagein P-Type Silicon,” IEEE Transactions on Nuclear Science, NS-17,No. 6, December 1970.(10) McMurray, L. R., and Messenger, G. C., “Rapid Annealing Factorfor Bipolar Silicon Devices Irradiated By Fast Neutron Pulse,” IEEETransactions on Nuclear Science, NS-28, N

43、o. 6, December 1981.(11) Griffin, P. J., King, D. B., DePriest, K. R., Cooper, P. J., and Luker,S. M., “Characterizing the Time- and Energy-Dependent Reactor n/Environment,” Journal of ASTM International,Vol 3, Issue 8,August2006.(12) Griffin, P. J., Luker, S. M., King, D. B., DePriest, K. R., Hohlf

44、elder,R. J., and Suo-Anttila, A. J., “Diamond PCD for Reactor ActiveDosimetry Applications,” IEEE Transactions on Nuclear Science,Vol 51, Dec. 2004.(13) Oldham, T. R., “Charge Collection Measurements for Heavy IonsIncident on n- and p-Type Silicon,” IEEE Transactions in NuclearScience, Vol 30, Issue

45、 6, 1983.(14) Kelly, J. G., Luera, T. F., Posey, L. D., and Williams, J. G.,“Simulation Fidelity Issues in Reaction Irradiation of ElectronicsReactor Environments,” IEEE Transactions on Nuclear Science,NS-35, No. 6, December 1988.(15) Griffin, P. J., King, D. B., and Kolb, N., “Application of Spalla

46、tionNeutron Sources in Support of Radiation Hardness Studies” NuclearInstruments and Methods in Physics Research Section A:Accelerators, Spectrometers, Detectors, and Associated Equipment,Vol 562, Issue 2, June 2006 .(16) Wrobel, T. F., and Evans, D. C., “Rapid Annealing in AdvancedBipolar Microcirc

47、uits,” IEEE Transactions, on Nuclear Science,NS-29, No. 6, December 1982.(17) DePriest, K. R., Griffin, P. J., “Neutron Contribution to CaF2:MnThermoluminescent Dosimeter Responses in Mixed (n,)Environments,”IEEE Transactions in Nuclear Science, Vol 50, Issue6, 2003.ASTM International takes no posit

48、ion respecting the validity of any patent rights asserted in connection with any item mentionedin this standard. Users of this standard are expressly advised that determination of the validity of any such patent rights, and the riskof infringement of such rights, are entirely their own responsibilit

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