ASTM F980-2010e1 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火的标准指南》.pdf

《ASTM F980-2010e1 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火的标准指南》.pdf》由会员分享，可在线阅读，更多相关《ASTM F980-2010e1 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火的标准指南》.pdf（7页珍藏版）》请在麦多课文档分享上搜索。

1、Designation: F980 101Standard Guide forMeasurement of Rapid Annealing of Neutron-InducedDisplacement Damage in Silicon Semiconductor Devices1This standard is issued under the fixed designation F980; the number immediately following the designation indicates the year of originaladoption or, in the ca

2、se of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.Asuperscriptepsilon () indicates an editorial change since the last revision or reapproval.1NOTEFigure 2 was corrected editorially in October 2014.1. Scope1.1 This guide defines the requirements an

3、d procedures fortesting silicon discrete semiconductor devices and integratedcircuits for rapid-annealing effects from displacement damageresulting from neutron radiation. This test will produce degra-dation of the electrical properties of the irradiated devices andshould be considered a destructive

4、 test. Rapid annealing ofdisplacement damage is usually associated with bipolar tech-nologies.1.1.1 Heavy ion beams can also be used to characterizedisplacement damage annealing (1)2, but ion beams havesignificant complications in the interpretation of the resultingdevice behavior due to the associa

5、ted ionizing dose. The use ofpulsed ion beams as a source of displacement damage is notwithin the scope of this standard.1.2 The values stated in SI units are to be regarded asstandard. No other units of measurement are included in thisstandard.1.3 This standard does not purport to address all of th

6、esafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to consult andestablish appropriate safety and health practices and deter-mine the applicability of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:3E264 Test Method

7、for Measuring Fast-Neutron ReactionRates by Radioactivation of NickelE265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32E666 Practice for Calculating Absorbed Dose From Gammaor X RadiationE720 Guide for Selection and Use of Neutron Sensors forDeter

8、mining Neutron Spectra Employed in Radiation-Hardness Testing of ElectronicsE721 Guide for Determining Neutron Energy Spectra fromNeutron Sensors for Radiation-Hardness Testing of Elec-tronicsE722 Practice for Characterizing Neutron Fluence Spectra inTerms of an Equivalent Monoenergetic Neutron Flue

9、ncefor Radiation-Hardness Testing of ElectronicsE1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic PartsE1855 Test Method for Use of 2N2222A Silicon BipolarTransistors as Neutron Spectrum Sensors and Displace-ment Damage MonitorsE1894 Guide for Selectin

10、g Dosimetry Systems for Applica-tion in Pulsed X-Ray SourcesF1032 Guide for Measuring Time-Dependent Total-DoseEffects in Semiconductor Devices Exposed to PulsedIonizing Radiation (Withdrawn 1994)43. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 annealing functionthe ratio of t

11、he change in thedisplacement damage metric (as manifested in device paramet-ric measurements) as a function of time following a pulse ofneutrons and the change in the residual late-time displacementdamage metric remaining at the time the initial damageachieves quasi equilibrium.3.1.1.1 DiscussionThi

12、s late-time quasi-equilibrium timeis sometimes set to a fixed time on the order of approximately1000 s, or it is, as in Test Method E1855, set to a displacementdamage measurement made after low temperature thermalstabilizing anneal procedure of 80C for 2 h. Fig. 1 shows anexample of the annealing fu

13、nction for a 2N2907 pnp bipolar1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved Dec. 1, 2010. Published January 2011. Originallyapproved in 1986. Last previ

14、ous edition approved in 2003 as F980M 96(2003).DOI: 10.1520/F0980-10E01.2The boldface numbers in parentheses refer to the list of references at the end ofthis standard.3For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual

15、 Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.4The last approved version of this historical standard is referenced onwww.astm.org.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United St

16、ates1transistor with an operational current of 2 mA during and afterthe irradiation. The displacement damage metric of interest isoften the reciprocal gain change in a bipolar device. Thisdamage metric is widely used since the Messenger-Sprattequation (2,3) states that this quantity, at late time, i

17、s propor-tional to the 1-MeV(Si) equivalent fluence, see Practice E722.In this case theS1G21G0D5 k (1) is the 1-MeV(Si)-equivalent fluence, k is a device-specificdisplacement damage constant referred to as the Messengerconstant, G0is the initial gain of the device, and Gis thelate-time quasi-equilib

18、rium gain of the device. For this dam-age metric, the anneal function, AF(t), is given by:AFt! 51Gt!21G01G21G0(2)where G(t) is the gain of the device at a time t.3.1.1.2 DiscussionThe annealing function has typical val-ues of 2 to 10 for time periods extending out to severalthousands of seconds foll

19、owing irradiation; see Refs (4, 5, 6, 7,8, 9, 10). The annealing function decreases to unity at late time,“late time” is taken to be the time point where the Glate timequasi-equilibrium device gain was determined.3.1.2 displacement damage effectseffects induced by thenon-ionizing portion of the depo

20、sited energy during an irradia-tion. The non-ionizing energy results in lattice displacementsand the generation of phonons in a lattice. Displacementdamage effects are commonly induced by neutrons or heavyion irradiation. There is a displacement component to highenergy electron and photon irradiatio

21、ns. The dominant effect ofdisplacement damage in bipolar silicon devices is a reductionin the minority carrier lifetime and a reduction in the common-emitter current gain.3.1.3 in situ testselectrical measurements made on de-vices before, after, or during irradiation while they remain inthe immediat

22、e vicinity of the irradiation location. All rapid-annealing measurements are performed in situ because mea-surement must begin immediately following irradiation (usu-ally 250 MeV),protons have a long range in the target, the test devices must belocated outside the path of the incident proton beams i

23、n orderto avoid interference from proton-induced damage effects. Theuseful irradiation area in a spallation source is limited by thelow fluence in a pulse and the fluence gradient away from thepoint where the protons impact the target. The useful irradia-tion area is typically V0(t).NOTE 4For an IC,

24、 the test circuit and parameter to be measured may be significantly different from those shown.NOTE 5A current limiting diode is often used by the power supply leg to prevent photocurrent induced saturation of diagnostic equipment (15).FIG. 3 Typical Schematic of a Simple Bipolar Rapid-Annealing Tes

25、t CircuitF980 1016REFERENCES(1) Bielejec, E., Vizkelelethy, G., Fleming, R. M., King, D. B., “Metricsfor Comparison Between Displacement Damage due to Ion Beamsand Neutron Irradiation in Silicon BJTs,” IEEE Transactions inNuclear Science, Vol 54, Issue 6, 2007.(2) Messenger, G. C., Spratt, J. P., ,

26、“The Effects of Neutron Irradiation onGermanium and Silicon,” Proceedings of the IRE, June 1958.(3) Messenger, G. C., “A Summary Review of Displacement Damagefrom High Energy Radiation in Silicon Semiconductors and Semicon-ductor Devices,” IEEE Transactions in Nuclear Science, Vol 39, Issue3, 1992.(

27、4) Sander, H. H., and Gregory, B. L., “Transient Annealing in Semicon-ductor Devices Following Pulsed Neutron Irradiation,” IEEE Trans-actions on Nuclear Science, NS-13, No. 6, December 1966.(5) Harrity, J. W., and Mallon, C. E., Short-Term Annealing in Semicon-ductor Materials and Devices,AFWL-TR-6

28、7-45,AD822283, October1967.(6) Gregory, B. L., and Sander, H. H., “Injection Dependence of TransientAnnealing in Neutron-Irradiated Silicon Devices,” IEEE Transactionson Nuclear Science, NS-14, No. 6, December 1967.(7) Harrity, J. W., Azarewicz, J. L., Leadon, R. E., Colwell, J. F., andMallon, C. E.

29、, Experimental and Theoretical Investigation of Func-tional Dependence of Rapid Annealing , AFWL-TR-71-28,AD889998, October 1971 .(8) Srour, J. R., and Curtis, O. L., Jr., Journal of Applied Physics, No.4082, 1969, p. 40.(9) Leadon, R. E., “Model for Short-TermAnnealing of Neutron Damagein P-Type Si

30、licon,” IEEE Transactions on Nuclear Science, NS-17,No. 6, December 1970.(10) McMurray, L. R., and Messenger, G. C., “Rapid Annealing Factorfor Bipolar Silicon Devices Irradiated By Fast Neutron Pulse,” IEEETransactions on Nuclear Science, NS-28, No. 6, December 1981.(11) Griffin, P. J., King, D. B.

31、, DePriest, K. R., Cooper, P. J., and Luker,S. M., “Characterizing the Time- and Energy-Dependent Reactor n/Environment,” Journal of ASTM International,Vol 3, Issue 8,August2006.(12) Griffin, , P. J., Luker, S. M., King, D. B., DePriest, K. R., Hohlfelder,R. J., and Suo-Anttila, A. J., “Diamond PCD

32、for Reactor ActiveDosimetry Applications,” IEEE Transactions on Nuclear Science,Vol 51, Dec. 2004.(13) Oldham, T. R., “Charge Collection Measurements for Heavy IonsIncident on n- and p-Type Silicon,” IEEE Transactions in NuclearScience, Vol 30, Issue 6, 1983.(14) Kelly, J. G., Luera, T. F., Posey, L

33、. D., and Williams, J. G.,“Simulation Fidelity Issues in Reaction Irradiation of ElectronicsReactor Environments,” IEEE Transactions on Nuclear Science,NS-35, No. 6, December 1988.(15) Griffin, P. J., King, D. B., and Kolb, N., “Application of SpallationNeutron Sources in Support of Radiation Hardne

34、ss Studies” NuclearInstruments and Methods in Physics Research Section A:Accelerators, Spectrometers, Detectors, and Associated Equipment,Vol 562, Issue 2, June 2006 .(16) Wrobel, T. F., and Evans, D. C., “Rapid Annealing in AdvancedBipolar Microcircuits,” IEEE Transactions, on Nuclear Science,NS-29

35、, No. 6, December 1982.(17) DePriest, K. R., Griffin, P. J., “Neutron Contribution to CaF2:MnThermoluminescent Dosimeter Responses in Mixed (n,)Environments,” IEEE Transactions in Nuclear Science, Vol 50, Issue6, 2003.ASTM International takes no position respecting the validity of any patent rights

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