ASTM F980-2010 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火用标准指南》.pdf

《ASTM F980-2010 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火用标准指南》.pdf》由会员分享，可在线阅读，更多相关《ASTM F980-2010 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices《测量硅半导体器件中中子感应位移故障的快速退火用标准指南》.pdf（7页珍藏版）》请在麦多课文档分享上搜索。

1、Designation: F980 10Standard Guide forMeasurement of Rapid Annealing of Neutron-InducedDisplacement Damage in Silicon Semiconductor Devices1This standard is issued under the fixed designation F980; the number immediately following the designation indicates the year of originaladoption or, in the cas

2、e of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A superscriptepsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide defines the requirements and procedures fortesting silicon discrete semiconducto

3、r devices and integratedcircuits for rapid-annealing effects from displacement damageresulting from neutron radiation. This test will produce degra-dation of the electrical properties of the irradiated devices andshould be considered a destructive test. Rapid annealing ofdisplacement damage is usual

4、ly associated with bipolar tech-nologies.1.1.1 Heavy ion beams can also be used to characterizedisplacement damage annealing (1)2, but ion beams havesignificant complications in the interpretation of the resultingdevice behavior due to the associated ionizing dose. The use ofpulsed ion beams as a so

5、urce of displacement damage is notwithin the scope of this standard.1.2 The values stated in SI units are to be regarded asstandard. No other units of measurement are included in thisstandard.1.3 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It

6、 is theresponsibility of the user of this standard to consult andestablish appropriate safety and health practices and deter-mine the applicability of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:3E264 Test Method for Measuring Fast-Neutron ReactionRates by Radioacti

7、vation of NickelE265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32E666 Practice for CalculatingAbsorbed Dose From Gammaor X RadiationE720 Guide for Selection and Use of Neutron Sensors forDetermining Neutron Spectra Employed in Radiation-Hardness

8、Testing of ElectronicsE721 Guide for Determining Neutron Energy Spectra fromNeutron Sensors for Radiation-Hardness Testing of Elec-tronicsE722 Practice for Characterizing Neutron Fluence Spectrain Terms of an Equivalent Monoenergetic Neutron Fluencefor Radiation-Hardness Testing of ElectronicsE1854

9、Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic PartsE1855 Test Method for Use of 2N2222A Silicon BipolarTransistors as Neutron Spectrum Sensors and Displace-ment Damage MonitorsE1894 Guide for Selecting Dosimetry Systems for Applica-tion in Pulsed X-Ray S

10、ourcesF1032 Guide for Measuring Time-Dependent Total-DoseEffects in Semiconductor Devices Exposed to PulsedIonizing Radiation (Discontinued 1994)43. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 annealing functionthe ratio of the change in thedisplacement damage metric (as mani

11、fested in device paramet-ric measurements) as a function of time following a pulse ofneutrons and the change in the residual late-time displacementdamage metric remaining at the time the initial damageachieves quasi equilibrium.3.1.1.1 DiscussionThis late-time quasi-equilibrium timeis sometimes set

12、to a fixed time on the order of approximately1000 s, or it is, as in Test Method E1855, set to a displacementdamage measurement made after low temperature thermalstabilizing anneal procedure of 80C for 2 h. Fig. 1 shows anexample of the annealing function for a 2N2907 pnp bipolartransistor with an o

13、perational current of 2 mA during and afterthe irradiation. The displacement damage metric of interest isoften the reciprocal gain change in a bipolar device. This1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nucl

14、ear and SpaceRadiation Effects.Current edition approved Dec. 1, 2010. Published January 2011. Originallyapproved in 1986. Last previous edition approved in 2003 as F980M 96(2003).DOI: 10.1520/F0980-10.2The boldface numbers in parentheses refer to the list of references at the end ofthis standard.3Fo

15、r referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.4Withdrawn. The last approved version of this historical standar

16、d is referencedon www.astm.org.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.damage metric is widely used since the Messenger-Sprattequation (2,3) states that this quantity, at late time, is propor-tional to the 1-MeV(Si) equivalen

17、t fluence, see Practice E722.In this case theS1G21G0D5 kF (1)F is the 1-MeV(Si)-equivalent fluence, k is a device-specificdisplacement damage constant referred to as the Messengerconstant, G0is the initial gain of the device, and Gis thelate-time quasi-equilibrium gain of the device. For this damage

18、metric, the anneal function, AF(t), is given by:AFt! 51Gt!21G01G21G0(2)where G(t) is the gain of the device at a time t.3.1.1.2 DiscussionThe annealing function has typical val-ues of 2 to 10 for time periods extending out to severalthousands of seconds following irradiation; see Refs (4, 5, 6, 7,8,

19、 9, 10). The annealing function decreases to unity at late time,“late time” is taken to be the time point where the Glate timequasi-equilibrium device gain was determined.3.1.2 displacement damage effectseffects induced by thenon-ionizing portion of the deposited energy during an irradia-tion. The n

20、on-ionizing energy results in lattice displacementsand the generation of phonons in a lattice. Displacementdamage effects are commonly induced by neutrons or heavyion irradiation. There is a displacement component to highenergy electron and photon irradiations. The dominant effect ofdisplacement dam

21、age in bipolar silicon devices is a reductionin the minority carrier lifetime and a reduction in the common-emitter current gain.3.1.3 in situ testselectrical measurements made on de-vices before, after, or during irradiation while they remain inthe immediate vicinity of the irradiation location. Al

22、l rapid-annealing measurements are performed in situ because mea-surement must begin immediately following irradiation (usu-ally 250 MeV),protons have a long range in the target, the test devices must belocated outside the path of the incident proton beams in orderto avoid interference from proton-i

23、nduced damage effects. Theuseful irradiation area in a spallation source is limited by thelow fluence in a pulse and the fluence gradient away from thepoint where the protons impact the target. The useful irradia-tion area is typically V0(t).NOTE 4For an IC, the test circuit and parameter to be meas

24、ured may be significantly different from those shown.NOTE 5A current limiting diode is often used by the power supply leg to prevent photocurrent induced saturation of diagnostic equipment (15).FIG. 3 Typical Schematic of a Simple Bipolar Rapid-Annealing Test CircuitF980 10610. Keywords10.1 annealin

25、g factor; annealing function; displacementdamage; integrated circuits; neutron damage; neutron degrada-tion; photoconducting device; rapid annealing; semiconductordevicesREFERENCES(1) Bielejec, E., Vizkelelethy, G., Fleming, R. M., King, D. B., “Metricsfor Comparison Between Displacement Damage due

26、to Ion Beams andNeutron Irradiation in Silicon BJTs,” IEEE Transactions in NuclearScience, Vol 54, Issue 6, 2007.(2) Messenger, G. C., Spratt, J. P., , “The Effects of Neutron Irradiationon Germanium and Silicon,” Proceedings of the IRE, June 1958.(3) Messenger, G. C., “A Summary Review of Displacem

27、ent Damagefrom High Energy Radiation in Silicon Semiconductors and Semicon-ductor Devices,” IEEE Transactions in Nuclear Science, Vol 39,Issue 3, 1992.(4) Sander, H. H., and Gregory, B. L., “Transient Annealing in Semicon-ductor Devices Following Pulsed Neutron Irradiation,” IEEE Trans-actions on Nu

28、clear Science, NS-13, No. 6, December 1966.(5) Harrity, J. W., and Mallon, C. E., Short-Term Annealing in Semicon-ductor Materials and Devices, AFWL-TR-67-45, AD822283, October1967.(6) Gregory, B. L., and Sander, H. H., “Injection Dependence of TransientAnnealing in Neutron-Irradiated Silicon Device

29、s,” IEEE Transac-tions on Nuclear Science, NS-14, No. 6, December 1967.(7) Harrity, J. W., Azarewicz, J. L., Leadon, R. E., Colwell, J. F., andMallon, C. E., Experimental and Theoretical Investigation of Func-tional Dependence of Rapid Annealing, AFWL-TR-71-28, AD889998,October 1971.(8) Srour, J. R.

30、, and Curtis, O. L., Jr., Journal of Applied Physics, No.4082, 1969, p. 40.(9) Leadon, R. E., “Model for Short-Term Annealing of Neutron Damagein P-Type Silicon,” IEEE Transactions on Nuclear Science, NS-17,No. 6, December 1970.(10) McMurray, L. R., and Messenger, G. C., “RapidAnnealing Factor forBi

31、polar Silicon Devices Irradiated By Fast Neutron Pulse,” IEEETransactions on Nuclear Science, NS-28, No. 6, December 1981.(11) Griffin, P. J., King, D. B., DePriest, K. R., Cooper, P. J., and Luker,S. M., “Characterizing the Time- and Energy-Dependent Reactor n/gEnvironment,” Journal of ASTM Interna

32、tional, Vol 3, Issue 8,August 2006.(12) Griffin, , P. J., Luker, S. M., King, D. B., DePriest, K. R., Hohlfelder,R. J., and Suo-Anttila, A. J., “Diamond PCD for Reactor ActiveDosimetry Applications,” IEEE Transactions on Nuclear Science,Vol 51, Dec. 2004.(13) Oldham, T. R., “Charge Collection Measur

33、ements for Heavy IonsIncident on n- and p-Type Silicon,” IEEE Transactions in NuclearScience, Vol 30, Issue 6, 1983.(14) Kelly, J. G., Luera, T. F., Posey, L. D., and Williams, J. G.,“Simulation Fidelity Issues in Reaction Irradiation of ElectronicsReactor Environments,” IEEE Transactions on Nuclear

34、 Science,NS-35, No. 6, December 1988.(15) Griffin, P. J., King, D. B., and Kolb, N., “Application of SpallationNeutron Sources in Support of Radiation Hardness Studies” NuclearInstruments and Methods in Physics Research Section A: Accelera-tors, Spectrometers, Detectors, and Associated Equipment, Vo

35、l 562,Issue 2, June 2006.(16) Wrobel, T. F., and Evans, D. C., “Rapid Annealing in AdvancedBipolar Microcircuits,” IEEE Transactions, on Nuclear Science,NS-29, No. 6, December 1982.(17) DePriest, K. R., Griffin, P. J., “Neutron Contribution to CaF2:MnThermoluminescent Dosimeter Responses in Mixed (n

36、,g) Environ-ments,” IEEE Transactions in Nuclear Science, Vol 50, Issue 6,2003.ASTM International takes no position respecting the validity of any patent rights asserted in connection with any item mentionedin this standard. Users of this standard are expressly advised that determination of the vali

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40、opies) of this standard may be obtained by contacting ASTM at the aboveaddress or at 610-832-9585 (phone), 610-832-9555 (fax), or serviceastm.org (e-mail); or through the ASTM website(www.astm.org). Permission rights to photocopy the standard may also be secured from the ASTM website (www.astm.org/COPYRIGHT/).F980 107