ASTM E2244-2011(2018) Standard Test Method for In-Plane Length Measurements of Thin Reflecting Films Using an Optical Interferometer.pdf
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1、Designation: E2244 11 (Reapproved 2018)Standard Test Method forIn-Plane Length Measurements of Thin, Reflecting FilmsUsing an Optical Interferometer1This standard is issued under the fixed designation E2244; the number immediately following the designation indicates the year oforiginal adoption or,
2、in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This test method covers a procedure for measuringin-plane lengths (including defl
3、ections) of patterned thin films.It applies only to films, such as found in microelectromechani-cal systems (MEMS) materials, which can be imaged using anoptical interferometer, also called an interferometric micro-scope.1.2 There are other ways to determine in-plane lengths.Using the design dimensi
4、ons typically provides more precisein-plane length values than using measurements taken with anoptical interferometric microscope. (Interferometric measure-ments are typically more precise than measurements taken withan optical microscope.) This test method is intended for usewhen interferometric me
5、asurements are preferred over usingthe design dimensions (for example, when measuring in-planedeflections and when measuring lengths in an unproven fabri-cation process).1.3 This test method uses a non-contact optical interfero-metric microscope with the capability of obtaining topographi-cal 3-D da
6、ta sets. It is performed in the laboratory.1.4 The maximum in-plane length measured is determinedby the maximum field of view of the interferometric micro-scope at the lowest magnification. The minimum deflectionmeasured is determined by the interferometric microscopespixel-to-pixel spacing at the h
7、ighest magnification.1.5 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety, health, and environmental practices and deter-mine the applicability of regulatory lim
8、itations prior to use.1.6 This international standard was developed in accor-dance with internationally recognized principles on standard-ization established in the Decision on Principles for theDevelopment of International Standards, Guides and Recom-mendations issued by the World Trade Organizatio
9、n TechnicalBarriers to Trade (TBT) Committee.2. Referenced Documents2.1 ASTM Standards:2E2245 Test Method for Residual Strain Measurements ofThin, Reflecting Films Using an Optical InterferometerE2246 Test Method for Strain Gradient Measurements ofThin, Reflecting Films Using an Optical Interferomet
10、erE2444 Terminology Relating to Measurements Taken onThin, Reflecting FilmsE2530 Practice for Calibrating the Z-Magnification of anAtomic Force Microscope at Subnanometer DisplacementLevels Using Si(111) Monatomic Steps (Withdrawn2015)32.2 SEMI Standard:4MS2 Test Method for Step Height Measurements
11、of ThinFilms3. Terminology3.1 Definitions:3.1.1 The following terms can be found in TerminologyE2444.3.1.2 2-D data trace, na two-dimensional group of pointsthat is extracted from a topographical 3-D data set and that isparallel to the xz-oryz-plane of the interferometric micro-scope.3.1.3 3-D data
12、set, na three-dimensional group of pointswith a topographical z-value for each (x, y) pixel locationwithin the interferometric microscopes field of view.3.1.4 anchor, nin a surface-micromachining process, theportion of the test structure where a structural layer is inten-tionally attached to its und
13、erlying layer.1This test method is under the jurisdiction of ASTM Committee E08 on Fatigueand Fracture and is the direct responsibility of Subcommittee E08.05 on CyclicDeformation and Fatigue Crack Formation.Current edition approved May 1, 2018. Published May 2018. Originallyapproved in 2002. Last p
14、revious edition approved in 2011 as E2244 111. DOI:10.1520/E224411R18.2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM
15、 website.3The last approved version of this historical standard is referenced onwww.astm.org.4For referenced Semiconductor Equipment and Materials International (SEMI)standards, visit the SEMI website, www.semi.org.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken,
16、PA 19428-2959. United StatesThis international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for theDevelopment of International Standards, Guides and Recommendations issued by the World Trade Organization
17、 Technical Barriers to Trade (TBT) Committee.13.1.5 anchor lip, nin a surface-micromachining process,the freestanding extension of the structural layer of interestaround the edges of the anchor to its underlying layer.3.1.5.1 DiscussionIn some processes, the width of theanchor lip may be zero.3.1.6
18、bulk micromachining, adja MEMS fabrication pro-cess where the substrate is removed at specified locations.3.1.7 cantilever, na test structure that consists of a free-standing beam that is fixed at one end.3.1.8 fixed-fixed beam, na test structure that consists of afreestanding beam that is fixed at
19、both ends.3.1.9 in-plane length (or deflection) measurement, ntheexperimental determination of the straight-line distance be-tween two transitional edges in a MEMS device.3.1.9.1 DiscussionThis length (or deflection) measure-ment is made parallel to the underlying layer (or the xy-planeof the interf
20、erometric microscope).3.1.10 interferometer, na non-contact optical instrumentused to obtain topographical 3-D data sets.3.1.10.1 DiscussionThe height of the sample is measuredalong the z-axis of the interferometer. The x-axis is typicallyaligned parallel or perpendicular to the transitional edges t
21、o bemeasured.3.1.11 MEMS, adjmicroelectromechanical systems.3.1.12 microelectromechanical systems, adjin general,this term is used to describe micron-scale structures, sensors,actuators, and technologies used for their manufacture (such as,silicon process technologies), or combinations thereof.3.1.1
22、3 sacrificial layer, na single thickness of materialthat is intentionally deposited (or added) then removed (inwhole or in part) during the micromachining process, to allowfreestanding microstructures.3.1.14 structural layer, na single thickness of materialpresent in the final MEMS device.3.1.15 sub
23、strate, nthe thick, starting material (often singlecrystal silicon or glass) in a fabrication process that can be usedto build MEMS devices.3.1.16 support region, nin a bulk-micromachiningprocess, the area that marks the end of the suspended structure.3.1.17 surface micromachining, adja MEMS fabrica
24、tionprocess where micron-scale components are formed on asubstrate by the deposition (or addition) and removal (in wholeor in part) of structural and sacrificial layers.3.1.18 test structure, na component (such as, a fixed-fixedbeam or cantilever) that is used to extract information (such as,the res
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