IEEE 2700-2014 en Sensor Performance Parameter Definitions《传感器性能参数定义》.pdf

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1、 IEEE Standard for Sensor Performance Parameter Definitions Sponsored by the Microelectromechanical Systems Standards Development Committee IEEE 3 Park Avenue New York, NY 10016-5997 USA IEEE Electron Devices Society IEEE Std 2700-2014 IEEE Std 2700-2014 IEEE Standard for Sensor Performance Paramete

2、r Definitions Sponsor Microelectromechanical Systems Standards Development Committee of the IEEE Electron Devices Society Approved 12 June 2014 IEEE-SA Standards Board Abstract: A common framework for sensor performance specification terminology, units, conditions and limits is provided. Specificall

3、y, the accelerometer, magnetometer, gyrometer/gyroscope, barometer/pressure sensors, hygrometer/humidity sensors, temperature sensors, ambient light sensors, and proximity sensors are discussed. Keywords: ambient light, accelerometer, gyroscope, humidity, IEEE 2700, magnetometer, MEMS, microelectrom

4、echanical proximity, sensors systems, pressure, temperature, terminology The Institute of Electrical and Electronics Engineers, Inc. 3 Park Avenue, New York, NY 10016-5997, USA Copyright 2014 by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved. Published 20 August 2014

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33、 rights, and the risk of infringement of such rights, is entirely their own responsibility. Further information may be obtained from the IEEE Standards Association. Copyright 2014 IEEE. All rights reserved. vi Participants At the time this standard was submitted to the IEEE-SA, the P2700 Working Gro

34、up had the following membership: Ken Foust, Chair Carlos Puig, Vice Chair Michael Gaitan, Secretary Freescale Semiconductor, Inc Intel Corporation MEMS Industry Group National Instiute of Standards and Technology (NIST) Nokia Qualcomm Incorporated Renesas Electronics Corporation The P2700 Working Gr

35、oup gratefully acknowledges the contributions of the following participants. Without their assistance and dedication, this standard would not have been completed. Ken Foust Michael Gaitan Karen Lightman Carlos Puig Mike Stanley Len Sheynblat Steve Whalley The following members of the entity ballotin

36、g committee voted on this standard. Balloters may have voted for approval, disapproval, or abstention. Freescale Semiconductor, Inc Intel Corporation MEMS Industry Group National Instiute of Standards and Technology (NIST) Nokia Qualcomm Incorporated Renesas Electronics Corporation When the IEEE-SA

37、Standards Board approved this standard on 12 June 2014, it had the following membership: John Kulick, Chair Jon Walter Rosdahl, Vice Chair Richard H. Hulett, Past Chair Konstantinos Karachalios, Secretary Peter Balma Farooq Bari Ted Burse Clint Chaplain Stephen Dukes Jean-Phillippe Faure Gary Hoffma

38、n Michael Janezic Jeffrey Katz Joseph L. Koepfinger* David Law Hung Ling Oleg Logvinov Ted Olsen Glenn Parsons Ron Peterson Adrian Stephens Peter Sutherland Yatin Trivedi Phil Winston Don Wright Yu Yuan *Member Emeritus Also included are the following nonvoting IEEE-SA Standards Board liaisons: Rich

39、ard DeBlasio, DOE Representative Michael Janezic, NIST Representative Michelle Turner IEEE-SA Content Publishing Jonathan Goldberg IEEE-SA Technical Standards Community Introduction This introduction is not part of IEEE Std 2700-2014, IEEE Standard for Sensor Performance Parameter Definitions. Micro

40、electromechanical systems (MEMS) have become a key enabling technology for many of todays high-technology products, including automotive sensors, smart phones, and the new consumer market of wearable fitness devices. MEMS are also supporting new breakthroughs in areas such as green energy and portab

41、le medical diagnostic and treatment technologies. These factors make them a keystone for advanced manufacturing, jobs, and technology innovation. The MEMS Industry Group (MIG) and its member MEMS companies, large and small, have recognized MEMS testing as a growing industrial issue and a pre-competi

42、tive place in the value chain where cooperation would benefit all competitors and customers. MIG has documented that the lack of testing standards attributes to increasing costs of MEMS device manufacturing. Today, the cost to test MEMS devices is from a third to as much as two thirds of the total m

43、anufacturing costs. Often, the most complex and promising devices have the highest testing costs. The industry group sees an urgent need to standardize MEMS testing whose impact is only increasing as a direct result of advances in MEMS innovation. IEEE Std 2700 addresses the issue of non-uniformity

44、in MEMS sensor data sheets, by defining the sensor performance parameters that are typically used in MEMS sensor technologies. Potential customers use data sheets to select the devices that they will design into their systems. Potential customers use data sheets to compare the performance of devices

45、 from multiple manufacturers. Data sheets contain specifications of the device performance, the package design, operating temperature, input and output signals, etc. Even though the data sheets may not reflect the type of testing that goes into qualification or production test, they should not confl

46、ict with those measurements. This standard is expected to be the first in many that will follow. The performance parameters defined in this standard will each need standard testing protocols to ensure that device performance data measured by any party (buyer or seller) is in agreement and within a d

47、etermined uncertainty. Contents 1. Overview 1 1.1 Scope . 1 1.2 Objective 1 1.3 Purpose 1 1.4 Sensors discussed in this standard . 2 2. Normative references 3 3. Definitions, acronyms, and abbreviations 3 3.1 Definitions . 3 3.2 Acronyms and abbreviations . 4 4. Conventions 5 4.1 Symbols and equatio

48、ns 5 4.2 Measurement unit conversion table . 8 5. Motivation 8 6. Interpretation guideline 9 7. Accelerometer 10 7.1 Full scale range 10 7.2 Digital bit depth . 10 7.3 Zero-g offset 11 7.4 Zero-g offset temperature coefficient 11 7.5 Sensitivity 11 7.6 Sensitivity temperature coefficient 12 7.7 Nois

49、e 12 7.8 Current Consumption 13 7.9 Output data rate . 13 7.10 Filter 3 dB cutoff . 13 7.11 Internal oscillator tolerance . 14 7.12 Cross-axis sensitivity . 14 7.13 Integral non-linearity . 14 7.14 Transition time . 15 7.15 Data ready delay 16 8. Magnetometer . 16 8.1 Full scale range 17 8.2 Digital bit depth . 17 8.3 Offset at zero magnetic field 17 8.4 Offset temperature coefficient . 18 8.5 Sensitivity 18 8.6 Sensitivity temperature coefficient 18 8.7 Noise 19 8.8 Current consumption . 19 8.9 Output data rate . 20 8.10 Filter 3 dB cutoff . 20 8.11 Internal oscillator tole