SANS 62226-2-1-2006 Exposure to electric or magnetic fields in the low and intermediate frequency range - Methods for calculating the current density and internal electric field inmag.pdf

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1、 Collection of SANS standards in electronic format (PDF) 1. Copyright This standard is available to staff members of companies that have subscribed to the complete collection of SANS standards in accordance with a formal copyright agreement. This document may reside on a CENTRAL FILE SERVER or INTRA

2、NET SYSTEM only. Unless specific permission has been granted, this document MAY NOT be sent or given to staff members from other companies or organizations. Doing so would constitute a VIOLATION of SABS copyright rules. 2. Indemnity The South African Bureau of Standards accepts no liability for any

3、damage whatsoever than may result from the use of this material or the information contain therein, irrespective of the cause and quantum thereof. ISBN 0-626-18911-X SANS 62226-2-1:2006Edition 1 IEC 62226-2-1:2004Edition 1SOUTH AFRICAN NATIONAL STANDARD Exposure to electric or magnetic fields in the

4、 low and intermediate frequency range Methods for calculating the current density and internal electric field induced in the human body Part 2-1: Exposure to magnetic fields 2D models This national standard is the identical implementation of IEC 62226-2-1:2004 and is adopted with the permission of t

5、he International Electrotechnical Commission. Published by Standards South Africa 1 dr lategan road groenkloof private bag x191 pretoria 0001 tel: 012 428 7911 fax: 012 344 1568 international code + 27 12 www.stansa.co.za Standards South Africa SANS 62226-2-1:2006 Edition 1 IEC 62226-2-1:2004 Editio

6、n 1 Table of changes Change No. Date Scope National foreword This South African standard was approved by National Committee StanSA TC 73, Electromagnetic compatibility, in accordance with procedures of Standards South Africa, in compliance with annex 3 of the WTO/TBT agreement. This part of SANS 622

7、26-2 was published in December 2006.NORME INTERNATIONALECEIIECINTERNATIONAL STANDARD 62226-2-1Premire ditionFirst edition2004-11Exposition aux champs lectriques ou magntiques basse et moyenne frquence Mthodes de calcul des densits de courant induit et des champs lectriques induits dans le corps huma

8、in Partie 2-1: Exposition des champs magntiques Modles 2D Exposure to electric or magnetic fields in the low and intermediate frequency range Methods for calculating the current density and internal electric field induced in the human body Part 2-1: Exposure to magnetic fields 2D models Pour prix, v

9、oir catalogue en vigueur For price, see current catalogue IEC 2004 Droits de reproduction rservs Copyright - all rights reserved Aucune partie de cette publication ne peut tre reproduite ni utilise sous quelque forme que ce soit et par aucun procd, lectronique ou mcanique, y compris la photocopie et

10、 les microfilms, sans laccord crit de lditeur. No part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from the publisher. International Electrotechnical Commission, 3, rue de

11、 Varemb, PO Box 131, CH-1211 Geneva 20, SwitzerlandTelephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmailiec.ch Web: www.iec.ch CODE PRIX PRICE CODE XA Commission Electrotechnique InternationaleInternational Electrotechnical Commission SANS 62226-2-1:2006This s tandard may only be used

12、 and printed by approved subscription and freemailing clients of the SABS .62226-2-1 IEC:2004 3 CONTENTS FOREWORD.9 INTRODUCTION.13 1 Scope 15 2 Analytical models .15 2.1 General .15 2.2 Basic analytical models for uniform fields .17 3 Numerical models.19 3.1 General information about numerical mode

13、ls19 3.2 2D models General approach21 3.3 Conductivity of living tissues23 3.4 2D Models Computation conditions .25 3.5 Coupling factor for non-uniform magnetic field25 3.6 2D Models Computation results.27 4 Validation of models .31 Annex A (normative) Disk in a uniform field 33 Annex B (normative)

14、Disk in a field created by an infinitely long wire.39 Annex C (normative) Disk in a field created by 2 parallel wires with balanced currents 55 Annex D (normative) Disk in a magnetic field created by a circular coil .77 Annex E (informative) Simplified approach of electromagnetic phenomena101 Annex

15、F (informative) Analytical calculation of magnetic field created by simple induction systems: 1 wire, 2 parallel wires with balanced currents and 1 circular coil105 Annex G (informative) Equation and numerical modelling of electromagnetic phenomena for a typical structure: conductive disk in electro

16、magnetic field.109 Bibliography .113 Figure 1 Conducting disk in a uniform magnetic flux density17 Figure 2 Finite elements meshing (2ndorder triangles) of a disk, and detail 21 Figure 3 Conducting disk in a non-uniform magnetic flux density.23 Figure 4 Variation with distance to the source of the c

17、oupling factor for non-uniform magnetic field, K, for the three magnetic field sources (disk radius R = 100 mm) 29 Figure A.1 Current density lines J and distribution of J in the disk .33 Figure A.2 J = f r: Spot distribution of induced current density calculated along a diameter of a homogeneous di

18、sk in a uniform magnetic field35 Figure A.3 Ji= f r: Distribution of integrated induced current density calculated along a diameter of a homogeneous disk in a uniform magnetic field37 Figure B.1 Disk in the magnetic field created by an infinitely straight wire .39 Figure B.2 Current density lines J

19、and distribution of J in the disk (source: 1 wire, located at d = 10 mm from the edge of the disk).41 SANS 62226-2-1:2006This s tandard may only be used and printed by approved subscription and freemailing clients of the SABS .62226-2-1 IEC:2004 5 Figure B.3 Spot distribution of induced current dens

20、ity along the diameter AA of the disk (source: 1 wire, located at d = 10 mm from the edge of the disk).41 Figure B.4 Distribution of integrated induced current density along the diameter AA of the disk (source: 1 wire, located at d = 10 mm from the edge of the disk) .43 Figure B.5 Current density li

21、nes J and distribution of J in the disk (source: 1 wire, located at d = 100 mm from the edge of the disk).43 Figure B.6 Distribution of integrated induced current density along the diameter AA of the disk (source: 1 wire, located at d = 100 mm from the edge of the disk) .45 Figure B.7 Parametric cur

22、ve of factor K for distances up to 300 mm to a source consisting of an infinitely long wire (disk: R = 100 mm) .47 Figure B.8 Parametric curve of factor K for distances up to 1 900 mm to a source consisting of an infinitely long wire (disk: R = 100 mm) .49 Figure B.9 Parametric curve of factor K for

23、 distances up to 300 mm to a source consisting of an infinitely long wire (disk: R = 200 mm) .51 Figure B.10 Parametric curve of factor K for distances up to 1 900 mm to a source consisting of an infinitely long wire (disk: R = 200 mm) .53 Figure C.1 Conductive disk in the magnetic field generated b

24、y 2 parallel wires with balanced currents .55 Figure C.2 Current density lines J and distribution of J in the disk (source: 2 parallel wires with balanced currents, separated by 5 mm, located at d = 7,5 mm from the edge of the disk).57 Figure C.3 Ji= f r: Distribution of integrated induced current d

25、ensity calculated along the diameter AA of the disk (source: 2 parallel wires with balanced currents, separated by 5 mm, located at d = 7,5 mm from the edge of the disk) .57 Figure C.4 Current density lines J and distribution of J in the disk (source: 2 parallel wires with balanced currents separate

26、d by 5 mm, located at d = 97,5 mm from the edge of the disk).59 Figure C.5 Ji = f r: Distribution of integrated induced current density calculated along the diameter AA of the disk (source: 2 parallel wires with balanced currents separated by 5 mm, located at d = 97,5 mm from the edge of the disk).5

27、9 Figure C.6 Parametric curves of factor K for distances up to 300 mm to a source consisting of 2 parallel wires with balanced currents and for different distances e between the 2 wires (homogeneous disk R = 100 mm) 61 Figure C.7 Parametric curves of factor K for distances up to 1 900 mm to a source

28、 consisting of 2 parallel wires with balanced currents and for different distances e between the 2 wires (homogeneous disk R = 100 mm) 65 Figure C.8 Parametric curves of factor K for distances up to 300 mm to a source consisting of 2 parallel wires with balanced currents and for different distances

29、e between the 2 wires (homogeneous disk R = 200 mm) 69 Figure C.9 Parametric curves of factor K for distances up to 1 900 mm to a source consisting of 2 parallel wires with balanced currents and for different distances e between the 2 wires (homogeneous disk R = 200 mm) 73 Figure D.1 Conductive disk

30、 in a magnetic field created by a coil77 Figure D.2 Current density lines J and distribution of J in the disk (source: coil of radius r = 50 mm, conductive disk R = 100 mm, d = 5 mm).79 Figure D.3 Ji= f r: Distribution of integrated induced current density calculated along the diameter AA of the dis

31、k (source: coil of radius r = 50 mm, conductive disk R = 100 mm, d = 5 mm).79 Figure D.4 Current density lines J and distribution of J in the disk (source: coil of radius r = 200 mm, conductive disk R = 100 mm, d = 5 mm).81 SANS 62226-2-1:2006This s tandard may only be used and printed by approved s

32、ubscription and freemailing clients of the SABS .62226-2-1 IEC:2004 7 Figure D.5 Ji= f r: Distribution of integrated induced current density calculated along the diameter AA of the disk (source: coil of radius r = 200 mm, conductive disk R = 100 mm, d = 5 mm).81 Figure D.6 Current density lines J an

33、d distribution of J in the disk (source: coil of radius r = 10 mm, conductive disk R = 100 mm, d = 5 mm).83 Figure D.7 Ji= f r: Distribution of integrated induced current density calculated along the diameter AA of the disk (source: coil of radius r = 10 mm, conductive disk R = 100 mm, d = 5 mm).83

34、Figure D. 8 Parametric curves of factor K for distances up to 300 mm to a source consisting of a coil and for different coil radius r (homogeneous disk R = 100 mm).85 Figure D.9 Parametric curves of factor K for distances up to 1 900 mm to a source consisting of a coil and for different coil radius

35、r (homogeneous disk R = 100 mm).89 Figure D.10 Parametric curves of factor K for distances up to 300 mm to a source consisting of a coil and for different coil radius r (homogeneous disk R = 200 mm).93 Figure D.11 Parametric curves of factor K for distances up to 1 900 mm to a source consisting of a

36、 coil and for different coil radius r (homogeneous disk R = 200 mm).97 Table 1 Numerical values of the coupling factor for non-uniform magnetic field K for different types of magnetic field sources, and different distances between sources and conductive disk (R = 100 mm) .31 Table B.1 Numerical valu

37、es of factor K for distances up to 300 mm to a source consisting of an infinitely long wire (disk: R = 100 mm) 47 Table B.2 Numerical values of factor K for distances up to 1 900 mm to a source consisting of an infinitely long wire (disk: R = 100 mm) 49 Table B.3 Numerical values of factor K for dis

38、tances up to 300 mm to a source consisting of an infinitely long wire (disk: R = 200 mm) 51 Table B.4 Numerical values of factor K for distances up to 1 900 mm to a source consisting of an infinitely long wire (disk: R = 200 mm) 53 Table C.1 Numerical values of factor K for distances up to 300 mm to

39、 a source consisting of 2 parallel wires with balanced currents (homogeneous disk: R = 100 mm) .63 Table C.2 Numerical values of factor K for distances up to 1 900 mm to a source consisting of 2 parallel wires with balanced currents (homogeneous disk: R = 100 mm) .67 Table C.3 Numerical values of fa

40、ctor K for distances up to 300 mm to a source consisting of 2 parallel wires with balanced currents (homogeneous disk: R = 200 mm) .71 Table C.4 Numerical values of factor K for distances up to 1 900 mm to a source consisting of 2 parallel wires with balanced currents (homogeneous disk: R = 200 mm)

41、.75 Table D.1 Numerical values of factor K for distances up to 300 mm to a source consisting of a coil (homogeneous disk: R = 100 mm) .87 Table D.2 Numerical values of factor K for distances up to 1 900 mm to a source consisting of a coil (homogeneous disk: R = 100 mm) .91 Table D.3 Numerical values

42、 of factor K for distances up to 300 mm to a source consisting of a coil (homogeneous disk: R = 200 mm) .95 Table D.4 Numerical values of factor K for distances up to 1 900 mm to a source consisting of a coil (homogeneous disk: R = 200 mm) .99 SANS 62226-2-1:2006This s tandard may only be used and p

43、rinted by approved subscription and freemailing clients of the SABS .62226-2-1 IEC:2004 9 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ EXPOSURE TO ELECTRIC OR MAGNETIC FIELDS IN THE LOW AND INTERMEDIATE FREQUENCY RANGE METHODS FOR CALCULATING THE CURRENT DENSITY AND INTERNAL ELECTRIC FIELD INDUCED IN

44、 THE HUMAN BODY Part 2-1: Exposure to magnetic fields 2D models FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international

45、 co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referr

46、ed to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in t

47、his preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an internatio

48、nal consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable

49、efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible