SAE AS 6171 11-2016 Techniques for Suspect Counterfeit EEE Parts Detection by Design Recovery Test Methods.pdf
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1、_SAE Technical Standards Board Rules provide that: “This report is published by SAE to advance the state of technical and engineering sciences. The use of this report is entirely voluntary, and its applicability and suitability for any particular use, including any patent infringement arising theref
2、rom, is the sole responsibility of the user.”SAE reviews each technical report at least every five years at which time it may be revised, reaffirmed, stabilized, or cancelled. SAE invites your written comments and suggestions.Copyright 2016 SAE InternationalAll rights reserved. No part of this publi
3、cation may be reproduced, stored in a retrieval system or transmitted, in any form or by any means, electronic, mechanical, photocopying, recording, or otherwise, without the prior written permission of SAE.TO PLACE A DOCUMENT ORDER: Tel: 877-606-7323 (inside USA and Canada)Tel: +1 724-776-4970 (out
4、side USA)Fax: 724-776-0790Email: CustomerServicesae.orgSAE WEB ADDRESS: http:/www.sae.orgSAE values your input. To provide feedback on thisTechnical Report, please visithttp:/standards.sae.org/AS6171/11AEROSPACESTANDARDAS6171/11Issued 2016-10Techniques for Suspect/Counterfeit EEE Parts Detection by
5、Design Recovery Test MethodsRATIONALEThis document was created to provide guidelines for the application of Design Recovery and to define the compliance requirements for laboratories using this technique. Additionally, this document is intended to provide guidance for those unfamiliar with Design Re
6、covery and its application to detection of counterfeit electronic parts. This technique can be used for any risk level as needed to support results from other analysis techniques. INTRODUCTIONDesign Recovery is a destructive process used to obtain design information directly from a microcircuit. In
7、the context of counterfeit detection this method could allow for the determination of whether the recovered design information of a microcircuit matches the intended function or physical layout of a known “good” or “control” sample or matches the original design. This method can be applied to detect
8、ing changes in the microcircuit intended function through analysis of the physical layout of the circuit. These changes may be either non-malicious or unintentional, or they may be intentionally malicious (Trojan circuitry), such as a kill switch or to enable unauthorized access to the device or the
9、 product in which the device is used. Examples of physical defects which are indicators of a possible counterfeit device for which design recovery is particularly well suited include: wrong die, missing and/or misaligned contact window, parasitic transistors, cracks and other imperfections in a sili
10、con die or passivation layer or electromigration. However, it must be noted that circuits with the same functional behavior may have different physical design either due to a revised design, newer technology or different implementations of the same functional behavior from different manufacturers an
11、d therefore may not be counterfeit. This procedure requires the availability of either a known authentic sample or information on the design of the device.This document is focused on Design Recovery as it pertains to microcircuits, although it can be related to other electronic products such as disc
12、rete semiconductor devices or electronic devices with embedded microcircuits. The technique is a fundamentally destructive technique that requires decapsulation and removal of the silicon die from its packaging. The procedure outlined in this document assumes the design information is recovered from
13、 a silicon die, a layer at a time by sequential imaging and layer removal, thus recovering the original layout information used to manufacture the microcircuit. This approach ensures all the circuit design information can be captured, if required, so any “hidden” function is not missed. Non-destruct
14、ive techniques are being researched and may be available in the future.Depending on the complexity of the microcircuit under investigation and the required level of analysis required, Design Recovery can be an extremely time consuming and complex process; therefore, it may only be practical for micr
15、ocircuits with a Critical Risk Level. A microcircuit is removed from its packaging and sequentially each circuit layer is imaged and then removed so that the original design can be reconstructed. Potential applications of Design Recovery for counterfeit detection include microcircuit die-level authe
16、ntic sample or design comparison to assess possible design modifications.SAE INTERNATIONAL AS6171/11 Page 2 of 10TABLE OF CONTENTS1. SCOPE 32. REFERENCES 32.1 Applicable Documents 32.1.1 SAE Publications. 32.1.2 Other Publications. 32.2 Terms and Definitions . 32.3 Acronyms 33. EQUIPMENT AND OTHER S
17、UPPLIES 43.1 Sample Preparation Equipment 43.2 Data Capture and Analysis . 43.2.1 Equipment Limitations. 43.3 General Laboratory Supplies 44. TEST SAMPLE . 44.1 Sample Limitations 45. MATERIALS HANDLING, STORAGE, AND SAMPLE PREPARATION 56. DESCRIPTION OF METHODOLOGY 56.1 Introduction . 56.2 Test Pla
18、n . 56.3 Data Collection (Imaging) 67. CONTROLS AND CALIBRATION 77.1 Etching and Polishing 77.2 Data Capture. 78. ANALYSIS AND INTERPRETATION OF DATA. 78.1 Comparison Techniques of Sample Under Investigation Data to Layout Data 78.1.1 Non-Automated Visual Image/Data Inspection. 78.1.2 Automated Layo
19、ut Comparison 78.1.3 Functional Analysis . 89. REPORTING OF RESULTS . 810. QUALIFICATION AND CERTIFICATION . 910.1 Personnel Qualification . 910.1.1 Level 3 - Advanced Interpretation (Typically Device Physicist, Microcircuit Designer, Semiconductor Failure Analyst or Electrical Engineer) 910.1.2 Lev
20、el 2 - Basic Interpretation (Typically Technician, Microcircuit Designer or Electrical Engineer). 910.1.3 Level 1 - Operation (Typically an Operator) 1010.2 Safety 1011. NOTES 1011.1 Revision Indicator 10TABLE 1 DESIGN RECOVERY COMPLEXITY LEVELS 5TABLE 2 COMPARISON OF SAMPLE PREPARATION TECHNIQUES 6
21、TABLE 3 COMPARISON OF IMAGING TECHNIQUES 6TABLE 4 REQUIRED TEST REPORT INFORMATION. 8SAE INTERNATIONAL AS6171/11 Page 3 of 101. SCOPEThis method outlines the requirements, capabilities, and limitations associated with the application of Design Recovery for the detection of counterfeit electronic par
22、ts including: Operator training; Sample preparation; Imaging techniques; Data interpretation; Design/functional matching; Equipment maintenance and; Reporting of data. The method is primarily aimed at analyses performed by circuit delayering and imaging with a scanning electron microscope or optical
23、 microscope; however, many of the concepts are applicable to other microscope and probing techniques to recover design data. The method is not intended for the purpose of manufacturing copies of a device, but rather to compare images or recover the design for determination of authenticity.If AS6171/
24、11 is invoked in the contract, the base document, AS6171 General Requirements shall also apply.2. REFERENCES2.1 Applicable DocumentsThe following publications form a part of this document to the extent specified herein. The latest issue of SAE publications shall apply. The applicable issue of other
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