EN 60749-19-2003 en Semiconductor devices C Mechanical and climatic test methods Part 19 Die shear strength (Incorporating Corrigendum June 2003 Incorporates Amendment A1 2010)《半导体.pdf
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1、BRITISH STANDARDBS EN 60749-19:2003Semiconductor devices Mechanical and climatic test methods Part 19: Die shear strengthICS 31.080.01g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g3g38g
2、50g51g60g53g44g42g43g55g3g47g36g58+A1:2010National forewordThis British Standard is the UK implementation of EN 60749-19:2003+A1:2010. It is identical with IEC 60749-19:2003, incorporating corrigendum June 2003 and amendment 1:2010. It supersedes BS EN 60749-19:2003 which is withdrawn.The UK partici
3、pation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for i
4、ts correct application.Compliance with a British Standard cannot confer immunity from legal obligations.BS EN 60749-19:2003+A1:2010This British Standard was published under the authority of the Standards Policy and Strategy Committee on 20 June 2003 BSI 2010Amendments/corrigenda issued since publica
5、tionDate Comments 31 October 2010 Implementation of IEC amendment 1:2010 with CENELEC endorsement A1:2010. Addition of Note 2 in the Scope.ISBN 978 0 580 68745 7EUROPEAN STANDARD EN 60749-19NORME EUROPENNE EUROPISCHE NORM CENELEC European Committee for Electrotechnical Standardization Comit Europen
6、de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60749-19:2003 E ICS 31.080.01 Incor
7、porates Corrigendum June 2003English version Semiconductor devices Mechanical and climatic test methods Part 19: Die shear strength (IEC 60749-19:2003) Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 19: Rsistance de la pastille au cisaillement (CEI 60749-19:2003) Halblei
8、terbauelemente Mechanische und klimatische Prfverfahren Teil 19: Prfung der Chip-Bondfestigkeit (IEC 60749-19:2003) This European Standard was approved by CENELEC on 2003-04-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving th
9、is European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versio
10、ns (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of A
11、ustria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom. :2003+A1 September 2010 Foreword The text of document 47/1664/FDIS, future edition
12、1 of IEC 60749-19, prepared by IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60749-19 on 2003-04-01. This mechanical and climatic test method, as it relates to die shear strength, is a complete rewrite of the test contained in Clau
13、se 7, Chapter 2 of EN 60749:1999. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2004-01-01 latest date by which the national standards conflicting with the EN have to be wit
14、hdrawn (dow) 2006-04-01 The contents of the corrigendum of March 2003 have been included in this copy. _ Endorsement notice The text of the International Standard IEC 60749-19:2003 was approved by CENELEC as a European Standard without any modification. _ Page 2Foreword to amendment A1 The text of d
15、ocument 47/2016/CDV, future amendment 1 to IEC 60749-19:2003, prepared by IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as amendment A1 to EN 60749-19:2003 on 2010-09-01. Attention is drawn to the possibility that some of the elements of
16、 this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates were fixed: latest date by which the amendment has to be implemented at national level by publication of an identical national standard
17、 or by endorsement (dop) 2011-06-01 latest date by which the national standards conflicting with the amendment have to be withdrawn (dow) 2013-09-01 _ Endorsement notice The text of amendment 1:2010 to the International Standard IEC 60749-19:2003 was approved by CENELEC as an amendment to the Europe
18、an Standard without any modification. _ BS EN 60749-19:2003+A1:2010EN 60749-19:2003+A1:2010 (E)SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 19: Die shear strength 1 Scope This part of IEC 60749 determines (see note) the integrity of materials and procedures used to attach semicond
19、uctor die to package headers or other substrates (for the purpose of this test method, the term “semiconductor die” should be taken to include passive elements). This test method is generally only applicable to cavity packages or as a process monitor. It is not applicable for die areas greater than
20、10 mm2. It is also not applicable to flip chip technology or to flexible substrates. NOTE 1occurs, the type of failure resulting from the application of force and the visual appearance of the residual die attach medium and the header/substrate metallization. 2 Description of the test apparatus The a
21、pparatus for this test shall consist of a load applying instrument in the form of a linear motion force-applying instrument or a circular dynamometer with a lever arm. In addition it shall have the following: a) a contact tool which applies a uniform load to the edge of the die, perpendicular to the
22、 die mounting plane of the package or substrate (see Figure 3). A compliant material on the contact tool may be used to ensure that the load is applied uniformly (see Figure 1); b) an accuracy of 5 % of full scale or 0,5 N, whichever is the greater tolerance; c) a means of indicating the load applie
23、d; d) a facility, fitted with suitable light source, to allow visual observation (e.g. at 10 magnification) of the die and contact tool during testing; e) a fixture with rotational capability relative to the die contact tool and package/substrate holding fixture to allow line contact of the tool alo
24、ng the whole edge of the die from end to end (see Figure 2). NOTE Many measuring equipments are graduated in kilogram-force (kgf) (1 kgf = 9,8 N). Page 3NOTE 2 In cavity packages, die shear strength is measured in order to assure the strength of the die attachment within the cavity. In non-cavity pa
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