DLA SMD-5962-99539 REV B-2005 MICROCIRCUIT DIGITAL DIGITAL SIGNAL PROCESSOR 32 BITS MONOLITHIC SILICON《微型电路 数字型 数字信号处理器 32位单块硅》.pdf

《DLA SMD-5962-99539 REV B-2005 MICROCIRCUIT DIGITAL DIGITAL SIGNAL PROCESSOR 32 BITS MONOLITHIC SILICON《微型电路 数字型 数字信号处理器 32位单块硅》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-99539 REV B-2005 MICROCIRCUIT DIGITAL DIGITAL SIGNAL PROCESSOR 32 BITS MONOLITHIC SILICON《微型电路 数字型 数字信号处理器 32位单块硅》.pdf（30页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Made technical change in paragraph 1.3. Update boilerplate to MIL-PRF-38535 requirements. - LTG 02-05-29 Thomas M. Hess B Made technical changes in section 1.3 and table I. Add vendor CAGE F7400. Update boilerplate to MIL-PRF-38535 requirements.

2、- LTG 05-04-15 Thomas M. Hess REV SHEET REV B B B B B B B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 REV B B B B B B B B B B B B B B REV STATUS OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENT

3、ER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 00-06-06 MICROCIRCUIT, DIGITAL, DIGITAL SIGNAL PROCESSOR, 32 BITS, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-99539 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY

4、 ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL B SHEET 1 OF 29 DSCC FORM 2233 APR 97 5962-E304-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-99539 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTE

5、R COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishe

6、s are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 99539 01 Q X X Federal RHA Device Device Case Lead stock class desi

7、gnator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device

8、 class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit functio

9、n Frequency 01 21020F 32-bit digital signal processor 20.0 MHz 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-

10、883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package

11、 style X See figure 1 256 Ceramic quad flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A

12、5962-99539 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VDD) -0.5 V dc to +7.0 V dc 2/ Input voltage range (VIN) -0.5 V dc to VDD+ 0.5 V dc 3/ Output curren

13、t (IOUT) 50 mA 4/ Lead temperature (soldering, 10 seconds) +265C 5/ Storage temperature range (TSTG) -65C to +150C Maximum power dissipation (continuous) (PD) 3.4 W Thermal resistance junction-to-case (JC). 3C/W Junction temperature (TJ) +165C 1.4 Recommended operating conditions. Operating supply v

14、oltage range (VDD) +4.5 V dc to +5.5 V dc Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless other

15、wise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-

16、1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assis

17、t.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stress above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability

18、. 2/ Device is functional from +4.5 V to +5.5 V with reference to ground. 3/ (VDD+ 0.5 V) should not exceed +7.0 V. 4/ This is the maximum current of any single output. 5/ Duration 10 seconds maximum at a distance not less than 1.5 mm from the device body, and the same lead shall not be resoldered u

19、ntil 3 minutes have elapsed. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-99539 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government pu

20、blications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (IEEE) IEEE Standard 1149.1 - IEEE Standard Test Acces

21、s Port and Boundary Scan Architecture. (Applications for copies should be addressed to the Institute of Electrical and Electronics Engineers, 445 Hoes Lane, Piscataway, NJ 08854-4150.) (Non-Government standards and other publications are normally available from the organizations that prepare or dist

22、ribute the documents. These documents may also be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this docum

23、ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device ma

24、nufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified here

25、in. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordanc

26、e with 1.2.4 herein and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Test circuit and timing waveforms. The test circuit and timing waveforms shall be as specif

27、ied on figure 4. 3.2.5 Boundary scan instruction codes. The boundary scan instruction codes shall be as specified on figure 5. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradi

28、ation parameter limits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-99539 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS

29、, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed i

30、n 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall

31、 still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required

32、 in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of t

33、his drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

34、 supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as requir

35、ed for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herei

36、n) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documen

37、tation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 132 (see MIL-PRF-38535, appendix A). 3.11 IEEE 1149.1 compliance.

38、Theses devices shall be compliant to IEEE 1149.1. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM

39、plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted o

40、n all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in te

41、st, method 1015 of MIL-STD-883. (1) Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power

42、dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883 (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

43、m IHS-,-,-SIZE A 5962-99539 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C +4.5 V VDD +5.5 V unless otherwise specified

44、Group A subgroups Device type Min Max Unit VIHVDD= 5.5 V 1/ 2/ 1, 2, 3 All 2.0 High level input voltage VIHCRVDD = 5.5 V 1/ 3/ 1, 2, 3 All 3.0 V VILVDD= 5.5 V 1/ 2/ 4/ 1, 2, 3 All 0.8 Low level input voltage VILCVDD = 5.5 V 1/ 3/ 1, 2, 3 All 0.6 V High level output voltage VOHVDD=4.5 V, IOH= -1.0 mA

45、 5/ Minimum and maximum values recorded 1, 2, 3 All 2.4 V Low level output voltage VOLVDD=4.5 V, IOL= 4.0 mA 5/ Minimum and maximum values recorded 1, 2, 3 All 0.4 V High level input current IIHVDD= 5.5 V, VIN= VDD 6/ 7/ 1, 2, 3 All 10 A IILVDD= 5.5 V, VIN= 0.0 V 6/ 1, 2, 3 All 10 Low level input cu

46、rrent IILTVDD= 5.5 V, VIN= 0.0 V 7/ 1, 2, 3 All 350 A Three-state leakage current IOZHVDD= 5.5 V, VIN= VDD 8/ 1, 2, 3 All 10 A Three-state leakage current IOZLVDD= 5.5 V, VIN= 0.0 V8/ 1, 2, 3 All 10 A Supply current (idle) IVDDpins IDDIDLEVDD= 5.5 V 1, 2, 3 All 150 mA Supply current (internal) IVDDp

47、ins IDDINVDD= 5.5 V 1, 2, 3 All 430 mA Input capacitance CINVIN = 2.5 V TC = 25C fIN= 1.0 MHz See 4.4.1c 4 All 10 pF Functional test VIL= 0.0 V, VIH= 3.0 V VOL= 1.45 V, VOH= 1.55 V VDD= 4.5 V, 5.0 V, and 5.5 V f = 20 MHz See 4.4.1b 7, 8 All See footnotes at end of table. Provided by IHSNot for Resal

48、eNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-99539 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions -55C TC +125C +4.5 V VDD +5.5 V unless otherwise specified Group A subgroups Device type Min Max Unit Clock signals and reset CLKIN period tCK9, 10, 11 All 50 150 ns CLKIN width high tCKH9, 10, 11 All 10 ns CLKIN width low tCKL9, 10, 11 All 10 ns RESET width low tWRST9