DLA SMD-5962-99525 REV C-2005 MICROCIRCUIT MEMORY DIGITAL CMOS ELECTRICALLY ALTERABLE (IN-SYS REPROGRAMMABLE) 512 MACROCELL PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《微型电路 带记忆力 数.pdf

《DLA SMD-5962-99525 REV C-2005 MICROCIRCUIT MEMORY DIGITAL CMOS ELECTRICALLY ALTERABLE (IN-SYS REPROGRAMMABLE) 512 MACROCELL PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《微型电路 带记忆力 数.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-99525 REV C-2005 MICROCIRCUIT MEMORY DIGITAL CMOS ELECTRICALLY ALTERABLE (IN-SYS REPROGRAMMABLE) 512 MACROCELL PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《微型电路 带记忆力 数.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correction to Figure 1, pin 1 indication. ksr 00 - 11 - 30 Raymond Monnin B Correction to fMAX2and fMAX3for device 02, removed and replaced Figure 1. ksr 01 - 06 - 05 Raymond Monnin C Boilerplate update and as part of five year review. tcr 05-12-

2、20 Raymond Monnin REV SHET REV C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling CO

3、LUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYS REPROGRAMMABLE), 512 MACROCELL, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC AND AGENCIES OF THE DEPARTMENT OF D

4、EFENSE DRAWING APPROVAL DATE 00-10-20 SILICON AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-99525 C SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E142-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99525

5、 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outl

6、ines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 99525 01 Q Z C Federal RHA Device Device Case

7、Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate R

8、HA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic n

9、umber Circuit function Toggle Speed (MHz) 01 CY37512 512 Macrocell CPLD 83 02 CY37512 512 Macrocell CPLD 100 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-

10、certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline l

11、etter Descriptive designator Terminals Package style Z See figure 1 208 Quad flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitt

12、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99525 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC)- -0.5 V dc to +7.0 V dc Programming supply voltage range

13、 (VPP) - 4.5 V dc to 5.5 V dc DC input voltage range - -0.5 V dc to +7.0 V dc Maximum power dissipation - 3.3 W 2/ Lead temperature (soldering, 10 seconds) - +260C Thermal resistance, junction-to-case (JC): Case outline Z - 7.2 C/W Junction temperature (TJ) - +150C 3/ Storage temperature range - -65

14、C to +150C Endurance - 25 erase/write cycles (minimum) Data retention- 10 years (minimum) 1.4 Recommended operating conditions. 4/ Case operating temperature Range (TC) - -55C to +125C Supply voltage relative to ground (VCC) - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) - 0 V dc Inpu

15、t high voltage (VIH)- 2.0 V dc minimum Input low voltage (VIL) - 0.8 V dc maximum 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specifi

16、ed, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Inter

17、face Standard For Microcircuit Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings . MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil

18、or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must wit

19、hstand the added PDdue to short circuit test (e.g., IOS). 3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 4/ All voltage values in this drawing are with respect to VSSProvided by IHS

20、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99525 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following documents form a p

21、art of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192M-95 - Standard Guide for the Measurement of Single Event Phe

22、nomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA

23、/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distri

24、bute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this documen

25、t, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manu

26、facturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein

27、. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accor

28、dance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradia

29、tion parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marki

30、ng. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA p

31、roduct using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device c

32、lasses Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufa

33、cturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to

34、 DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot f

35、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99525 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of conformance. A certificate of conformance as requir

36、ed for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herei

37、n) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documen

38、tation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.11 Processing CPLDs. All tes

39、ting requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.11.1 Erasure of CPLDs. When specified, devices shall be erased in accordance with the procedures and characteristics specified in 4.6 herein. 3.11.2 Programmability of CPLDs. When sp

40、ecified, devices shall be programmed to the specified pattern using the procedures and characteristics specified in 4.7 herein. 3.11.3 Verification of erasure or programmed CPLDs. When specified, devices shall be verified as either programmed (see 4.7 herein) to the specified pattern or erased (see

41、4.6 herein). As a minimum, verification shall consist of performing a functional test (subgroup 7) to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. 3.12 Endurance. A reprogram

42、mability test shall be completed as part of the vendors reliability monitor. This reprogrammability test shall be done only for initial characterization and after any design or process changes which may affect the reprogrammability of the device. The methods and procedures may be vendor specific, bu

43、t shall be under document control and shall be made available upon request. 3.13 Data Retention. A data retention stress test shall be completed as part of the vendors reliability monitors. This test shall be done for initial characterization and after any design or process changes which may affect

44、data retention. The methods and procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document control and shall be made available upon request of the acquiring or pr

45、eparing activity, along with the test data. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99525 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 6 DSCC FORM 2234 APR 97 TABLE

46、I. Electrical performance characteristics. Limits Test Symbol Conditions 4.5 V VCC 5.5 V -55oC TC +125oC unless otherwise specifiedGroup A Subgroups Device type Min Max Unit High Level output voltage VOHVCC= 4.5 V, VIL= 0.8V IOH= -2.0 mA, VIH= 2.0 V 1/ 2.4 V VCC= 5.5 V, VIL= 0.8V IOH= 0 A, VIH= 2.0 V 3/ 4.5 V High Level output voltage with Output Disabled 2/ VOHZVCC= 5.5 V, VIL= 0.8V IOH= -150 A, VIH= 2.0 V 3/ 3.6 V Low level output voltage VOLVCC= 4.5 V, IOL= 12.0 mA VIL= 0.8 V, VIH= 2.0 V 1/ 0.5 V High level input voltage 4/ VIH2 VC