DLA SMD-5962-96535 REV F-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL D FLIP-FLOP WITH CLEAR AND PRESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

《DLA SMD-5962-96535 REV F-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL D FLIP-FLOP WITH CLEAR AND PRESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96535 REV F-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL D FLIP-FLOP WITH CLEAR AND PRESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R142-97. 96-12-10 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-09-04 Thomas M. Hess C Correct the title to accurately describe the device function. Add d

2、evice types 02 and 03. Add appendix A. Change figure 4, switching waveforms and test circuit. Update boilerplate to the latest MIL-PRF-38535 requirements. - jak 07-12-13 Thomas M. Hess D Add note 9/ to section 1.5 for device types 02 and 03. Add footnote 6/ to table IB and remove table III, Irradiat

3、ion test connections. - jak 08-05-05 Thomas M. Hess E Correct terminal connections for pin number 8, 9 and 10 in figure 1 and update boilerplate to current MIL-PRF-38535 requirements. Add information to footnote 6/ in section 1.5.- MAA 08-10-17 Thomas M. Hess F Add equivalent test circuit and footno

4、te 5 in figure 4. Update radiation features in section 1.5 and SEP table IB - MAA 12-05-10 Thomas M. Hess REV SHEET REV F F F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 24 25 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh

5、V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking MICROCIRCUIT, DI

6、GITAL, ADVANCED CMOS, RADIATION HARDENED, DUAL D FLIP-FLOP WITH CLEAR AND PRESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-12 REVISION LEVEL F SIZE A CAGE CODE 67268 5962-96535 SHEET 1 OF 25 DSCC FORM 2233 APR 97 5962-E293-12Provided by IHSNot for ResaleNo reproduction o

7、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliabil

8、ity (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is

9、 as shown in the following example 5962 H 96535 02 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked d

10、evices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device typ

11、e(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS74 Radiation hardened, dual D flip-flop with clear and preset, TTL compatible inputs 02 54ACTS74E Enhanced radiation hardened, dual D flip-flop with clear and preset, TTL compatibl

12、e inputs 03 54ACTS74E Enhanced radiation hardened, dual D flip-flop with clear and preset, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor s

13、elf-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline l

14、etter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Dual flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo

15、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD): Device type 01 . -0.3 V

16、dc to +7.0 V dc Device type 02 and 03 . -0.3 V dc to +6.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -6

17、5C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC): Case outline C . See MIL-STD-1835 Case outline X . 15.5C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 . 1.0 W Device type 02 and 03 . 3.2 W 4/ 1.4 Recommen

18、ded operating conditions. 2/ 3/ Supply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device type 02 and 03 . +3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum inpu

19、t rise or fall time rate at VDD= 4.5 V (tr, tf) . 1 ns/V 5/ 1.5 Radiation features. Maximum total dose available: Device type 01 (dose rate = 50 300 rads (Si)/s) 5 x 105Rads (Si) Device type 02 (effective dose rate = 1 rad (Si)/s) . 1 x 106Rads (Si) 6/ Device type 03 (dose rate = 50 300 rads (Si)/s)

20、 5 x 105Rads (Si) Single event phenomenon (SEP) : Device type 01: No SEU at effective linear energy transfer (LET) (see 4.4.4.4) . 80 MeV-cm2/mg 8/ 7/ No SEL at effective linear energy transfer (LET) (see 4.4.4.4) 120 MeV-cm2/mg 8/ 7/ Device types 02 and 03: No SEU at effective linear energy transfe

21、r (LET) (see 4.4.4.4) . 108 MeV-cm2/mg 8/ 7/ No SEL at effective linear energy transfer (LET) (see 4.4.4.4) 120 MeV-cm2/mg 8/ 7/ Dose rate upset (20 ns pulse) 1 x 109 Rads (Si)/s 8/ 9/ Dose rate latch-up . None 8/ Dose rate survivability . 1 x 1012 Rads (Si)/s 8/ 1/ Stresses above the absolute maxim

22、um rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS.3/ The limits for the parameters specified herein shall apply over the full specified VDDrang

23、e and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 section 3.4.1, PD(Package) = (TJ (max) - TC(max). JC5/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ Device type 02 is irradiated at dose ra

24、te = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specificati

25、on for these devices only applies to a low dose rate environment. 7/ Radiation testing is performed on the standard evaluation circuit. (SEC). 8/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 9/ This lim

26、it is applicable for device type 01, 02, and 03 with VDD 4.5 V. Device types 02 and 03 do not meet this limit at VDD 4.5 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96535 DLA LAND AND MARITIME COLUMBUS

27、, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of

28、 these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification For. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Elec

29、tronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order

30、Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM

31、 INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, Wes

32、t Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption

33、has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not a

34、ffect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and

35、physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be

36、as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4. Provided

37、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Irradiation test connections. The irradiation test connection

38、s shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical perfor

39、mance characteristics and post-irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each sub

40、group are described in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not ma

41、rking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance

42、 mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall

43、be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein).

44、The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of

45、 MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification

46、of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA La

47、nd and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device

48、class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Sy