DLA SMD-5962-95780 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS TRIPLE 3-INPUT NOR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体三重3输入硅单片电路线型微电路》.pdf

《DLA SMD-5962-95780 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS TRIPLE 3-INPUT NOR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体三重3输入硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95780 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS TRIPLE 3-INPUT NOR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体三重3输入硅单片电路线型微电路》.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5062-R117-98. - THL 98-06-12 Raymond L. Monnin B Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 04-02-26 Thomas M. Hess REV SHEET REV B B B B B B B SHEET 15 16 17 18 19 20 21 REV

2、 STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL D

3、EPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-09-14 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, TRIPLE 3-INPUT NOR GATE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95780 SHEET 1 OF 21 DSCC FO

4、RM 2233 APR 97 5962-E129-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95780 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHI

5、O 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are

6、reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95780 01 V X C Federal RHA Device Device Case Lead stock class designator type class outlin

7、e finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devi

8、ces meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS27 Radiation har

9、dened, SOS, high speed CMOS, triple 3-input NOR gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compli

10、ant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C C

11、DIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5

12、962-95780 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output v

13、oltage range (VOUT). -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN) 10 mA DC output current, any one output (IOUT). 25 mA Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case outline C. 24C/W

14、Case outline X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C. 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C. 0.68 W Case outline X . 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply

15、 voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage (VIN) 0 V dc to VCCOutput voltage (VOUT) 0 V dc to VCC Maximum low level input voltage (VIL) . 30% of VCC Minimum high level input voltage (VIH) 70% of VCCCase operating temperature range (TC) -55C to +125C Maximum input rise and fall time at

16、 VCC= 4.5 V (tr, tf). 100 ns/V Radiation features: Total dose 2 X 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) . 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 X 1010Rads(Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 X 101

17、2Rads(Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified he

18、rein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If the device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case C . 13.5 mW/C Case X

19、8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95780 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 22

20、34 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the D

21、epartment of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard

22、 Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handboo

23、ks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in th

24、is document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the d

25、evice manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specif

26、ied herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF

27、-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 L

28、ogic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4 3.2.6 Radiation test connections. The radiation test connections shall be as specified in table III herein. Provid

29、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95780 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirrad

30、iation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements s

31、hall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the ent

32、ire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking fo

33、r device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, app

34、endix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a m

35、anufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, th

36、e requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be

37、 provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appe

38、ndix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer

39、. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95780 STANDA

40、RD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Device type VCCGroup A subgroups Limits 2/ Unit Test conditions 1/ -55C TC +125C unless otherwise specified Min

41、 Max For all inputs affecting output under test, VIN= 3.15 V or 1.35 V For all other inputs, VIN= VCCor GND IOH= -50 A All 1, 2, 3 4.40 M, D, P, L, R 3/ 4.5 V 1 4.40 For all inputs affecting output under test, VIN= 3.85 V or 1.65 V For all other inputs, VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 Hig

42、h level output voltage VOHM, D, P, L, R 3/ 5.5 V 1 5.40 V For all inputs affecting output under test, VIN= 3.15 V or 1.35 V For all other inputs, VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M, D, P, L, R 3/ 4.5 V 1 0.1 For all inputs affecting output under test, VIN= 3.85 V or 1.65 V For all other inpu

43、ts, VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 Low level output voltage VOLM, D, P, L, R 3/ 5.5 V 1 0.1 V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs, VIN= VCCor GND All 2, 3 +5.0 Input current high IIHM, D, P, L, R 3/ All 5.5 V 1 +5.0 1 -0.5 For input under test, VIN= GND For all oth

44、er inputs, VIN= VCCor GND All 2, 3 -5.0 Input current low IILM, D, P, L, R 3/ All 5.5 V 1 -5.0 A 1 -4.8 For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs, VIN= VCCor GND All 2, 3 -4.0 Output current high (source) IOHVOUT= 4.1 V M, D, P, L, R 3/ All 4.5 V 1 -4.0 1 4

45、.8 For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs, VIN= VCCor GND All 2, 3 4.0 Output current low (sink) IOLVOUT= 0.4 V M, D, P, L, R 3/ All 4.5 V 1 4.0 mA 1 10.0 VIN= VCCor GND All 2, 3 200 Quiescent supply current ICCM, D, P, L, R 3/ All 5.5 V 1 200 A See foot

46、notes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-95780 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical perform

47、ance characteristics - Continued. Test Symbol Device type VCCGroup A subgroups Limits 2/ Unit Test conditions 1/ -55C TC +125C unless otherwise specified Min Max Input capacitance CINAll 5.0 V 4 10 pF 4 24 Power dissipation capacitance CPD4/ VIH= 5.0 V, VIL= 0.0 V f = 1MHz, See 4.4.1c All 5.0 V 5, 6

48、 27 pF VIH= 3.15 V, VIL= 1.35 V See 4.4.1b All 7, 8 L H Functional test 5/ M, D, P, L, R 3/ All 4.5 V 7 L H 9 2.0 18.0 CL= 50 pF RL= 500, See figure 4 All 10, 11 2.0 20.0 tPHL6/ M, D, P, L, R 3/ All 4.5 V 9 2.0 20.0 9 2.0 20.0 CL= 50 pF RL= 500, See figure 4 All 10, 11 2.0 22.0 Propagation delay tim

49、e, An, Bn, or Cn to Yn tPLH6/ M, D, P, L, R 3/ All 4.5 V 9 2.0 22.0 ns 9 15.0 Output transition time tTHL, tTLH7/ CL= 50 pF RL= 500, See figure 4 All 4.5 V 10, 11 22.0 ns 1/ Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table I herein. Output terminals not des