DLA SMD-5962-93187 REV L-2007 MICROCIRCUIT HYBRID DIGITAL STATIC RANDOM ACCESS MEMORY CMOS 128K X 32-BIT《128K X 32位静态随机存取存储器 氧化物半导体数字混合微型电路》.pdf

《DLA SMD-5962-93187 REV L-2007 MICROCIRCUIT HYBRID DIGITAL STATIC RANDOM ACCESS MEMORY CMOS 128K X 32-BIT《128K X 32位静态随机存取存储器 氧化物半导体数字混合微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-93187 REV L-2007 MICROCIRCUIT HYBRID DIGITAL STATIC RANDOM ACCESS MEMORY CMOS 128K X 32-BIT《128K X 32位静态随机存取存储器 氧化物半导体数字混合微型电路》.pdf（34页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added device type 10. Redrew entire document. 95-07-07 K. A. Cottongim B Corrected true dimensioning table and removed dimensions A2 and F in figure 1. Changed dimension A min from 0.185 inches to 0.180 inches for case outlines U and Y. Changes d

2、imension A min from 0.210 inches to 0.200 inches for case outlines T and X. Added vendor CAGE code 88379 for device types 01 through 10. Made editorial changes throughout. 95-10-18 K. A. Cottongim C Added case outlines M, N, 4, and 5. Redrew entire document. 96-11-20 K. A. Cottongim D Table I, chang

3、ed the maximum limit for the supply current 32-bit mode test (ICC32) from 440 to 520 for device types 05 and 06, and from 500 to 520 for device types 07 and 08. -sld 97-09-08 K. A. Cottongim E Figure 1: For case outlines 4 and 5 changed the dimension D3 min and max limits to 1.020 and 1.060 inches.

4、For case outlines 4 and 5 changed dimension A min limit to .135 inches. For case outlines 4 and 5 changed dimension L min limit to .132 inches. -sld 98-04-06 K. A. Cottongim F Table I; changed the max limit for ICC32for device types 05, 06, 07, and 08 from 520 mA to 600 mA. Changed the max limit for

5、 ICCDR1for device types 05 through 10 from 10.4 mA to 11.6 mA. -sld 98-07-13 K. A. Cottongim G Added device type 11. Added vendor CAGE 0EU86 for device types 05 through 09. -sld 99-08-27 Raymond Monnin H Figure 1; changed the maximum limit for dimension D3 from 1.060 inches to 1.086 inches for case

6、outlines 4 and 5. -sld 00-02-07 Raymond Monnin J Added note to paragraph 1.2.2 and table I regarding the 4 transistor design. Added footnote 3 for case outlines U, T, X, and Y on the bulletin page. Redrew entire document. -sld 00-11-14 Raymond Monnin K Added device types 12 through 18. -sld 01-11-13

7、 Raymond Monnin L Updated drawing. -gz 07-04-16 Robert M. Heber REV SHEET REV L L L L L L L L L L L L SHEET 15 16 17 18 19 20 21 22 23 24 25 26 REV STATUS REV L L L L L L L L L L L L L L OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve L. Duncan DEFENSE SUPPLY CENTER COLUM

8、BUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil/ APPROVED BY Kendall A. Cottongim MICROCIRCUIT, HYBRID, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K x 32-BIT THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DE

9、PARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-06-24 AMSC N/A REVISION LEVEL L SIZE A CAGE CODE 67268 5962-93187 SHEET 1 OF 26 DSCC FORM 2233 APR 97 5962-E344-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

10、93187 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and

11、 are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 93187 01 H M X Federal RHA Device Device Case Lead stock class designator type class o

12、utline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash

13、 (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 1/ Generic number Circuit function Access time 01 WS128K32-120HQ, ACT-S128K32-120PQ SRAM, 128K x 32-bit 120 ns 02 WS128K32-100HQ, ACT-S128K32-100PQ SRAM, 128K x 32-bit 100

14、ns 03 WS128K32-85HQ, ACT-S128K32-85PQ SRAM, 128K x 32-bit 85 ns 04 WS128K32-70HQ, ACT-S128K32-70PQ SRAM, 128K x 32-bit 70 ns 05,12 WS128K32-55HQ, ACT-S128K32-55PQ, SRAM, 128K x 32-bit 55 ns AS8S128K32P-55 06,13 WS128K32-45HQ, ACT-S128K32-45PQ, SRAM, 128K x 32-bit 45 ns AS8S128K32P-45 07,14 WS128K32-

15、35HQ, ACT-S128K32-35PQ, SRAM, 128K x 32-bit 35 ns AS8S128K32P-35 08,15 WS128K32-25HQ, ACT-S128K32-25PQ, SRAM, 128K x 32-bit 25 ns AS8S128K32P-25 09,16 WS128K32-20HQ, ACT-S128K32-20PQ, SRAM, 128K x 32-bit 20 ns AS8S128K32P-20 10,17 WS128K32-17HQ, ACT-S128K32-17PQ, SRAM, 128K x 32-bit 17 ns AS8S128K32

16、P-17 11,18 WS128K32-15HQ SRAM, 128K x 32-bit 15 ns _ 1/ Due to the nature of the 4 transistor design of the die in these device types, topologically pure testing is important, particularly for high reliability applications. The device manufacturer should be consulted concerning their testing methods

17、 and algorithms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93187 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 3 DSCC FORM 2234 APR 97 1.2.3 Device class designator. Th

18、is device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as foll

19、ows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced tes

20、ting version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B,

21、C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the excep

22、tion(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1

23、835 and as follows: 1/ Outline letter Descriptive designator Terminals Package style M See figure 1 66 Hex-in-line, single cavity, without standoffs N See figure 1 66 Hex-in-line, single cavity, without standoffs T See figure 1 66 Hex-in-line, single cavity, with standoffs U See figure 1 66 Hex-in-l

24、ine, single cavity, without standoffs X See figure 1 66 Hex-in-line, single cavity, with standoffs Y See figure 1 66 Hex-in-line, single cavity, without standoffs 4 See figure 1 66 Hex-in-line, single cavity, with standoffs 5 See figure 1 66 Hex-in-line, single cavity, with standoffs 1.2.5 Lead fini

25、sh. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 2/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc Signal voltage range (any pin) . -0.5 V dc to +7.0 V dc Power dissipation (PD): Device types 01 through 08, and 12 through 15. 2.2 W Device types 09, 10, 11,

26、 16, 17, and 18 4.4 W Thermal resistance junction-to-case (JC) . 6.6C/W Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds). +300C 1/ Additional case outlines are available on Standard Microcircuit Drawing 5962-95595. 2/ Stresses above the absolute maximum ratings may ca

27、use permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93187 DEFENSE SUPPLY CENTER COLUMBU

28、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input low voltage range (VIL) -0.5 V dc to +0.8 V dc Input high voltage range (VIH) +2.2 V dc to VCC+0.3 V dc Output low voltage, maximum

29、 (VOL). +0.4 V dc Output high voltage, minimum (VOH) +2.4 V dc Case operating temperature range (TC). -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specifie

30、d herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits.

31、 MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ o

32、r http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence.

33、 Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance

34、 with MIL-PRF-38534 may include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance

35、 requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction,

36、 and physical dimensions shall be as specified in MIL-PRF-38534 and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93187 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEE

37、T 5 DSCC FORM 2234 APR 97 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Timing

38、 diagram(s). The timing diagram(s) shall be as specified on figures 4 and 5. 3.2.5 Block diagram. The block diagram shall be as specified on figure 6. 3.2.6 Output load circuit. The output load circuit shall be as specified on figure 7. 3.3 Electrical performance characteristics. Unless otherwise sp

39、ecified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each s

40、ubgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performan

41、ce requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all paramete

42、rs manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be require

43、d from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as req

44、uired in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The mo

45、dification in the QM plan shall not affect the form, fit, or function as described herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93187 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISI

46、ON LEVEL L SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions 1/ 2/ -55C TC +125C VSS= 0 V dc +4.5 V dc VCC +5.5 V dc unless otherwise specified Group A subgroups Device types Min Max Unit DC PARAMETERS Supply current, 32-bit mode ICC32CS = V

47、IL, OE = VIH, f = 5 MHz CMOS compatible VCC = +5.5 V dc 1,2,3 01-04 05-18 120 600 mA 01,02 2.4 03,04 5.0 05-08, 12-15 60 Standby current ISBCS = VCC, OE = VIH, f = 5 MHz CMOS compatible VCC = +5.5 V dc 1,2,3 09-11, 16-18 80 mA Input leakage current ILIVCC= +5.5 V dc, VIN= GND or VCC1,2,3 All 10 A Ou

48、tput leakage current ILOCS = VIH, OE = VIH, VOUT= GND or VCC1,2,3 All 10 A VCC = +4.5 V dc, IOL= +2.1 mA 01-07, 12-14 0.4 Output low voltage VOLVCC = +4.5 V dc, IOL= +8.0 mA 1,2,3 08-11, 15-18 0.4 V VCC = +4.5 V dc, IOH= -1.0 mA 01-07, 12-14 2.4 Output high voltage VOHVCC = +4.5 V dc, IOH= -4.0 mA 1,2,3 08-11, 15-18 2.4 V DATA RETENTION Data retention supply voltage VDRCS VCC- 0.2 V dc 1,2,3 All 2.0 5.5 V 01-04 1.6 05-11, 18 11.6 Data retention current ICCDR1VCC= +3.0 V dc 1,2,3 12-17 20.