DLA SMD-5962-87703 REV A-2006 MICROCIRCUIT MEMORY DIGITAL BIPOLAR 256 X 9-BIT RAM MONOLITHIC SILICON《硅单块 256X9比特随机存取存储器 双极数字主储存器微型电路》.pdf
《DLA SMD-5962-87703 REV A-2006 MICROCIRCUIT MEMORY DIGITAL BIPOLAR 256 X 9-BIT RAM MONOLITHIC SILICON《硅单块 256X9比特随机存取存储器 双极数字主储存器微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-87703 REV A-2006 MICROCIRCUIT MEMORY DIGITAL BIPOLAR 256 X 9-BIT RAM MONOLITHIC SILICON《硅单块 256X9比特随机存取存储器 双极数字主储存器微型电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update, part of 5 year review. ksr 06-09-28 Raymond Monnin The original first page of this drawing has been replaced. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARE
2、D BY Rick C. Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Robert P. Evans AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE
3、 87-11-09 MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, 256 X 9-BIT RAM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-87703 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E642-06 .Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA
4、RD MICROCIRCUIT DRAWING SIZE A 5962-87703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-3
5、8535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-87703 01 W A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Dev
6、ice type Generic number Circuit function Access time 01 82S212 2304-bit bipolar RAM (three-state) 70 ns 02 93479 2304-bit bipolar RAM (three-state) 60 ns 03 93479 2304-bit bipolar RAM (three-state) 45 ns 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Out
7、line letter Descriptive designator Terminals Package style W GDIP1-T22 or CDIP2-T22 22 dual-in-line package 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage +7 V dc maximum Input voltage. +5.5 V dc maximum Storage temperatu
8、re range -65C to +150C Maximum power dissipation (PD) 1.05 W 1/ Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . (See MIL-STD-1835) Junction temperature (TJ). +200C 1.4 Recommended operating conditions. Supply voltage range (VCC). +4.75 V dc to +5.25 V dc Ca
9、se operating temperature range (TC) . -55C to +125C Minimum high level input voltage . 2.0 V dc Maximum low level input voltage 0.8 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing t
10、o the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - T
11、est Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assi
12、st.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Must withstand the added PDdue to short circuit test (e.g., IOS).Provided by IHSNot for ResaleNo reproduction or networking per
13、mitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87703 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited he
14、rein, the text of this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, append
15、ix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML pro
16、duct in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or fun
17、ction of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physica
18、l dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Truth table. The truth table shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on fi
19、gure 3. 3.2.4 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature rang
20、e. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN liste
21、d in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indica
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596287703REVA2006MICROCIRCUITMEMORYDIGITALBIPOLAR256X9BITRAMMONOLITHICSILICON 硅单块 256 X9 比特 随机存取存储器

链接地址:http://www.mydoc123.com/p-699110.html