DLA SMD-5962-92042 REV F-2005 MICROCIRCUIT LINEAR CMOS MULTIPLEXER MONOLITHIC SILICON《硅单块 多路调制器 互补金属氧化物半导体 直线式微型电路》.pdf
《DLA SMD-5962-92042 REV F-2005 MICROCIRCUIT LINEAR CMOS MULTIPLEXER MONOLITHIC SILICON《硅单块 多路调制器 互补金属氧化物半导体 直线式微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-92042 REV F-2005 MICROCIRCUIT LINEAR CMOS MULTIPLEXER MONOLITHIC SILICON《硅单块 多路调制器 互补金属氧化物半导体 直线式微型电路》.pdf(15页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Redrawn with changes. Add case outline X. Technical and editorial changes throughout. 95-03-23 M. A. FRYE D Add device types 03 and 04. 95-04-28 M. A. FRYE E Make changes to figure 3, figure 4, and table II. -ro 98-06-11 R. MONNIN F Drawing updat
2、ed to reflect current requirements. -rrp 05-01-04 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS STANDARD MI
3、CROCIRCUIT DRAWING CHECKED BY SANDRA ROONEY COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, CMOS, MULTIPLEXER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93
4、-03-11 AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-92042 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E062-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBU
5、S, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available an
6、d are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92042 01 M E A Federal stock class designator RHA designator (see 1.2.1) Device type
7、(see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked
8、devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 DG408A 8-channe
9、l analog multiplexer 02 DG409A Dual 4-channel analog nmultiplexer 03 ADG408 8-channel analog multiplexer 04 ADG409 Dual 4-channel analog multiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device r
10、equirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated i
11、n MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CDFP4-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-P
12、RF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEV
13、EL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage between V+ and V- 44 V dc Supply voltage between V- and GND. 25 V dc Digital input range VS, VDto V- 2/ . (V-) -2.0 V dc to (V+) +2.0 V dc or 20 mA, whichever occurs first Current (any terminal except for S or D) cont
14、inuous 30 mA Current (S or D) continuous . 20 mA Current (S or D) pulsed, 1 ms, 10% duty cycle 40 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds maximum) +300C Junction temperature (TJ). +175C Power dissipation (PD): 3/ Case outline E at TA= +75C 900 mW Case outli
15、nes F and X at TA= +70C 485 mW Case outline 2 at TA= +75C. 750 mW Thermal resistance, junction-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Positive supply voltage (V+). +15 V dc Negative supply volatge (V-) -15 V dc Digital input LOW voltage (VAL) 2.4 V dc Ambient operating temp
16、erature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited
17、 in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
18、 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Des
19、k, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulat
20、ions unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Signals on SX, DX, or INXexceeding V+ or V- will be clamped by inter
21、nal diodes. Limit forward diode current to the maximum current rating. 3/ For case outline 2, derate above +75C linearly at 10 mW/C. For case outline E, derate above +75C linearly at 12 mW/C. For case outlines F and X, derate above +70C linearly at 6.06 mW/C. Provided by IHSNot for ResaleNo reproduc
22、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92042 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes
23、 Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M sha
24、ll be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-3
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