DLA SMD-5962-91677 REV A-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 8K X 9 DUAL PORT FIFO MONOLITHIC SILICON《硅单块 8K X 9双门先进先出 互补金属氧化物半导体 数字主储存器微型电路》.pdf

《DLA SMD-5962-91677 REV A-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 8K X 9 DUAL PORT FIFO MONOLITHIC SILICON《硅单块 8K X 9双门先进先出 互补金属氧化物半导体 数字主储存器微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91677 REV A-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 8K X 9 DUAL PORT FIFO MONOLITHIC SILICON《硅单块 8K X 9双门先进先出 互补金属氧化物半导体 数字主储存器微型电路》.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update, part of 5 year review. ksr 07-01-29 Joseph Rodenbeck THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV A A A A A A A A A A A A A A OF SHE

2、ETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeffery D. Bowling DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 CHECKED BY Raymond Monnin http:/www.dscc.dla.mil APPROVED BY Michael A. Frye STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

3、AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-09-25 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 DUAL PORT FIFO, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-91677 AMSC N/A REVISION LEVEL A SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E015-07 Provided by IHSNot for ResaleNo reprodu

4、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91677 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting

5、of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.

6、2 PIN. The PIN is as shown in the following example: 5962 - 91677 01 M X A | | | | | | | | | | | | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1

7、 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A d

8、ash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 8K x 9 dual port CMOS FIFO 80 ns 02 8K x 9 dual port CMOS FIFO 50 ns 03 8K x 9 dual port CMOS FIFO 30 ns 1.2.3 Device c

9、lass designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF

10、-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line Y CDIP3-T28 or GDIP4-T28

11、 28 Dual-in-line Z CQCC1-N32 32 Rectangular leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulle

12、tin at the end of this document and will also be listed in MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91677 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3

13、 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage range- -0.5 V dc to +7.0 V dc DC output current - 50 mA Storage temperature range- -65C to +150C Maximum power dissipation (PD) - 2.0 W Lead temperature (soldering, 10 seconds) - +260C Thermal resistance, junction-to-case (JC): C

14、ases X, Y, and Z - See MIL-STD-1835 Junction temperature (TJ)- +150C 3/ 1.4 Recommended operating conditions. Supply voltage range (VCC)- 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) - 2.2 V dc 4/ Maximum low level input voltage (VIL) - 0.8 V dc 5/ Case operating temperature range (TC

15、)- -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicita

16、tion or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF D

17、EFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil;quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue,

18、 Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. ELECTRONIC INDUSTRIES

19、 ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organ

20、izations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performanc

21、e and affect reliability. 3/ Maximum junction temperature may be increased to +175C during burn-in and steady-state life. 4/ For XI input, VIH= 2.8 V dc 5/ 1.5 V dc undershoots are allowed for 10 ns once per cycle. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

22、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91677 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this

23、drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as s

24、pecified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-

25、JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case

26、outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation

27、 parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall b

28、e the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasib

29、le due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in acc

30、ordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of comp

31、liance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be liste

32、d as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535

33、and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of micro

34、circuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device

35、 class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for devic

36、e class M. Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91677 DEFENSE SUPPLY CENTER

37、 COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM)

38、plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PR

39、F-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria

40、for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revis

41、ion level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-883

42、, test condition D for circuit, see 4.2.1b herein). c. Interim and final electrical parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as spec

43、ified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or pr

44、eparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additi

45、onal screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be pe

46、rformed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91677 DEFENSE SUPPLY CENTER COL

47、UMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limit Test Symbol Conditions 1/ -55C TC +125C VCC= 4.5 V to 5.5 V unless otherwise specified Group A subgroups Device type Min Max Unit Input leakage current ILIVIN=0.4 V to VCC1,2,3 All -10 10 A Output leakage current ILOR