DLA SMD-5962-91667 REV G-2011 MICROCIRCUIT LINEAR ADJUSTABLE 1 A POSITIVE VOLTAGE REGULATOR MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline Y, which is a 16 lead flat pack. Make changes to 1.2.4, 1.3, and figure 1. - ro 99-02-10 R. MONNIN B Make change to dropout voltage test as specified in table I. - ro 99-08-13 R. MONNIN C Make change to short circuit current test
2、 as specified in table I. - ro 01-02-05 R. MONNIN D Add device class V devices and table IIB. - ro 01-05-01 R. MONNIN E Drawing updated to reflect current requirements. -rrp 06-12-04 R. MONNIN F Add device type 02 tested at low dose rate. Add paragraphs 1.5, 3.2.3, and 4.4.4.1. Add one footnote to T
3、able IIB. Make changes to 1.2, 1.2.2, Table I, and figure 2. Add paragraph 3.1.1 and microcircuit die appendix A. - ro 09-04-21 J. RODENBECK G Add device type 03 and 04. Add footnote to paragraph 1.2.4. Make changes to paragraphs 1.3, 1.5, A.1.2, A.1.2.2, Table I, and Figure 2. Make change to table
4、IIB footnote and title. 11-12-13 C. SAFFLE REV SHET REV G G G G G G G SHEET 15 16 17 18 19 20 21 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla
5、.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, ADJUSTABLE, 1 A, POSITIVE VOLTAGE REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 97-04-25
6、 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-91667 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E097-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91667 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3
7、990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected
8、 in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 91667 04 V Y A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Devic
9、e class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the
10、MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM2941 Adjustable, 1 amp, positi
11、ve voltage regulator 02 LM2941 Radiation hardened adjustable, 1 amp, positive voltage regulator 03 LM2941 Adjustable, 1 amp, positive voltage regulator 04 LM2941 Radiation hardened adjustable, 1 amp, positive voltage regulator 1.2.3 Device class designator. The device class designator is a single le
12、tter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification t
13、o MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-lineX See figure 1 4 Flange mount Y 1/ GDFP1-G16 16 Flat pack with gull wing leads _ 1/ For c
14、ase outline letter Y, device types 01 and 02 package material is aluminum nitride and the device types 03 and 04 package material is aluminum oxide. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91667 DLA L
15、AND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 2/ Input voltage (VIN) (survival vol
16、tage 100 ms) . 60 V Internal power dissipation Internally limited 3/ Maximum junction temperature (TJ) 150C Storage temperature range . -65C TJ +150C Lead temperature (soldering, 10 seconds) 300C Thermal resistance, junction-to-case (JC): Device types 01 and 02: Case E . 3C/W Cases X and Y . 5C/W De
17、vice types 03 and 04: Case Y 1/ 13C/W Thermal resistance, junction-to-ambient (JA): Device types 01 and 02: Case E . 73C/W Case X . 40C/W Case Y . 122C/W Device types 03 and 04: Case Y 1/ . 136C/W (still air) 87C/W (linear feet per minute air flow) 1.4 Recommended operating conditions. Maximum input
18、 voltage (VIN) . 26 V Ambient operating temperature range (TA) . -55C TA +125C 1.5 Radiation features. Device types 02 and 04: Maximum total dose available (dose rate = 10 mrads (Si)/s) . 100 krads (Si) 4/ The manufacturer supplying RHA parts on this drawing has completed Lot Acceptance testing at L
19、ow Dose Rate (LDR) (10 mrad/s) on these RHA marked parts. The Low Does Rate testing that was performed demonstrates that these parts from the lot tested do not have an Enhanced Low Dose rate Sensitivity as defined by Method 1019, condition D. Lot Acceptance Testing at LDR will continue to be perform
20、ed on each wafer or wafer lot until characterization testing has been performed in accordance with Method 1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested device was ELDRS, the part number will be changed to 02 and 04 devices to disti
21、nguish the 4 parts. _ 1/ For case outline letter Y, device types 01 and 02 package material is aluminum nitride and the device types 03 and 04 package material is aluminum oxide. 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum
22、 levels may degrade performance and affect reliability. 3/ The maximum power dissipation must be derated at elevated temperatures and is dictated by maximum junction temperature, package junction to ambient thermal resistance, and ambient temperature. The maximum allowable power dissipation at any t
23、emperature is PDmaximum = (TJmaximum - TA) / JAor the number given in the absolute maximum ratings, whichever is lower. 4/ For device types 02 and 04, these parts have been tested and do not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for
24、 the conditions specified in MIL-STD-883, test method 1019, conditions A and D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91667 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 D
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