DLA SMD-5962-90705-1991 MICROCIRCUITS DIGITAL HIGH SPEED CMOS BCD DECADE COUNTER ASYNCHRONOUS RESET MONOLITHIC SILICON《硅单块 异步复位二-十进制译码计数器 高速互补金属氧化物半导体数字微型电路》.pdf

《DLA SMD-5962-90705-1991 MICROCIRCUITS DIGITAL HIGH SPEED CMOS BCD DECADE COUNTER ASYNCHRONOUS RESET MONOLITHIC SILICON《硅单块 异步复位二-十进制译码计数器 高速互补金属氧化物半导体数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90705-1991 MICROCIRCUITS DIGITAL HIGH SPEED CMOS BCD DECADE COUNTER ASYNCHRONOUS RESET MONOLITHIC SILICON《硅单块 异步复位二-十进制译码计数器 高速互补金属氧化物半导体数字微型电路》.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、SMD-5762-90705 59 W 999999b OUU4L7 3 I LTR DESCRIPTION DATE (YR-MO-DA) APPROVED AMSC NIA I I SHEET 1 OF 17 I US. GOVIRHMIHI PRINTING OFFICE: 1987 - 748-17.916091 I DESC FORM 193 SEP a7 5962-El63 DISTRIBUTION STATEMENT A. Approved lor public release; dlslrlbullon IC unlimited. Provided by IHSNot for

2、ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 SCO e. This drawing forms a part of a one part - one part number documentation system see 6.6 herd Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space appl

3、ication device classes S and VI, and a choice of cace outlines and lead finishes are available and are ref?ected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, IProvisions for the use of MIL-STD-8

4、83 in conjunction with compliant non-JAN devices“. When available, a chatice of radiation hardness assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: O1 M E X 7- 7- t I l- I I I I Device Cace Led 1 Uevice t $ ede ra 1 stock class designator

5、type cl ass outline finish designator (See 1.2,l) (See 1.2.2) desjgnator (See 1.2.4) (See 1.2.5) (See 1.2.3) I -RRK Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. Device classes M, B, and S RHA marked devices shall meet the BIIL-M-38510 specified RHA levels and shall be marked w

6、ith the appropriate RHA designator. Revice classes Q and Y RHA marked devices shatl meet the MIL-1-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-k indicates a non-RHA device. 1.2.2 Device type(s1. The device type(s) shall identify the circuit function a

7、s follows: Device type Generic number Circuit function 01 54HCT160 BCD decade counter, asynchronous reset, TTL compatible inputs 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: WE A STANDARDIZED Device class Devi

8、ce requirements documentation M 5962-90705 Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Q or Y Certification and qualification to MIL-M-38510 Certifkation and qualification to MIL-1-38535 1.2.4 Case outline(s). For dev

9、ice classes M, B, and S, case outline(s) shall meet the requirements in appendix C of MIL-M-38510 and as listed below. outline(s) shall meet the requirements of MIL-1-38535, appendix C of MIL-M-38510, and as listed bel ow. For device classes Q and Y, case Out1 ine 1 etter E 1.2.5 Lead finish. The le

10、ad finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-3853s f or classes Q and V. Finish letter “X“ chal2 not be marked on the microcircuit or its packaging. The IX“ designation is for use in specifications when lead finfshes A, B, and C are considered acceptable and i nter

11、changeable without preference, Case outline D-2 116-lead, ,840“ x ,310“ x .200“), dual-in-line package Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.3 Absolute maximum ratings. L/ SIZE A STANDARDIZED Supply voltage range (VCC) - - - - - - - - - -

12、 - - DC input voltage - - - - - - - - - - - - - - - - - DC output voltage - - - - - - - - - - - - - - - - Clamp diode current - - - - - - - - - - - - - - - - OC output current (per pin) - - - - - - - - - - - - DC Vcc or GND current (per pin) - - - - - - - - - - Storage temperature range - - - - - -

13、- - - - - - - Maximum power dissipation (PD) - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - Thermal resistance, junction-to-case (0JC)- - - - - Junction temperature (TJ) - - - - - - - - - - - - - 5962-90705 1.4 Recommended operating conditions. Supply voltage (VC ) - - - - -

14、- - - - - - - - - - input voltage (V j - - - - - - - - - - - - - - - Output voltage (#UT) - - - - - - - - - - - - - - - Case operating temperature (TC) - - - - - - - - - - Input rise and fall time (tr, tf): vcc = 4.5 v, 5.5 v Minimum setup time, Pn to CP ( tsl): Minimum sepp time, PE to CP, TE to CP

15、 (ts2): Minimum setup time, SPE to CP (ts3): Minimum pulse width, CP (61). Minimum puise width, MR (tw2): Minimum hold time, Pn to 6 fthl): Minimum hold time, TE to 1.3 V 0.3 V GNO TE OR PE 3.0 V 2.7 V 1.3 V 0.3 V GND CP . NOTE: For all inputs tr, tf 5 6 ns. FIGURE 5. Test circuit and switching wave

16、forms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I .A ANY OUTPUT TE TC - MR ANY OUTPUT CP tPLH3 -+ 3.0 V 2.7 V 1.3 v 0.3 V - GND b+ tPHL3 3.0 V 2.7 V 1.3 V 0.3 V GNO c). J VOH Pt f 90% 1.3 V 10% VOL REC -2.7 v NOTE: For all inputs tr, tf 5 6 ns

17、. FIGURE 5. Test circuit and switching waveforms - Continued. STANDARDIZED SIZE 5962-90705 A MILITARY DRAWING I_ DEFENSE ELECTRONiCS SUPPY CME SHEET DAYTON. OH0 45444 I I I 1Z 1 U. 8. GOV6RNMENT PRINTING QFFICE IOOP-549-7.49 DESC. FORM 193A SEP %7 Provided by IHSNot for ResaleNo reproduction or netw

18、orking permitted without license from IHS-,-,-c D SND-5762-90705 59 9999996 0004170 4 = 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device class M, sampling and inspection procedures shall be in iccordance with section 4 of MIL-M-38510 to the extent specified in MIL-STD-883 (see

19、 3.1 herein), or device classes B and S, sampling and inspection procedures shall be in accordance with IIL-h-38510 and method 5005 of MIL-STD-883, except as modified herein. For device classes Q and Y, iampling and inspection procedures shall be in accordance with MIL-1-38535 and the device ianufac

20、turers QM plan. 4.2 Screening. For device class M, screening shall be in accordance with method 5004 of IIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For levice classes B and S, screening shall be in accordance with method 5004 of MIL-STD-883, and shall

21、le conducted on all devices prior to qualification and quality conformance inspection. For device :lasses Q and V, screening shall be in accordance with MIL-1-38535, and shall be conducted on all levices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for devi

22、ce classes M, B, and S. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, 6, C, or D. For device class M, the test circuit shall be submitted to DESC-ECS for review with the certificate of compliance. For device classes B and S, the test circuit shall be submitted to the qualifying

23、activity. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature or approved alternatives shall be as specified in the

24、device manufacturers QM plan in accordance with MIL-1-38535. The burn-in test circuit shall be submitted to DESC-ECS with the certificate of compliance and shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-1-38535. Interim and final electrica

25、l test parameters shall be as specified in table IIA herein. For device class M, interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. c. Additional screening for device class Y beyond the requirements of device class Q shall be as specified in appen

26、dix B of MIL-1-38535 and as detailed in table II6 herein. b. 4.3 Qual i fication inspection. 4.3.1 Qualification inspection for device classes B and S. Qualification inspection for device lasses B and S shall be in accordance with MIL-M-38510. pecified in method 5005 of MIL-STD-883 and herein for gr

27、oups A, B, C, D, and E inspections (see .4.1 throuyh 4.4.5). 4.3.2 Qualification ins ection for device classes Q and V. Qualification inspection for device lasses Q and V shall be i: accordance with MIL - I 38535 . Inspections to be performed shall be those pecified in MIL-1-38535 and herein for gro

28、ups A, B, C, D, and E inspections (see 4.4.1 through .4.5). Inspections to be performed shall be those SIZE 5962-90705 STANDARDIZED MILITARY DRAWING A DEFWSE ELECTRONES SUPPLY CENTER REWSiN LEVEL SHEET 13 DAYTON. OHD 45444 I I I U. 8. GOVERNMENT PRINTING OFFICE 1990-649-249 DESC FORM 193A SEP 87 Pro

29、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- - SMD-57b2-90705 59 m 9999996 0004LL b = t TABLE TIA. Electrical test requirements. L/ i/ 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. For device class W, subgroups 7 a

30、nd 8 tests shall be sufficient to verify the truth table. For device classes 6 and S, subgroups 7 and 8 tests shall be sufficient to verify the truth table as approved by the qualffyiny activity. For device classes Q and Y, subgroups 7 and 8 shall include verifying the functionality of the device; t

31、hese tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). SIZE A 5962- 907 05 STANDARDIZD MILITAM DRAWING 14 WENSE ELEcmoNm SUPPtV cm SHEET DAWDN, or110 45444 s I 1 I I I t Subgroups I - Subgroups I. 1 Test requirements I (per method 5005, tabTe I) L

32、(per MIL-i-38535, I I I I table.111) 1 I I I r I I I Device I Device I Device I Device I Device I I 1 clais I class I class I ctass I class I 1s 19 IV I I I I I I Interim electrical t i1 il il I parameters (see 4.2) I I I I I I I Il I I Final electrical i1*,2,3,7, I 1,2,3, i 1,2,3, i 1,2,3, i 1,2,3,

33、 i I parameters (see 4.2) l8,9,3.0,11 17, 9,10,11 7,9,10,11 I7,9,10,11 I7,9,10, 11 I I 1 I F t I I Group A test i .1,2,3,4,7, i 1,2,3,4,7, i 1,2,3,4, 7,i1,2 ,3,4,7, i 1,2,3,4,7, i I requirements (see 4.4) fS,9,lO,li 18,9,lO,li lS,9,10,11 l8,9,10,11 I8,9,10,11 I I I I I I I i Group E end-point electr

34、icat 1 i i 1,2,3, i i 1,2,3, i I parameters (see 4.4) I I I 9,10,11 I I 9,10,11 I I I I I Group C end-point electrical I 1,2,3 I 1,2,3 i i 1,2,3 I I I parameters (see 4.4) c I I t I I I I I Group 0 end-paint electrical i 1,2,3 i 1,2,3 i 1,2,3 i 1,2,3 i 1,2,3 i 1 Group E end-point electricai I 1,7,9

35、I 1,7,9 I 1,7,9 1 1,7,9 1 l,f,9 1/ BTank spaces indicate tests are not applicable. - * indicates PDA applies to subgroup 1. I parameters (see 4.4) I I I I I I I parameters (see 4.4) 1 1 I t I I I Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59

36、62-90705 59 9 999999b 0004392 4 TABLE IIB. Additional screening for device class V. I I Test I I I I IParticle impact I 2020 I 100% I I noise detection I I I I I I IInternal visual I 2010, condition A or I 100% I I I approved al ternate I I I Nondestructive I 2023 or I 100% I I bond pull 1 approved

37、al ternate I I I I 1015, tofal of 240 hours I 100% I I Radiographic I 2012 I 100% I MIL-STD-883, test method r Lot requirement I I I I Reverse bias burn-in 1015 I 100% I IBurn-jn I at +125 C I I I I I c. Subgroup 4, (CIN and CPD measurements) shall be measured only for the initial test and after pro

38、cess or design changes which may affect capacitance. Capacitance shall be measured between the designated terminal and GND at a frequency of 1 MHz, Test all applicable pins on five devices with zero failures. d. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group B

39、 inspection. The group B inspection end-point electrical parameters shall be as ipecified in table IIA herein. 4.4.3 Grou C inspection. The group C inspection end-point electrical parameters shall be as jpecifie in Fable IIA h erein, 4.4.3.1 Additional criteria for device classes M, B, and S, Steady

40、-state life test conditions, iethod 1005 of MIL-STD-883: a. Test condition A, 8, C, or D. For device class M, the test circuit shall be submitted to DESC-ECS for review with the certificate of compliance. For device classes B and S, the test circuit shall be submitted to the qualifying activity. b.

41、TA = +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.3.2 Additional criteria for device classes Q and V. The steady-state life test duration, ;est condit7on and test temperature or approved alternatives shall be as specified in the device ianufac

42、turers QM plan in accordance with MIL-1-38535. The steady-state life test circuit shall be ubmitted to DES-ECS with the certificate of compliance and shall be under the control of the levice manufacturers TRB in accordance with MIL-1-38535. 4.4.4 Group D inspection. The group D inspection end-point

43、electrical parameters shall be as ipecified in table IIA herein. SIZE 5962-9 07 05 STANDARDIZED MILITARY DRAWING A I SHEET 15 I I nEviSIONLEVEL DEFENSE ELECTRONICS SUPPLY CENTER RAY“, OHIO 45444 ESC FORM 193A SEP a7 t u. ai GOVERNMENT PRINTINO OFFICL tae0-4n-aa1 Provided by IHSNot for ResaleNo repro

44、duction or networking permitted without license from IHS-,-,-t SIZE A STANDARDIZED SMD-59b2-90705 59 W 999999b IJ00LlL93 T W 5962-90705 4,4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as *adiation hardness assured (see 3.5 herein). 4, Da Ra and H and for

45、 device class M shall be M and D. RHA quality conformance inspection sample Lests shall be performed at the RHA level specified in the acquisition document. RHA levels for device classes 6, Sa Q, and Y shall be a. b. C. d. e. f. 9. RHA tests for device classes B and S for levels Ma Da R, and H or fo

46、r device class M for levels M and D shall be performed through each level to determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for initial qualification and after design or process changes which may affect the RHA performance of the device. End-point

47、electrical parameters shall be as specified in table IIA herein. Prior to total dose irradiation, each selected sample shall be assembled in its qualified package. It shall pass the specified group A electrical parameters in table I for subgroups specified in table IIA herein. For device classes Ma

48、Ba and Sa the devices shall be subjected to radiation hardness assured tests as specified in MIL-M-38510 for RHA level being tested, and meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C *5 percent, after exposure. Prior to and during total dose irradi

49、ation testing, the devices shall be biased to establish a worst case condition as specified in the radiation exposure circuit. For device classes M, 6, and S, subgroups 1 and 2 in table Va method 5005 of MIL-STD-883 shall be tested as appropriate for device construction. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supyl i ed. 5. PACKAGING 5.1 Packaging requi