DLA SMD-5962-89550 REV G-2010 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT EXCLUSIVE OR GATE MONOLITHIC SILICON.pdf

《DLA SMD-5962-89550 REV G-2010 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT EXCLUSIVE OR GATE MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-89550 REV G-2010 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT EXCLUSIVE OR GATE MONOLITHIC SILICON.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R084-93. 93-02-26 Monica L. Poelking B Add vendor CAGE F8859. Add device class V criteria. Changes to table I. Editorial changes throughout. - gap 00-01-25 Raymond Monnin C Add case outline X. Add delta limits

2、for class V devices. Editorial changes throughout - gap. 00-07-31 Raymond Monnin D Change the delta limit for the VOHparameter in table III. Update boilerplate to latest MIL-PRF-38535 requirements. - CFS 01-01-17 Thomas M. Hess E Add section 1.5, radiation features. Update the boilerplate to include

3、 radiation hardness assured requirements. Editorial changes throughout. - jak 03-12-09 Thomas M. Hess F Update the radiation features in section 1.5. Add SEP limits table IB. Update boilerplate paragraphs to current MIL-PRF-38535 requirements jak. 10-06-16 Thomas M. Hess G Add die for device type 01

4、 and die appendix A. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. MAA. 10-11-24 Thomas M. Hess REV SHEET REV G G G G G G G G SHEET 15 16 17 18 19 20 21 22 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Christop

5、her A. Rauch DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT EXCLUSIVE OR

6、 GATE, MONOLITHIC SILICON DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-02-28 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-89550 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E033-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

7、CIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZEA 5962-89550 REVISION LEVEL G SHEET2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

8、 A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 596

9、2 - 89550 01 C A Federal RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 F 89550 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish design

10、ator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MI

11、L-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC86 Quad 2-input exclusive OR g

12、ate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN

13、and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Pro

14、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZEA 5962-89550 REVISION LEVEL G SHEET3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in

15、MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack X CDFP3-F14 14 Flat pack2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-

16、38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode

17、current (IIK, IOK) . 20 mA DC output current (per output pin) 50 mA DC VCCor GND current (per output pin) . 50 mA Maximum power dissipation (PD) 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-

18、STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fal

19、l time rate (tr, tf): VCC= 3.6 V and 5.5 V 0 to 8 ns/V 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 Krads (Si) Single event effects (SEE): effective LET, no SEL 93 MeV-cm2/mg effective LET, no SEU 93 MeV-cm2/mg 1/ Stresses above the absolute maximum ratin

20、g may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case

21、temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and batte

22、ry back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCCat 20 A, VOL 30% VCCat 20 A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC

23、UIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZEA 5962-89550 REVISION LEVEL G SHEET4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent s

24、pecified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Sta

25、ndard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.m

26、il/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docu

27、ments cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.

28、org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however

29、, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers

30、Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Mi

31、crocircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A a

32、nd herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic

33、diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND

34、AND MARITIME COLUMBUS, OHIO 43218-3990 SIZEA 5962-89550 REVISION LEVEL G SHEET5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiri

35、ng activity upon request. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table IA and shall apply over the full case operating te

36、mperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers P

37、IN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q

38、 and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for dev

39、ice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device cla

40、ss M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and MaritimeVA prior to listing as an approved source of supply for this drawing shall

41、 affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V

42、in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime of change of product (see 6.2 herein) involving dev

43、ices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicabl

44、e required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by

45、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZEA 5962-89550 REVISION LEVEL G SHEET6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 te

46、st method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V Unless otherwise specified Device type and Device class VCCGroup A subgroups Limits 4/ Unit Min Max Positive input clamp voltage 3022 VIC+For input under test, IIN= 1.0 mA All Q, V 0.0 V 1 0.4 1.5 V Negative input clamp voltag

47、e 3022 VIC-For input under test, IIN= -1.0 mA All Q, V Open 1 -0.4 -1.5 V High level output voltage 3006 VOH 5/ VIN= VIHminimum or VILmaximum IOH= -50 A All All 3.0 V 1, 2, 3 2.9 V 4.5 V 4.4 5.5 V 5.4 VIN= VIHminimum or VILmaximum IOH= -12 mA All All 3.0 V 1 2.56 2, 3 2.40 VIN= VIHminimum or VILmaxi

48、mum IOH= -24 mA All All 4.5 V 1 3.86 2, 3 3.70 5.5 V 1 4.86 2, 3 4.70 VIN= VIHminimum or VILmaximum IOH= -50 mA All All 5.5 V 1, 2, 3 3.85 Low level output voltage 3007 VOL 5/ VIN= VIHminimum or VILmaximum IOL= 50 A All All 3.0 V 1, 2, 3 0.1 V 4.5 V 0.1 5.5 V 0.1 VIN= VIHminimum or VILmaximum IOL= 12 mA All All 3.0 V 1 0.36 2, 3 0.50 VIN= VIHminimum or VILmaximum IOL= 24 mA All All 4.5 V 1 0.36 2, 3 0.50 5.5 V 1 0.36 2, 3 0.50 VIN= VIHminimum or VILmaximum IOL= 50 mA All All 5.5 V 1, 2, 3 1.65 High level input voltage VIH6/