DLA SMD-5962-86088-1986 MICROCIRCUITS DIGITAL GRAPHICS DISPLAY CONTROLLER MONOLITHIC SILICON《硅单块 绘图显示控制器 数字微型电路》.pdf
《DLA SMD-5962-86088-1986 MICROCIRCUITS DIGITAL GRAPHICS DISPLAY CONTROLLER MONOLITHIC SILICON《硅单块 绘图显示控制器 数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-86088-1986 MICROCIRCUITS DIGITAL GRAPHICS DISPLAY CONTROLLER MONOLITHIC SILICON《硅单块 绘图显示控制器 数字微型电路》.pdf(24页珍藏版)》请在麦多课文档分享上搜索。
1、DESC-DWG-BbOBB 57 W 7777775 00059bB L m I i -1 -I Defense Electronics Supply Center Dayton, Ohio Original date of drawing: 27 October 1986 1 REVISIONS D ESC R i PTiO N I AMSC NIA REV PAGE 1 OF 24 I 5962-EO90 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. DESC FORM
2、193 MAY 6 - Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- I- - DESC-DWG-BbOBB 57 II 7777775 0005?bS 3 M SIZE CODE IDENT. NO. MILITARY DRAWING A 14933 1. SCOPE 1.1 Scope. This drawing describes the device requirements for class 6 microcircuits in a
3、ccordance with 112,1 of MIL-STO-883, Provisions for the use of MIL-STO-883 in conjunction with compliant non-JAN devices“. 1.2 Part number. The complete part number shall be as shown in the following example: T I I I s 5962086088 o1 I 7 I I I I I I I I E- Lead finish Per (1.2.21 MIL-M-38510 1.2.1 De
4、vice type. The device type shall identify the circuit function as follows: Device type Generic number Circuit function o1 82720 Graphics display controller 1,2.2 Case outline The case outline shall be as designated in appendix C of MIL-M-38510, and as fol 1 ows: DWG NO. 5962-86088 Case outline Outli
5、ne letter Q 0-5 (4O-leadS 9/16“ X 2-1/6“1 dual -in-1 ine package DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 1.3 Absolute maximum ratings. lJ Case temperature under bias - - - - - - - - - - - Storage temperature - - - - - - - - - - - - - - - Voltage on any pin with respect to ground - - - - Power
6、 dissipation (Po)- - - - - - - - - - - - - - Lead temperature- - - - - - - - - - - - - - - Thermal resistance, junction-to-case jc)- - - - Junction temperature (TJ) - - - - - - - - - - - - REV PAGE 2 1.4 Recommended operating condi tionc. Supply voltage (Vccl- - - - - - - - - - - - - - - Input volta
7、ge e - - - - - - - - - - - - - - - Input high voltage- - - - - - - - - - - - - - - - Input high voltage on DACK- - - - - - - - - - - - Clock input low voltage - - - - - - - - - - - - - Clock input high voltage- - - - - - - - - - - - - Case operating temperature (TC) - - - - - - - - Clock frequency -
8、 - - - - - - - - - - - - - - - -55C to +125“C -65C to +15OoC -0.5 v to 7 v 1.5 W +3OO0C _ - See MIL-M-38510, +20O0C appendix C 4.5 V dC to 5.5 V dC -0.5 V dC to 0.8 V dC 2.2 V dc to VCC +0.5 V dc 2.5 V dc ta V c t0.5 V dc -0.5 V dc to 6.6 V dc 3.5 V dc to V +0.5 V dc 0.5 MHz to 4 kkz -55C to +125“C
9、I I I I I I DECC FORM 193A FE6 66 I - - -a- Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DESC-DWG-6088 57 POB 7777775 0005770 T U MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER 2. APPLICABLE DOCUMENTS 2.1 Government specification and standard,
10、 Unless otherwise specified, the following specification and standard, of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPEC IF I CATION MILITARY MIL-M-38510
11、 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STO-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as
12、directed by the contracting activity. 1 references cited herein, the text of this drawing shall take precedence. 2.2 Order of precedence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of In the event of a conflict between the text of this d
13、rawing and the YIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. A 14933 5962-86088 I I 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-M-38510
14、and herein. DAYTON, OHIO I 3.2.1 Design documentation. The design documentation shall be in accordance with NIL-M-38510 and, unless otherwise specified in the contract or purchase order, shall be retained by the manufacturer but be available for review by the acquiring activity or contractor upon re
15、quest. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.4 Switching waveforms. The switching waveforms shall be as specified on figure 3. 3.2.5 Case outline. The case outline shall be
16、 in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherwise specified, the electrical performance charcteristics are as specified in table I and apply over the full recommended case operating temperature range. 3.4 Marking. Marking shall be in accordance with NIL-S
17、TD-883 (see 3.1 herein). narked with the part number listed in 1.2 herein. In addition, the manufacturers part may also be narked as listed in 6.4 herein. The part shall be REV PAGE 3 I SIZE I CODE IDENT. NO. I DWG NO. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
18、nse from IHS-,-,-TABLE I. El ectrf cal performance characteristics. I 1 I I I I -55C 5 TC +125“C I subgroups I ax I I vcc = 57 110% I I Min I M I I I I I I IIoL = 2*2 I I I I I 1,2s3 I I I Test I Symbol I Condi tions I Group A I Limits I I 1 I I 0.45 I V Output low voltage IVOL I I I k Output high v
19、oltage /VOH /IOH I -400 NA i 1,2,3 I 2.4 I IV I I I I 0.8 I v input low voltage VIL I I 1 I I I I I I I I I I I I I I I I I I 1,2,3 1-0.5 I 0.6 I V t 1 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I ITc = +25“C I I I I I I I I I I I I I I l ITc i: +25C I I I I IInput high voltage /VIH
20、 I L 1,2,3 I 2.2 I IV I I I I I Input high voltage IVIH I I 1,2,3 I 2.5 I IV on DACK I(OACI0 I IVCL I t I I I 1 I I I 3*5 Clock input low vol tage I I vol tage I IV Clock input high (VCH I I 13 Output leakage currentlI0Z IVss t0.45 V1 Vcc I 1,2,3 10 I +lo I 4 Input leakage current IILC IVss Y1 Vcc I
21、 1,2,3 1-10 +lo i UA vcc suppty current Ilcc I I 1,2,3 1 I 300 I mA Input capacitance Ci“ IVcc = GND O V, Fc L 1 MHz, I 4 I I 10 I pF ISee 4.3.1 i/O capacitance !CIO IVCC I GND = O Y, Fc = 1 MHz, I 4 I I 20 I pF I I I I Pee 4*3*1c 1 I I I I I Output capacitance /COUT iVcc = GND = O Y, FC = 1 MHz, I
22、4 I i 20 I pF ITc = +25“C I I I I I ISee 4.3.1 I I I I SIZE CORE IDENT. NO. DWG NO. MILITARY DRAWING A 14933 5962-86088 DAYTON, OHIO REV PAGE 4 DEFENSE ELECTRONICS SUPPLY CENTER DECC FORM 193A FEB 86 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DE
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD5962860881986MICROCIRCUITSDIGITALGRAPHICSDISPLAYCONTROLLERMONOLITHICSILICON 硅单块 绘图 显示 控制器 数字 微型

链接地址:http://www.mydoc123.com/p-698849.html