DLA SMD-5962-76004 REV H-2005 MICROCIRCUIT DIGITAL LOW-POWER SCHOTTKY TTL POSITIVE NAND GATES MONOLITHIC SILICON《硅单片与非门正肖脱基小功率TTL数字微型电路》.pdf
《DLA SMD-5962-76004 REV H-2005 MICROCIRCUIT DIGITAL LOW-POWER SCHOTTKY TTL POSITIVE NAND GATES MONOLITHIC SILICON《硅单片与非门正肖脱基小功率TTL数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-76004 REV H-2005 MICROCIRCUIT DIGITAL LOW-POWER SCHOTTKY TTL POSITIVE NAND GATES MONOLITHIC SILICON《硅单片与非门正肖脱基小功率TTL数字微型电路》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED D Device 01 inactive for new design. Add vendor, FSCM 04713. 85-09-17 N. A. Hauck E Remove vendor FSCM 18324. Delete minimum limits from propagation delay times. Hysteresis shall be guaranteed if not tested to specified limits. Editorial changes th
2、roughout. 86-01-23 N. A. Hauck F Added approved source of supply. Updated boilerplate. 95-03-24 M. L. Poelking G Update to reflect latest changes in format and requirements. Editorial changes throughout. - les 02-11-19 R. Monnin H Make correction to paragraph 3.5. - ro 05-11-15 R. Monnin CURRENT CAG
3、E CODE 67268 THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY W. Q. Denick DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY R. F. Gonzales COLUMBUS, OHIO 43218-3
4、990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY N. A. Hauck AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 76-03-18 MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, POSITIVE NAND GATES, MONOLITHIC SILICON AMSC N/A REVISION LEVEL H SIZE A CAG
5、E CODE 14933 76004 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E049-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 76004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM
6、2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 76004 01 C X Drawing nu
7、mber Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54LS132 Quadruple, 2-input Schmitt-Trigger positive NAND gates 1.2.2 Case outline(s). The case
8、outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maxi
9、mum ratings. Supply voltage . -0.5 V dc to +7.0 V dc Input voltage range -1.5 V dc at -18 mA to +5.5 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) 1/ 77 mW Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Juncti
10、on temperature (TJ) +175C 1.4 Recommended operating conditions. Supply voltage range (VCC) . 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) 1.9 V dc Maximum low level input voltage (VIL) . 0.5 V dc Case operating temperature range (TC) -55C to +125C _ 1/ Must withstand t
11、he added PDdue to short circuit test; (e.g., IOS). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 76004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 2. A
12、PPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEP
13、ARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-
14、HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, P
15、hiladelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has
16、been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified a
17、nd qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in th
18、e Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is require
19、d to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 T
20、erminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.3 Electrical performance characteristics. Unless otherwise specified here
21、in, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are descr
22、ibed in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 76004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance charac
23、teristics. Test Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroupsDevice type Limits Unit Min Max High level output voltage VOH VCC= 4.5 V, IOH= -400 A, VIN= 0.5 V or 1.9 V 1, 2, 3 All 2.5 V Low level output voltage VOL VCC= 4.5 V, IOL= 4 mA, VIN= 0.5 V or 1.9 V 1, 2, 3 All
24、 0.4 V Input clamp voltage VIC VCC= 4.5 V, IIN= -18 mA, TC= +25C 1 All -1.5 V High level input current IIH1 VCC= 5.5 V, VIH= 2.7 V 1, 2, 3 All 20 A IIH2 VCC= 5.5 V, VIH= 5.5 V 1, 2, 3 All 100 A Low level input current IIL VCC= 5.5 V, VIL= 0.4 V 1, 2, 3 All -400 A Short-circuit output current IOS VCC
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