DLA MIL-PRF-19500 609 J-2013 SEMICONDUCTOR DEVICE DIODE SILICON SWITCHING TYPES 1N6639 1N6640 1N6641 1N6639US 1N6640US AND 1N6641US JAN JANTX JANTXV JANS JANHC AND JANKC.pdf

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1、 MIL-PRF-19500/609J 24 June 2013 SUPERSEDING MIL-PRF-19500/609H 16 October 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved fo

2、r use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for controlled forward voltage switc

3、hing diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (US), figure 3, and figure 4. 1.3 Maximum ratings. TA= +25C (unless otherwise specified). Types VBRVRWMIO(PCB)TA=75C (1) (2) IFSMtp

4、 = 1/120 s RJLL = .375 inch (9.53 mm) (1) (2) RJECL = 0 (1) RJA(PCB)(1) TJ, TSTGV (pk) V (pk) mA A (pk) C/W C/W C/W C 1N6639 1N6639US 1N6640 1N6640US 1N6641 1N6641US 100 100 75 75 75 75 75 75 50 50 50 50 300 300 300 300 300 300 2.5 2.5 2.5 2.5 2.5 2.5 150 150 150 40 40 40 250 250 250 250 250 250 -65

5、 to +175 -65 to +175 -65 to +175 -65 to +175 -65 to +175 -65 to +175 (1) See figure 5 for temperature-current derating curve. (2) See figures, 6, 7, and 8 for thermal impedance curves. TA= +75C for both axial and Metal Electrode Leadless Face diodes (MELF) (US) on printed circuit board (PCB), PCB =

6、FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air, pads for (US) = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = 0.030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resi

7、stance condition included, is measured at IO= 300mA. AMSC N/A FSC 5961 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change, you

8、may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 September 2013. Provided by IHSNot for ResaleNo reproduc

9、tion or networking permitted without license from IHS-,-,-MIL-PRF-19500/609J 2 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA= +25C. Types VF4IF= 200 mA (pulsed) VF5IF= 500 mA (pulsed) IR1at TA= +25C VR= VRWMIR2at TA= +150C VR= VRWMtfrIF

10、= 200 mA trrIRM= IF= 10 mA CT1VR= 0 V dc V dc nA dc A dc ns ns pF 1N6639, 1N6639US 1N6640, 1N6640US 1N6641, 1N6641US 1.0 1.1 1.2 100 100 100 90 90 90 10 10 10 4.0 4.0 5.0 2.5 2.5 3.0 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of thi

11、s specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified re

12、quirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Un

13、less otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Cop

14、ies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of

15、 a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or netw

16、orking permitted without license from IHS-,-,-MIL-PRF-19500/609J 3 Symbol Dimensions Notes Inches Millimeters Min Max Min Max BD .056 .080 1.42 2.03 3, 4 BL .130 .180 3.30 4.57 4 LD .018 .022 0.46 0.56 5 LL 1.00 1.50 25.40 38.10 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for genera

17、l information only. 3. Dimension BD shall be measured at the largest diameter. 4. The minimum dimension of BD shall apply over at least .065 inch (1.65 mm) of dimension BL. 5. The specified lead diameter applies in the zone between .050 inch (1.27 mm) from the diode body to the end of the lead. Outs

18、ide of this zone lead shall not exceed BD. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Types 1N6639, 1N6640, and 1N6641. FIGURE 1. Physical dimensions (DO-35). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19

19、500/609J 4 Symbol Dimensions Inches Millimeters Min Max Min Max BD .070 .085 1.78 2.16 BL .165 .195 4.19 4.95 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to

20、x symbology. Types 1N6639US, 1N6640US, and 1N6641US. FIGURE 2. Physical dimensions of surface mount family. US Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/609J 5 Ltr Dimensions Inches Millimeters Min Max Min Max A .014 .018 0.360 0.

21、460 B .005 .007 0.120 0.180 C .008 .012 0.20 0.30 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Element evaluation accomplished utilizing TO-5 package. 3. The physical characteristics of the die are: Metallization: Top (anode): Al Back (cathode): Au Al th

22、ickness: 25,000 minimum. Gold thickness: 4,000 minimum. Chip thickness: .010 inch (0.25 mm) .002 inch (0.05 mm). FIGURE 3. Physical dimensions JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/609J 6 Ltr Dimensions

23、Inches Millimeters Min Max Min Max A .0130 .0170 0.330 0.432 B .0059 .0061 0.150 0.155 C .008 .012 0.20 0.30 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Element evaluation accomplished utilizing TO-5 package. 3. The physical characteristics of the die a

24、re: Metallization: Top (anode): Al Back (cathode): Au Al thickness: 25,000 minimum. Gold thickness: 4,000 minimum. Chip thickness: .010 inches (0.25 mm) .002 inches (0.05 mm). * FIGURE 4. Physical dimensions, JANHCB and JANKCB die. Provided by IHSNot for ResaleNo reproduction or networking permitted

25、 without license from IHS-,-,-MIL-PRF-19500/609J 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer auth

26、orized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical

27、dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1, 2, 3, and 4 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in

28、the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be constructed in a manner and using materials which enable the diodes to meet the applicable requirements of MIL-PRF-19500 and this document. a. All devices shall be of metallurgically bonded, thermally matched, non-c

29、avity, double-plug construction in accordance with the requirements of category I (see MIL-PRF-19500). b. The US version shall be structurally identical to the non-US versions except for end-cap lead attachment. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the elect

30、rical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be

31、 marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, JANTXV, and JANS may be abbreviated as J, JX, JV, and JS respectively. The part numbe

32、r may be reduced to J6639, JX6639, JV6639, or JS6639. No color coding shall be permitted for part numbering. 3.7.1 US devices. For US version devices only, all marking, except polarity (and serial number for JANS) may be omitted from the body, but shall be retained on the initial container. US devic

33、es shall be marked with a cathode band as a minimum. For US devices, a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free f

34、rom other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). Provi

35、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/609J 8 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualificati

36、on inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II te

37、sts, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500,

38、 and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) JANS level JANTXV and JANTX level 2 Not required Not required 3b (1) 3c Not

39、applicable Thermal impedance (see 4.3.3) Not applicable Thermal impedance (see 4.3.3) 4 Not applicable Not applicable 5 Not applicable for axial leaded devices Not applicable 6 Not applicable Not applicable 9 IR1 Not applicable 10 Method 1038 of MIL-STD-750, condition A Method 1038 of MIL-STD-750, c

40、ondition A 11 VF4(1N6640, 1N6641) or VF5(1N6639), IR1; and V(BR); IR115 nA dc or 100 percent of initial value whichever is greater VF4(1N6640, 1N6641) or VF5(1N6639) and IR112 Required, see 4.3.2 Required, see 4.3.2 13 Subgroups 2 and 3 of table I herein; IR1 100 percent of initial reading or 15 nA

41、dc, whichever is greater; VF4 0.030 V dc for 1N6640, 1N6641), VF5 0.030 V dc for 1N6639, (scope display, see 4.5.3) Subgroup 2 of table I herein; IR1100 percent of initial reading or 15 nA dc, whichever is greater; VF4 0.030 V dc for 1N6640, 1N6641), VF5 0.030 V dc for 1N6639, (scope display, see 4.

42、5.3) (1) Thermal impedance shall be performed any time after screen 3; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix G of MIL-PRF-19500. Burn-in duration for the J

43、ANKC level follows JANS requirements; the JANHC follows JANTX requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/609J 9 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (See 4.5.1): Method 1038 of MIL-S

44、TD-750, condition B. VR= rated VRWM; f = 50 - 60 Hz; IO= 300 mA dc or IF= 300 mA dc minimum. TA= 75C maximum. The maximum current density of small die shall be submitted to the qualifying activity for approval. Alternate mounting conditions shall be submitted to the qualifying activity for approval.

45、 With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, and mounting conditions) may be used. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essenti

46、al criteria for burn-in modification approval. 4.3.3 Thermal impedance measurements. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for determining IHand IM. Measurement delay time (tMD)

47、= 70 s max, tHshall be 10 ms maximum. The thermal impedance limit shall comply with the thermal impedance graphs in figures, 6, 7, and 8 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3101 or 40

48、81 of MIL-STD-750, as applicable. See group E, subgroup 4 of table II herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, table I herein, a

49、nd as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV