DLA MIL-PRF-19500 540 E-2010 SEMICONDUCTOR DEVICE DARLINGTON TRANSISTOR PNP SILICON POWER TYPES 2N6298 AND 2N6299 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/540E 10 September 2010 SUPERSEDING MIL-PRF-19500/540D 12 August 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP SILICON, POWER, TYPES 2N6298 AND 2N6299, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies

2、of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product a

3、ssurance is provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-66). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) RJC VCBO VCEO VEBO IC IB TJand TSTGTC= 25C TC= +100C 2N6298 2N6299 W 64 64 W 32 32 C/W 2.33 2.33 V

4、dc 60 80 V dc 60 80 V dc 5 5 A dc 8 8 mA dc 120 120 C -65 to +175 -65 to +175 (1) Derate linearly at 0.428 W/C above TC 25C. 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Limits hFE2 (1) hFE3 (1) hfe VCE= 3 V dc Cobo 100 kHz f 1 MHz Pulse response VBE(sat)(1) VCE(sat)

5、2 (1) hfe VCE= 3 V dc VCE= 3 V dc IC= 4 A dc VCE= 3 V dc IC= 8 A dc IC= 3 A dc f = 1 MHz VCB= 10 V dc IE= 0 ton toff IC= 8 A dc IB= 80 mA dc IC= 8 A dc IB= 80 mA dc IC= 3 A dc f = 1 kHz Min Max 750 18,000 100 25 350 pF 200 s 2.0 s 8.0 V dc 4.0 V dc 3.0 300 (1) Pulsed (see 4.5.1). AMSC N/A FSC 5961 I

6、NCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address informa

7、tion using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 10 December 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL

8、-PRF-19500/540E 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. Whil

9、e every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards

10、, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semicon

11、ductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk,

12、700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document

13、, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be pro

14、ducts that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specifi

15、ed in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1, (similar to TO-66). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of l

16、ead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4,

17、and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appe

18、arance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/540E 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0

19、.13 mm) -.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on t

20、he center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. Lead number 1 is the emitter, lead 2 is the base, case is the collector. 8. In accordance with ASME Y14.5M, diameters are equivalent to

21、x symbology. FIGURE 1. Physical dimensions (similar to TO-66). Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .620 15.76 CH .250 .340 6.35 8.64 HR .350 8.89 HT .050 .075 1.27 1.91 HR1.115 .145 2.92 3.68 4 LD .028 .034 .71 .86 4, 6 LL .360 .500 9.14 12.70 L1 .050 1.27 6 MHD .142 .152 3

22、.61 3.86 4 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 3 PS1 .093 .107 2.36 2.73 3 S .570 .590 14.48 14.99 Notes 1, 2, 5, 7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/540E 4 4. VERIFICATION 4.1 Classification of inspections. T

23、he inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as speci

24、fied herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein

25、that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurement

26、s shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurements of MIL-PRF-19500) JANTX and JANTXV levels only (1) 3c Thermal impedance (see 4.3.2). 9 ICEX1and hFE211 ICEX1and hFE212 See 4.3.1 13 Subgrou

27、p 2 of table I herein; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. hFE2= 40 percent. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are

28、as follows: VCE 10 V dc; TJ= +162.5C 12.5C. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM,

29、 IH, tH, tSW(and VHwhere appropriate). See table II, group E, subgroup 4 herein. Measurement delay time (tMD) = 70 s max. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with t

30、able E-V of MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/540E 5 4.4.2 Group B inspection. Group B inspecti

31、on shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the table I, subgroup 2 herein. Subgroup Method Condition B3 1037 VCE 10 V dc; TJbetween c

32、ycles +100C; ton= toff= 3 minutes for 2,000 cycles. No heat sink or forced-air cooling on the devices shall be permitted. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measu

33、rements (end-points) shall be in accordance with the table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A, weight = 10 pounds, time = 15 seconds. C5 3151 RJC= 2.33C/W. C6 1037 VCE 10 V dc; TJbetween cycles +100C; ton= toff= 3 minutes for 6,000 cycles. No heat sink or forced

34、-air cooling on device shall be permitted. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with table I

35、, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networkin

36、g permitted without license from IHS-,-,-MIL-PRF-19500/540E 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJCC/W Breakdown voltage, collector to em

37、itter 3011 Bias condition D, IC= 100 mA dc; pulsed (see 4.5.1) V(BR)CEO2N6298 60 V dc 2N6299 80 V dc Collector to emitter cutoff current 3041 Bias condition A, VBE= 1.5 V dc ICEX12N6298 VCE= 60 V dc 10 A dc 2N6299 VCE= 80 V dc 10 A dc Collector to emitter cutoff current 3041 Bias condition D ICEO2N6

38、298 VCE= 30 V dc 0.5 mA dc 2N6299 VCE= 40 V dc 0.5 mA dc Emitter to base cutoff current 3061 Bias condition D, VEB= 5 V dc IEBO2.0 mA dc Forward-current transit ratio 3076 VCE= 3 V dc, IC= 1 A dc, pulsed (see 4.5.1) hFE1500 Forward-current transit ratio 3076 VCE= 3 V dc, IC= 4 A dc, pulsed (see 4.5.

39、1) hFE2750 18000 Forward-current transit ratio 3076 VCE= 3 V dc, IC= 8 A dc, pulsed (see 4.5.1) hFE3100 Base emitter voltage (nonsaturated) 3066 Test condition B, VCE= 3 V dc, IC= 4 A dc, pulsed (see 4.5.1) VBE(on)2.8 V dc Base emitter voltage (saturated) 3066 Test condition A, IC= 8 A dc, IB= 80 mA

40、 dc, pulsed (see 4.5.1) VBE(sat)14.0 V dc Collector - emitter voltage (saturated) 3071 IC= 4 A dc, IB= 16 mA dc, pulsed (see 4.5.1) VCE(sat)12.0 V dc Collector - emitter voltage (saturated) 3071 IC= 8 A dc, IB= 80 mA dc, pulsed (see 4.5.1) VCE(sat)22.0 V dc See footnotes at end of table. Provided by

41、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/540E 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High temperature operation: TA= +150C Collector to emitter cutoff cur

42、rent 3041 Bias condition A, VBE= 1.5 V dc ICEX22N6298 VCE= 60 V dc 5.0 mA dc 2N6299 VCE= 80 V dc 5.0 mA dc Low temperature operation: TA= -55C Forward current transfer ratio 3076 VCE= 3 V dc, IC= 4 A dc, pulsed (see 4.5.1) hFE4200 Subgroup 4 Small signal short circuit forward current transfer ratio

43、3206 VCE= 3 V dc; IC= 3 A dc; f = 1 kHz hfe300 Magnitude of small-signal short-circuit forward- current transfer ratio 3306 VCE= 3 V dc, IC= 3 A dc, f = 1.0 MHz |hfe| 25 350 Pulse response 3251 Turn-on time See figure 2; VCC= 30 V dc; IC= 4 A dc; IB1= 16 mA dc ton2.0 s Turn-off time See figure 3; VC

44、C= 30 V dc; IC= 4 A dc; IB1= 16 mA dc toff8.0 s Open circuit output capacitance 3236 VCB= 10 V dc; IE= 0; 100 kHz f 1 MHz Cobo200 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/540E 8 TABLE I. Group A

45、inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Safe operating area (dc) Test 1 Test 2 Test 3 2N6298 2N6299 Safe operating area (switching) 2N6298 2N6299 Safe operation area (switching) Test 1 3051 3053 3053 TC.= 25C +10C, t = 1 s; 1 cycle; s

46、ee figure 4; VCE= 8 V dc; IC= 8 A dc VCE= 20 V dc; IC= 2.0 A dc IC= 100 mA dc VCE= 60 V dc VCE= 80 V dc Load condition B, (clamped inductive load); TA= +25C; tr+ tf1.0 s duty cycle 10 percent, tp= 1 ms; (vary to obtain IC); RS= 0.1 ohms; RBB1= 80 ohms; VBB1= 16 V dc; RBB2= 100 ohms; VBB2= 1.5 V dc;

47、VCC= 50 V dc; IC= 8 A dc; RL 2 ohms; L = 1 mH; clamp voltage 60 V dc 80 V dc Load condition C; (unclamped inductive load) See figure 5, TA= +25C; duty cycle 10 percent RS= 0.1 ohms tp= 1 ms; (vary to obtain IC); RBB1= 80 ohms; VBB1 12 V dc; RBB2= ; VCC 30 V dc; IC= 8 A dc; RL 0.5 ohms; L = 1 mH at 8

48、 A dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/540E 9 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 - Continued Test 2 End point electrical measurements: Collector to emitter cutoff current 3041 tp= 1 ms; (vary to obtain IC); RBB1= 80 ohms; VBB1 12 V dc; RBB2= ; VBB2= 0 V dc; VCC= 30 V dc; IC= 0.2 A dc; RL 0.5 ohms; L = 100 mH; at 0.2 A dc Bias condition A; VBE= 1.5 V dcICEX12N6298 VCE= 60 V dc 0.5