DLA MIL-PRF-19500 485 N-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON LOW-POWER TYPES 2N5415 2N5415S 2N5415UA 2N5415U4 2N5416 2N5416S 2N5416UA AND 2N5416U4 JAN JANTX JANTXV JANS.pdf

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1、 MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JA

2、NSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein

3、 shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product as

4、surance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device p

5、refix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to TO-5), figures 2 and 3 for JANHC and JANKC (die) dimensions, figure 4 for UA package, and figure 5 for U4. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) TA= +25C

6、PT(2) TC= +25C PT(3) TSP= +25C RJARJCRJSPVCBOVCEOVEBOICTSTGand TJ2N5415, S 2N5415UA 2N5415U4 2N5416, S 2N5416UA 2N5416U4 W 0.75 0.75 1 0.75 0.75 1 W 10 15 10 15 W 2 2 C/W 234 234 145 234 234 145 C/W 17.5 12 17.5 12 C/W N/A 80 N/A N/A 80 N/A V dc 200 200 200 350 350 350 V dc 200 200 200 300 300 300 V

7、 dc 6.0 6.0 6.0 6.0 6.0 6.0 A dc 1.0 1.0 1.0 1.0 1.0 1.0 C -65 to +200 (1) Derate linearly 4.29 mW/C for TA +25C. 6.90 mW/C for U4. (2) Derate linearly 57.2 mW/C for TC +25C. 86 mW/C for U4. (3) Derate linearly 12.5 mW/C for TSP +25C. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions

8、on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assi

9、st.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/485N 2 1.4 Primary electrical characteristics

10、. hFE1Cobohfe VBEVCE(sat)IC= 50 mA dc, (1) IE= 0 IC= 10 mA dc IC= 50 mA dc, (1) IC= 50 mA dc, (1) VCE= 10 V dc VCB= 10 V dc, VCE= 10 V dc, VCE= 10 V dc IB= 5 mA dc 100 kHz f 1 MHz f = 5 MHz pF V dc V dc Min 30 3 Max 120 15 15 1.5 2.0 (1) Pulsed (See 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The d

11、ocuments listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of t

12、his list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, an

13、d handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEF

14、ENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of pr

15、ecedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exempt

16、ion has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/485N 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 6 LD .016 .

17、021 0.41 0.53 7, 8 LL See notes 7, 8, 11,12 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7, 8 L2.250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 10 TL .029 .045 0.74 1.14 3 TW .028 .034 0.71 0.86 2 45 TP 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information onl

18、y. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be wit

19、hin.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be

20、internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. For transistor types 2N5415 and 2N5416, dimension LL shall be 1.5 inches (38.1 mm) minimum and 1.75 inches (44.4 mm) maximum. 12. For transistor types 2N5415S and 2N5416S, dimension LL shall be .5 i

21、nch (12.7 mm) minimum and .75 inch (19.0 mm) maximum. 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 14. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-5). Provided by IHSNot for ResaleNo reproduction or networking perm

22、itted without license from IHS-,-,-MIL-PRF-19500/485N 4 1. Chip size: .046 x .046 inch .002 inch (1.1684 x 1.1684 mm .0508 mm). 2. Chip thickness: .010 .0015 inch (.254 .0381 mm) nominal. 3. Top metal: Aluminum 30, 000 minimum, 33, 000 nominal. 4. Back metal: A. Gold 3, 500 minimum, 5, 000 nominal.

23、5. Backside: Collector. 6. Bonding pad: B = .005 x .008 inch (.127 x .2032 mm), E = .010 x .007 inch (.254 x .1778 mm). FIGURE 2. JANHCB and JANKCB (B-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/485N 5 Die s

24、ize: .045 x .045 inch (1.143 x 1.143 mm). Die thickness: .008 .0016 inch (0.2032 0.04064 mm). Base pad: .0085 x .00425 inch (0.2159 x 0.10795 mm). Emitter pad: .004 x .0125 inch (0.1016 x 0.3175 mm). Back metal: Gold, 6,500 1,950 . Top metal: Aluminum, 20,000 2,000 . Back side: Collector. Glassivati

25、on: SiO2, 7,500 1,500 . FIGURE 3. JANHCD and JANKCD (D-version) die dimensions. E B Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/485N 6 Dimensions Dimensions Symbol Inches Millimeters Note Symbol Inches Millimeters Note Min Max Min M

26、ax Min Max Min Max BL .215 .225 5.46 5.71 LL1 .032 .048 0.81 1.22 BL2 .225 5.71 LL2 .072 .088 1.83 2.23 BW .145 .155 3.68 3.93 LS .045 .055 1.14 1.39 BW2 .155 3.93 LW .022 .028 0.56 0.71 CH .061 .075 1.55 1.91 3 LW2 .006 .022 0.15 0.56 5 L3 .003 0.08 5 LH .029 .042 0.74 1.07 Pin Number 1 2 3 4 Trans

27、istor Collector Emitter Base N/C NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension “CH“ controls the overall package thickness. When a window lid is used, dimension “CH“ must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inc

28、h (1.016 mm). 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturers option, from that shown on the drawing. * 5. Dimensions “LW2“ minimum and “L3“ minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic la

29、yers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “LW2“ maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of this dimension may be made prior to solder dipping.

30、6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 4. Physical dimensions, surface moun

31、t (UA version). UA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/485N 7 Symbol Dimensions Inches Millimeters Min Max Min Max BL .215 .225 5.46 5.71 BW .145 .155 3.68 3.94 CH .049 .075 1.24 1.90 LH .020 0.508 LL1 .085 .125 2.16 3.17 LL

32、2 .045 .075 1.14 1.91 LS1 .070 .095 1.78 2.41 LS2 .035 .048 0.89 1.22 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1.19 1.45 Q1 .030 .070 0.76 1.78 Q2 .020 .035 0.51 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 1 is collector. 4. Terminal 2 is

33、base. 5. Terminal 3 is emitter. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. Physical dimensions, surface mount (2N5415U4, 2N5416U4) version (U4) (SMD-.22). U4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M

34、IL-PRF-19500/485N 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activi

35、ty for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJAThermal resistance junction to ambient. RJ

36、CThermal resistance junction to case. RJSPThermal resistance junction to solder pads. TSPTemperature of solder pads. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein. 3.4.1 Lead finish. Lead finish

37、 shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to me

38、et the applicable requirements of MIL-PRF-19500 and this document. 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein,

39、the electrical performance characteristics are as specified in 1.3, 1.4, and table I and II. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I and II herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation har

40、dened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects t

41、hat will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III)

42、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/485N 9 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be

43、performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

44、the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification for die shall be in accordance with MIL-PRF-19500. 4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The

45、following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance method 3131 of MIL-STD-750, see 4.3.2. Th

46、ermal impedance method 3131 of MIL-STD-750, see 4.3.2. 9 ICEXand hFE1 Not applicable. 10 48 hours minimum. 48 hours minimum. 11 ICEX, hFE1ICEX= 100 percent of initial value or 2.5 A dc, whichever is greater; hFE1= 15 percent of initial value. ICEXand hFE112 See 4.3.1. See 4.3.1. 13 Subgroups 2 and 3

47、 of table I herein; ICEX= 100 percent of initial value or 2.5 A dc, whichever is greater; hFE1= 15 percent of initial value. Subgroup 2 of table I herein; ICEX= 100 percent of initial value or 2.5 A dc, whichever is greater; hFE1= 20 percent of initial value. (1) Shall be performed any time after te

48、mperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1039 of MIL-STD-750, test condition B, VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification de