DLA MIL-PRF-19500 456 E-2009 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPES 2N5302 AND 2N5303 JAN JANTX JANTXV AND JANS.pdf

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1、 INCH-POUND MIL-PRF-19500/456E 6 March 2009 SUPERSEDING MIL-PRF-19500/456D 29 July 1999 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5302 AND 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Ag

2、encies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product

3、assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TA= +25C PT(1) TC= +100C VCBOVCEOVEBOIBICTJand TSTGRJCW W V dc V dc V dc A dc A dc C C/W Max 2N5

4、302 2N5303 5 5 115 115 60 80 60 80 5.0 5.0 7.5 7.5 30 20 -65 to +200 -65 to +200 0.875 0.875 (1) Derate linearly, 1.14 mW/C above TC= +100C. Derate linearly, 28.57 mW/C above TA= +25C. The documentation and process conversion measures necessary to comply with this document shall be completed by 6 Ju

5、ne 2009. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this a

6、ddress information using the ASSIST Online database at http:/assist.daps.dla.mil . AMSC N/A FSC 5961 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/456E 21.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. hFE

7、2(1) hFE2(1) hFE VBE(sat)2(1) VCE(sat)2(1) CoboPulse response VCE= 2 V dc IC= 15 A dc VCE= 2 V dc IC= 10 A dc VCE= 10 V dc IC= 1 A dc f = 1 MHz IC= 15 A dc IB= 1.5 A dc IC= 15 A dc IB= 1.5 A dc VCB= 10 V dc IE= 0 100 kHz f 1 MHz tontoffMin Max 2N5302 15 60 2N5303 15 60 V dc 2 40 2N5302V dc 1.8 2N530

8、3V dc 2 2N5302V dc 1 2N5303V dc 1.5 pF 800 s 1.1 s 3.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification

9、 or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are li

10、sted. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contr

11、act. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist

12、.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the

13、 text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/456E 3Ltr Dimensions N

14、otes Ltr Dimensions Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max CD .875 22.23 CH .270 .380 6.86 8.89 L1.050 1.27 HR .495 .525 12.57 13.34 4 MHD .151 .161 3.84 4.09 4 HR1.131 .188 3.33 4.78 4 MHS 1.177 1.197 29.90 30.40 HT .060 .135 1.52 3.43 PS .420 .440 10.67 11.18 3, 4 LD

15、 .038 .043 0.97 1.09 4, 6 PS1.205 .225 5.21 5.72 3, 4 LL .312 .500 7.92 12.70 s1.655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and case is collector. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points

16、.050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inc

17、h (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions

18、- (similar to TO-3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/456E 43. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furni

19、shed under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and

20、 definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. * 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and

21、 herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test req

22、uirements. The electrical test requirements shall be as specified in table I. * 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. * 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affe

23、ct life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualifi

24、cation inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request

25、the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

26、 IHS-,-,-MIL-PRF-19500/456E 5* 4.3 Screening (JANS, JANTX, and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall

27、 not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.2) Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.2) 9 ICEX1and hFE2Not applicable 11 ICEX1 and hFE2ICEX1= 100 percent or

28、1 A whichever is greater; hFE2= 20 percent ICES1and hFE212 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICEX1= +100 percent of initial value or 1 A, whichever is greater. hFE2= 15 percent of initial value Subgroup 2 of table I herein; ICEX1= +100 percent of initial value or 1 A, which

29、ever is greater. hFE2= 15 percent of initial value (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +187.5C 12.5C, VCE 10 V dc, TA +35C. * 4.3.

30、2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance i

31、nspection shall be in accordance with MIL-PRF-19500 and as specified herein 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, gr

32、oup A, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/456E 64.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa (JANS) and

33、E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 103

34、7 VCB= 20 V dc; PD= 5 W at TA= room ambient as defined in 4.5 of MIL-STD-750; ton= toff= 3 minutes minimum for 2,000 cycles. No heat sink or forced air cooling on devices shall be permitted. B5 1027 VCB= 20 V dc; TA= +125C 25C for 96 hours; PT= 5 W at TA= +125C or adjusted as required by the chosen

35、TAto give an average lot, TJ= +275C. 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 For solder die attach: VCB 10 V dc; TA 35C, 2,000 cycles. No heat sink or forced air cooling on devices shall be permitted. B3 1026 For eutectic d

36、ie attach: VCB 10 V dc; TA 35C, adjust PTto achieve TJ= 175C minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in acc

37、ordance with table I, subgroup 2 herein. 4.4.3.1. Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Conditions C6 1037 For solder die attach: VCB 10 V dc; TA 35C, 6,000 cycles. No heat sink or forced air cooling on devices shall be permitted. C6 1026 For eutectic die attach: VCB 10 V

38、 dc; TA 35C, adjust PTto achieve TJ= 175C minimum. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for Res

39、aleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/456E 74.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power appli

40、cation shall be 3.14 A dc. b. Collector to emitter voltage magnitude shall be 20 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25C TR +75C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header.

41、f. Maximum limit of RJCshall be 0.875C/W. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/456E 8* TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 1 Visual and mechanical exami

42、nation 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJXC/W Collector - emitter breakdown voltage 2N5302 2N5303 3011 Bias condition D; IC= 200 mA dc pulsed (see. 4.5.1) V(BR)CEO60 80 V dc V dc Collector - emitter cutoff current 2N5302 2N5303 3041 Bias condition D; VCE= 60 V dc VCE= 80 V dc ICE

43、O10.0 A dc Emitter - base cutoff current 3061 Bias condition D; VEB= 5 V dc IEBO5.0 A dc Collector - emitter cutoff current 2N5302 2N5303 3041 Bias condition A; VBE= 1.5 V dc; VCE= 60 V dc VCE= 80 V dc ICEX1 5.0 A dc Collector - base cutoff current 2N5302 2N5303 3036 Bias condition D; VCE= 60 V dc V

44、CE= 80 V dc ICBO5.0 A dc Base - emitter saturated voltage 3066 Test condition A; IC= 10 A dc; IB= 1 A dc; pulsed (see 4.5.1) VBE(sat)11.7 V dc Base - emitter saturated voltage 2N5302 2N5303 3066 Test condition A; IC= 15 A dc; IB= 1.5 A dc; pulsed (see 4.5.1) VBE(sat)21.8 2.0 V dc V dc Base - emitter

45、 saturated voltage 2N5302 2N5303 3066 Test condition A; IC= 20 A dc; pulsed (see 4.5.1); IB= 2 A dc IB= 4 A dc VBE(sat)32.5 2.5 V dc V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/456E 9* TABLE I. Gr

46、oup A inspection - Continued. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 2 - Continued Base - emitter voltage (nonsaturated) 2N5302 2N5303 3066 Test condition B; VCE= 2 V dc; pulsed (see 4.5.1); IC= 15 A dc IC= 10 A dc VBE11.8 1.5 V dc V dc Base - emitter voltage

47、 (unsaturated) 2N5302 2N5303 3066 Test condition B; VCE= 4 V dc, pulsed (4.5.1) IC= 30 A dc IC= 20 A dc VBE23.0 2.5 V dc V dc Collector - emitter saturated voltage 2N5302 2N5303 3071 IC= 10 A dc; IB= 1 A dc; pulsed (see 4.5.1) VCE(sat)10.75 1.0 V dc V dc Collector - emitter saturated voltage 2N5302

48、2N5303 3071 IC= 15 A dc; IB= 1.5 A dc; pulsed (see 4.5.1) VCE(sat)21.0 1.5 V dc V dc Collector - emitter saturated voltage 2N5302 2N5303 3071 IC= 20 A dc; pulsed (see 4.5.1); IB= 2 A dc IB= 4 A dc VCE(sat)32.0 2.0 V dc V dc Collector - emitter saturated voltage 2N5302 (only) 3071 IC= 30 A dc; pulsed (see 4.5.1); IB= 6 A dc VCE(sat)43.0 V dc Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 1 A dc; pulsed (see 4.5.1) hFE140 Forward-current transfer ratio 2N5302 2N5303 3076 VCE= 2 V dc; pulsed (see 4.5.1); IC= 15 A dc IC= 10 A dc hFE215 15 60 60 Forward-current transfer ratio 2N5302 2