DLA MIL-PRF-19500 453 F-2011 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-FREQUENCY TYPE 2N5109 AND 2N5109UB JAN JANTX JANTXV JANS JANHC JANKC JANSM JANSD JANSP JANSL JANSR JAN.pdf

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1、 MIL-PRF-19500/453F 31 January 2011 SUPERSEDING MIL-PRF-19500/453E 24 April 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY TYPE 2N5109 AND 2N5109UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH

2、This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for

3、 NPN silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JA

4、NKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 herein (similar to TO-39), figure 2 (2N5109UB) and figure 3 (JANHC2N5109, JA

5、NKC2N5109). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. PT(1) TA= +25C PT(2) TC= +25C VCBO VCEO IC VEBO TSTGand TJRJARJCW 1 W 2.9 V dc 40 V dc 20 A dc 0.4 V dc 3.0 C -65 to +200 C/W 175 C/W 60 (1) Derate at 5.71 mW/C above TA +25C. (2) Derate at 16.6 mW/C above TC +25C. AMSC N/A FSC 5

6、961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address in

7、formation using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 31 April 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M

8、IL-PRF-19500/453F 2 Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .190 .210 4.83 5.33 LD .016 .021 0.41 0.53 4 LL .500 .750 12.70 19.05 4 LU .016 .019 0.41 0.48 4 L1 .050 1.27 4 L2 .250 6.35 4 Q .050 1.27 6 TL .029

9、.045 0.74 1.14 5 TW .028 .034 0.71 0.86 r .010 0.25 45 TP 45 TP P .100 2.54 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010 inch (0.

10、0254 mm). 4. (Three leads) LU applies between L1and L2. LD applies between L2and .5 inch (12.70 mm) from seating plane. Diameter is uncontrolled in L1and beyond .5 inch (12.70 mm) from seating plane. 5. Measured from maximum diameter of the actual device. 6. Details of outline in this zone optional.

11、 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of transistor type 2N5109 (similar to TO-39). TO-39 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/453F 3 Symbol Dimensions Note

12、 Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1.036 .040 0.91 1.02 BL .115 .128 2.92 3.25 LS2.071 .079 1.81 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 .203 CW .108 2.74 r1 .012 .305 LL1 .022 .038 0.5

13、6 0.96 r2 .022 .559 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the

14、lid. * 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (2N5109UB). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/453F 4 E BDie size: .016 x .020 inches (0.4

15、064 x 0.508 mm). Die thickness: .008 .0016 inches (0.2032 0.04064 mm). Base pad: .0028 x .0028 inches (0.07112 x 0.07112 mm). Emitter pad: .0028 x .0028 inches (0.07112 x 0.07112 mm). Back metal: Gold, 6500 1950 Ang Top metal: Aluminum, 17500 2500 Ang Back side: Collector Glassivation: SiO2, 7500 15

16、00 Ang NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unless otherwise specified tolerance is .00100 inch (0.0254 mm). FIGURE 3. JANHC and JANKC (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

17、ense from IHS-,-,-MIL-PRF-19500/453F 5 1.4 Primary electrical characteristics (common to all types). Limits hFE VCE(SAT) Cobo hFE Power gain VCE= 15 V dc IC= 50 mA dc IC= 100mA dc IB= 10 mA dc IE= 0 100 kHz f 1 MHz VCB= 28 V dc VCE= 15 V dc IC= 50 mA dc f = 200 MHz IC= 50 mA dc f = 200 MHz Pin = -10

18、dB VCE= 15 V dc Min Max 40 150 V dc 0.5 pF 3.5 6.0 11.0 dB 11.0 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended f

19、or additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Governm

20、ent documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF

21、DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or

22、from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this doc

23、ument takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices

24、 furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking per

25、mitted without license from IHS-,-,-MIL-PRF-19500/453F 6 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. cm . Cross modulation G . Voltage gain. NF . Noise figure 3.4 Interface and physical dimens

26、ions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (similar to TO-39), figure 2 (2N5109UB) and figure 3 (JANHC2N5109 and JANKC2N5109) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Wh

27、ere a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics.

28、 Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. * 3. 8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiat

29、ion hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other de

30、fects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I, II, an

31、d III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection s

32、hall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be perfo

33、rmed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/453F 7 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of

34、MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS levels JANTX and JANTXV levels (1) 3c Thermal impeda

35、nce (see 4.3.2) Thermal impedance (see 4.3.2) 9 ICEO1and hFE1Not applicable 10 48 hours minimum 48 hours minimum 11 ICEO1and hFE1; ICEO1= 100 percent of initial value or 2 uA dc, whichever is greater. hFE1= 20 percent. ICEO1and hFE112 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICEO1

36、= 100 percent of initial value or 2 A dc, whichever is greater. hFE1= 20 percent change from initial reading. Subgroup 2 of table I herein; ICEO1= 100 percent of initial value or 2 A dc, whichever is greater. hFE1= 20 percent change from initial reading. (1) Shall be performed anytime after temperat

37、ure cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc; TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achie

38、ve a junction temperature, TJ= +135C minimum and a minimum PD= 75 percent of PTmaximum rated as defined in 1.3 herein. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JAN, JANTX, and JAN

39、TXV. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with meth

40、od 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with M

41、IL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate scr

42、eening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accor

43、dance with 4.4.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/453F 8 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection

44、shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) and 4.4.2.1 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B

45、 inspection table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB= 10 - 30 V dc, adjust power or current to achieve a TJ= +100C. B5 1027 VCB= 10 V dc; TA= +125C 25C for 96 hours with PTadjusted according to the chosen TAto give TJ= +275C minimum. Optionally, the test may be per

46、formed for a minimum of 216 hours with PTadjusted to achieve a TJ= +225C; sample size = 45, c = 0. In this case, the ambient temperature shall be adjusted such that a minimum 75 percent of maximum rated PT(see1.3) is applied to the device under test. (NOTE: If a failure occurs, resubmission shall be

47、 at the test conditions of the original sample.) 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another a

48、ssembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Conditions 1 1026 Steady-state life: 340 hours, VCB= 10 - 30 V dc; power shall be applied to achieve TJ= +150C minimum and a power dissipation of PD 75 percent o

49、f max rated PTas defined in 1.3 herein shall be used. n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0. The sample size may be increased and the test time decreased so long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C