DLA MIL-PRF-19500 262 G-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPES 2N1722 AND 2N1724 JAN AND JANTX.pdf

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1、 MIL-PRF-19500/262G 6 December 2013 SUPERSEDING MIL-S-19500/262F 19 February 1969 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N1722 AND 2N1724, JAN AND JANTX This specification is approved for use by all Departments and Agencies of the Department

2、 of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Two

3、 levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-53) and figure 2 (TO-61). 1.3 Maximum ratings unless otherwise specified TA= +25C. PT(1) TA= +25C PT (2) TC= +100C RJCVCBOVCEOVEBOICTstgand TJW 3 W 50 C/W 1.5 V dc

4、175 V dc 80 V dc 10 A dc 5 C -65 to +200 (1) Derate linearly at 20 mW/C for TA +25C +175C. (2) Derate linearly at 666 mW/C for TC +100C +175C. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Col

5、umbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this

6、revision shall be completed by 6 March 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/262G 2 1.4 Primary electrical characteristics at TC= +25C. Limits hFE1(1) VCE = 15 V IC= 2 A |hfe| VCE= 15 V IC= 500 mA dc f = 10 MHz VBE(sat)1

7、(1) IC= 2 A dc IB= 200 mA dc VCE(sat)1(1) IC= 2 A dc IB= 200 mA dc CoboVCB=15 V dc IE= 0 f = 100 kHz f 1 MHz Min Max 30 120 1 5 V dc 1.2 V dc 0.6 pF 550 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this spec

8、ification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirem

9、ents of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless o

10、therwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of t

11、hese documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a con

12、flict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking

13、 permitted without license from IHS-,-,-MIL-PRF-19500/262G 3 Dimension Ltr Inches Millimeters Notes Min Max Min Max A .670 .680 17.02 17.27 B .040 .055 1.02 1.40 C .035 .045 0.89 1.14 4 D .130 .150 3.30 3.81 4 E .190 .210 4.83 5.33 F .385 .415 9.78 10.54 G .370 .420 9.40 10.67 4 H .305 .355 7.75 9.0

14、2 J .850 .870 21.59 22.1 K .670 .690 17.02 17.53 L .330 .350 8.38 8.89 M .850 .870 21.59 22.1 N .670 .690 17.02 17.53 O .330 .350 8.38 8.89 P .190 .210 4.83 5.33 R .096 .106 2.44 2.69 7 S .765 .785 19.43 16.94 T .030 .065 0.76 1.65 V .075 .105 1.91 2.67 6 W .075 - 1.91 - 5 NOTES: 1. Dimensions are i

15、n inches. Millimeters are given for general information only. 2. Lead spacing measured at seating plane. 3. The collector shall be electrically connected to the case. 4. All three leads. 5. All four locations. 6. All eight locations. 7. All four holes. 8. In accordance with ASME Y14.5M, diameters ar

16、e equivalent to x symbology. FIGURE 1. Physical dimensions of transistor types 2N1722 (TO-53). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/262G 4 NOTES: 1. Dimensions are in inches, millimeters are given for general information only

17、. 2. The collector shall be electrically connected to the case. 3. Lead spacing measured at seat only. 4. Position of leads in relation to hex is not controlled. 5. Maximum recommended mounting torque: 20 in-lb. 6. All three leads. 7. Two leads. 8. All three Iocations. 9. In accordance with ASME Y14

18、.5M, diameters are equivalent to x symbology. 10. Threads in accordance with Handbook H28. FIGURE 2. Physical dimensions (TO-61) for 2N1724. Dimension Ltr Inches Millimeters Notes Min Max Min Max A .422 .455 10.72 11.56 B .325 .460 8.26 11.68 C .640 .875 16.26 22.22 6 D .047 .072 1.19 1.83 7 E .095

19、.115 2.41 2.92 7 F .150 3.81 G .090 .150 2.29 3.81 H .570 .610 14.48 15.49 J .340 .415 8.64 10.54 K .667 .687 16.94 17.45 8 L .170 .213 4.32 5.41 M .610 .687 15.49 17.45 N .270 6.86 O .220 .249 5.59 6.32 P .090 2.29 Provided by IHSNot for ResaleNo reproduction or networking permitted without license

20、 from IHS-,-,-MIL-PRF-19500/262G 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qu

21、alifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJAThermal resistance junction

22、 to ambient. RJCThermal resistance junction to case. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-53) and figure 2 (TO-61) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-195

23、00, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6

24、 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other

25、 defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and

26、 II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified in table II herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revi

27、sion of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo repr

28、oduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/262G 6 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of t

29、able I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANTX level 2 Required, TA= +200C (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.1) 9 IEBO, ICES, and hFE111 IEBO, ICES, and hFE1 IEBO= 100 percent of initial value or 100 A dc, whichever is grea

30、ter. ICES= 100 percent of initial value or 100 A dc, whichever is greater. hFE1= 15 percent of initial value. 12 See 4.3.1; 168 hours minimum 13 Subgroup 2 of table I herein; IEBO, ICES, and hFE1 IEBO= 100 percent of initial value or 100 A dc, whichever is greater. ICES= 100 percent of initial value

31、 or 100 A dc, whichever is greater. hFE1= 15 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCE= 10-30 V dc; power shall be applied to achieve TJ= +175C minimum using a minimum power dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No

32、heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement

33、delay time (tMD) = 70 s max. See table II, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. El

34、ectrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN and JANTX) of MIL-PRF-19500 and herein. Electrical measureme

35、nts (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with the applicable steps of 4.5.3 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/262G 7 4.4.2.1 Group B inspect

36、ion, table E-VIB (JAN and JANTX) of MIL-PRF-19500. Subgroup Method Condition B3 1037 VCB 10 V dc, 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and herein. Electrical meas

37、urements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A; weight = 10 pounds; time = 15 s. C2 2036 Test condition D1; torque = 6 inch-ounce; time =15 s (2N1724 only). C2 2036 Stud torque (2N1724 only), test condition D2; torque

38、= 15 inch- pound; time = 15 s. C5 3131 See 4.3.2, RJC= 1.5C/W. C6 1037 VCB 100 V dc, 6,000 cycles. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Elec

39、trical measurements (end-points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the applicable steps of 4.5.3. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measureme

40、nts. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted at a case temperature (TC) of +25C. 4.5.3 Delta requirements. Delta requirements shall be as specified below: (1

41、) (2) (3) (4) Steps Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Collector to emitter cutoff current 3041 Bias condition C, VCE= 60 V dc ICES1100 percent of initial value or 50 A, whichever is greater. 2. Forward - current transfer ratio 3076 IC= 2 A dc VCE= 5 V dc, pulsed

42、(see 4.5.1) hFE220 percent change from initial reading (1) The delta measurements for table E-VIB (JAN and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 3, see 4.5.3 herein, steps 1 and 2. b. Subgroup 4, see 4.5.3 herein, steps 1 and 2. (2) The delta measurements for table E-VII of MIL-PRF-19

43、500 are as follows: Subgroup 6, see 4.5.3 herein, steps 1 and 2. (3) Devices which exceed the table I limits for this test shall not be accepted. (4) Group E, table II herein, subgroups 1 and 2, see 4.5.3 herein, steps 1 and 2. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

44、hout license from IHS-,-,-MIL-PRF-19500/262G 8 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3131 See 4.3.2 ZJXC/W Collector to base breakdown voltage 3011 Bias conditi

45、on D, IC= 200 mA dc; pulsed (see 4.5.1) V(BR)CEO 80 V dc Emitter to base breakdown voltage 3011 Bias condition D, IE= 10 mA dc; pulsed (see 4.5.1) V(BR)EBO 10 V dc Collector to emitter cutoff current 3041 Bias condition C, VCE= 60 V dc ICES1300 A dc Collector to base cutoff current 3036 Bias conditi

46、on D; VCB= 175 V dc ICBO 5 mA dc Emitter to base cutoff current 3041 Bias condition A, VEB= 7 V dc IEBO400 A dc Base emitter voltage 3066 Test condition A; IC= 2 A dc; IB= 200 mA dc; pulsed (see 4.5.1) VBE(sat)1 1.2 V dc Collector to emitter saturated voltage 3071 IC= 2 A dc; IB= 200 mA dc; pulsed (

47、see 4.5.1) VCE(sat)1 0.6 V dc Forward-current transfer ratio 3076 VCE= 15 V dc; IC= 2 A dc; pulsed (see 4.5.1) hFE1 30 120 Forward-current transfer ratio 3076 VCE= 15 V dc; IC= 5 A dc; pulsed (see 4.5.1) hFE215 Forward-current transfer ratio 3076 VCE= 15 V dc; IC= 100 mA dc; pulsed (see 4.5.1) hFE33

48、0 Subgroup 3 High-temperature operation: Collector to emitter cutoff current 3041 TA= +150C Bias condition C; VCE= 60 V dc ICES21.5 mA dc Collector to emitter cutoff current 3041 Bias condition C; VCE= 120 V dc ICES310 mA dc Low-temperature operation : Forward-current transfer ratio 3076 TA= -55C VC

49、E= 15 V dc IC= 2 A dc; pulsed (see 4.5.1) hFE4 15 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/262G 9 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min