DLA MIL-M-38510 30 C-2008 MICROCIRCUITS DIGITAL DTL NAND GATES MONOLITHIC SILICON《单片硅与非门 DTL数字微电路》.pdf

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1、 MIL-M-38510/30C 22 August 2008 SUPERSEDING MIL-M-38510/30B 3 May 2005 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, DTL, NAND GATES MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product her

2、ein shall consist of this specification sheet and MIL-PRF 38535 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, DTL, positive logic NAND gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for

3、each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535. 1.2.1 Device types. The device types are as follows: Device

4、type Circuit 01 Dual, 4-input expandable NAND gate 02 Extendable hex inverter 03 Hex inverter 04 Quadruple, 2-input positive NAND gate 05 Triple, 3-input positive NAND gate 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case

5、outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style A GDFP5-F14 or CDFP6-F14 14 Flat pack B GDFP4-F14 14 Flat pack C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack Comments, suggestions, or questions o

6、n this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to bipolardscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online

7、 database at http:/assist.daps.dla.mil. AMSC N/A FSC 5962 INCH-POUNDInactive for new design after 6 October 1995. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 2 1.3 Absolute maximum ratings. Supply voltage range . -0.5 V dc to +8.0

8、 V dc Input voltage range -1.5 V dc to +5.5 V dc Storage temperature range . -65 to +150C Maximum power dissipation (PD) . 23 mW dc per gate Lead temperature (soldering 10 seconds) . 300C Thermal resistance, junction to case (JC) . (See MIL-STD-1835) Junction temperature (TJ) 175C 1.4 Recommended op

9、erating conditions. Supply voltage (VCC) 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) 1.9 V dc 25C Maximum low level input voltage (VIL) . 1.1 V dc 25C Normalized fanout (each output) . 8 maximum Case operating temperature range (TC) -55 to +125C 2. APPLICABLE DOCUMENT

10、S 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure t

11、he completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications and standards. The following specifications and st

12、andards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specifi

13、cation for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Ord

14、er Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence. Nothing in

15、 this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 3 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this

16、 specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-P

17、RF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. This slash sheet has been modified to allow the manufacturer to use the alternate die/fabrication

18、 requirements of paragraph A.3.2.2 of MIL-PRF-38535 or other alternative approved by the qualifying activity. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein. 3.3.1 Case outlines. The case outlines

19、 shall be as specified in 1.2.3. 3.3.2 Logic diagrams and terminal connections. The logic diagrams and terminal connections shall be as specified on figure 1. 3.3.3 Truth tables and logic equations. The truth tables and logic equations shall be as specified on figure 2. 3.3.4 Schematic circuits. The

20、 schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity and the preparing activity upon request. 3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristic

21、s. The electrical performance characteristics are as specified in table I, and apply over the full recommended case operating temperature range, unless otherwise specified. 3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in ta

22、ble II. The electrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. 3.7.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. For class Q product

23、built in accordance with A.3.2.2 of MIL-PRF-38535 or other alternative approved by the qualifying activity, the “QD“ certification mark shall be used in place of the “QML“ or “Q“ certification mark. 3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit

24、 group number 22 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 4 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions 1/ Device types Min Max Units High-level output voltage

25、 VOH VCC= 4.5 V, IOH= -0.12 mA All 2.85 V Low-level output voltage VOL VCC= 4.5 V, IOL= 12 mA All 0.45 V Low-level input current IIL VCC= 5.5 V All -0.6 -1.50 mA High-level input current IIH VCC= 5.5 V 01, 03 04, 05 0 5.0 A Short circuit output current IOS VCC= 5.5 V, VOUT= 0 V, VIN= GND 2/ All -0.5

26、9 -1.34 mA High-level supply current per gate ICCH1 VCC= 5.0 V, VIN= GND All 1.47 mA High-level supply current per gate ICCH2 VCC= 8.0 V, VIN= GND All 2.75 mA Low-level supply current per gate ICCL VCC= 5.0 V, VIN= OPEN All 3.25 mA Collector cutoff current ICEX VCC= 4.5 V All 100 A Propagation delay

27、 time low-to-high level output tPLH VCC= 5.0 V, CL= 30 pF RL= 3.9 k All 25 112 ns 01, 03 04, 05 10 40 ns Propagation delay time high-to-low level output tPHL VCC= 5.0 V, CL= 50 pF RL= 390 02 10 45 ns 1/ Complete terminal conditions shall be as specified in table III. 2/ Not more than one output shou

28、ld be shorted at a time. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 5 TABLE II. Electrical test requirements. Subgroups (see table III) MIL-PRF-38535 test requirements Class S devices Class B devices Interim electrical parameters

29、 1 1 Final electrical test parameters 1*, 2, 3, 9 1*, 2, 3, 9 Group A test requirements 1, 2, 3, 9, 10, 11 1, 2, 3, 9 Group B electrical test parameters when using the method 5005 QCI option 1, 2, 3, N/A Group C end-point electrical parameters 1, 2, 3, 1, 2, 3 Additional electrical subgroups for Gro

30、up C periodic inspections N/A 10, 11 Group D end-point electrical parameters 1, 2, 3 1, 2, 3 *PDA applies to subgroup 1. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Manage

31、ment (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shall be conducted on all devices prior to qualification and conformance inspection. The following additional criter

32、ia shall apply: a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturers Tec

33、hnology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 o

34、f MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer. c. Additional screening for space level product shall be as specified in MIL-PRF-38535. Prov

35、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 6 4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535. 4.4 Technology Conformance Inspection (TCI). Technology conformance inspection shall be in

36、 accordance with MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, 6, 7 an

37、d 8 shall be omitted. 4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535. 4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows: a. End-point electrical parameters shall be as specified in tab

38、le II herein. b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufactu

39、rers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test metho

40、d 1005 of MIL-STD-883. c. Subgroups 3 and 4 shall be added to the group C inspection requirements for class C devices and shall consist of the tests, conditions, and limits specified for subgroups 10 and 11 of group A. 4.4.4 Group D inspection. Group D inspection shall be in accordance with table V

41、of MIL-PRF-38535. End-point electrical parameters shall be as specified in table II herein. 4.5 Methods of inspection. Methods of inspection shall be specified as follows: 4.5.1 Voltage and current. All voltages given are referenced to the microcircuit ground terminal. Currents given are conventiona

42、l and positive when flowing into the referenced terminal. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 7 FIGURE 1. Logic diagram and terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without

43、 license from IHS-,-,-MIL-M-38510/30C 8 FIGURE 1. Logic diagram and terminal connections - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 9 Device type 01 Truth table each gate Input Output A B C D E Y H H H H H L L H H H

44、H H H L H H H H H H L H H H H H H L H H H H H H L H L L L L L H Positive logic: Y = EDCBA Device types 02 and 03 Truth table each gate Input Output A Y L HH L Positive logic: Y = A FIGURE 2. Truth tables. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

45、-,-MIL-M-38510/30C 10 Device type 04 Truth table each gate Input Output A B Y L L HH L H L H H H H L Positive logic: Y = BA Device type 05 Truth table each gate Input Output A B C Y L L L H H L L HL H L H H H L H L L H H H L H H L H H H H H H L Positive logic: Y = CBA FIGURE 2. Truth tables - Contin

46、ued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/30C 11 NOTE: All resistance values shown are nominal FIGURE 3. Schematic circuits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-

47、M-38510/30C 12 tPLHtPHLRL3.9 k 390 5% CL30 pF min 50 pF min TEMP (C) VM1(volts) VM2(volts) 25 1.5 1.5 125 1.2 1.2 -55 1.7 1.7 NOTES: 1. The generator has the following characteristics: VGEN= 4.0 V minimum, tTLH= 10 ns 90%, tTHL= 10 ns 90%, PRR = 500 kHz, tP= 1s. 2. All diodes are 1N4150 or equivalen

48、t. 3. CLincludes all jig and probe capacitance. FIGURE 4. Switching time test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE III. Group A inspection for device type 01. 1/ Cases A,B,C,D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Test limits Subgroup Symbol MIL- STD-883 method Test No. 1A 1B 1E 1C 1D 1Y GND 2Y 2A 2B 2E 2C 2D VCCMeas. terminal Min Max Unit VOLVOL 3007 3007 1 2 1.9 V 1.9 V 1.9 V 1.9 V 12 mA GND “ 12 mA