DLA MIL-M-38510 261-1989 MICROCIRCUITS MEMORY DIGITAL CMOS 32K X 8-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON.pdf

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1、I INCH-POUND I MIL-M-38510/261 27 MARCH 1989 MILITARY SPECIFICATION MICROCIRCUITS, MEMORY, DIGITAL, CMOS READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE This specification is approved for use by all Depart- ments and Agencies of the Department of Defense

2、. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, CMOS, 32K words/8-bit, 5.0-volts electrically erasable programmable read-only memory microcircuits. Two product assurance classes (B and SI, a choice of lead finish and three package types are provided fo

3、r each device and are reflected in the complete part number. 1.2 Part number. The part number shall be in accordance with MIL-M-38510. 1.2.1 Device types. The device types shall be as shown in the following: Device Circuit Access Write Write Software o1 32K words/8-bit 350 ns 10 ms Byte/page 10,000

4、cy No 02 32K words/8-bit 300 ns 10 ms Byte/page 10,000 cy No 03 32K words/8-bit 250 ns 10 ms Byte/page 10,000 cy No 04 32K words/8-bit 200 ns 10 ms Byte/page 10,000 cy No 05 32K words/8-bit 150 ns 10 ms Byte/page 10,000 cy No 06 32K words/8-bit 250 ns 10 ms Byte/page 100,000 cy No 07 32K words/8-bit

5、 350 ns 10 ms Byte/page 10,000 cy Yes 08 32K words/8-bit 300 ns 10 ms Byte/page 10,000 cy Yes o9 32K words/8-bit 250 ns 10 ms Byte/page 10,000 cy Yes 10 32K words/8-bit 200 ns 10 ms Byte/page 10,000 cy Yes 11 32K words/8-bit 150 ns 10 ms Byte/page 10,000 cy Yes 12 32K words/8-bit 250 ns 10 ms Byte/p

6、age 100,000 cy Yes type organization time speed mode Endurance data protect 1.2.2 Device class. The device class shall be the product assurance level as defined in MIL-M-38510. 1.2.3 Case outlines. The case outlines shall be designated in appendix C of MIL-M-38510, and as follows: Outline letter Cas

7、e outline u. Figure 1 (28-lead, .660“ x .560“ x .100“), pin grid array X D-10 (28-lead, 1.490“ x .610“ x .232“), dual-in-line package Y C-12 (32-terminal, .560“ x .458“ x .120“), rectangular chip Z F-12 (28-lead, .740“ x .420“ x .130“), flat package carrier package IBeneficial comments (recommendati

8、ons, additions, deletions) and any pertinent I Idata which may be of use in improving this document should be addresssed to: I IRome Air Development Center, RBE-2, Griffiss AFB, NY 13441, by using the self- I I addressed Standardization Document Improvement Proposal (DD Form 1426) appearing I lat th

9、e end of this document or by letter. I AMSC N/A FSC 5962 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. THIS DOCUMENT CONTAINS 3 4 PAGES. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-385L0/26 57 W 7779706 0

10、06LLO 4 M M 1 L -M - 38 5 1 O / 2 6 1 1.3 -e All input and output voltages (including Vcc) O/- - Voltage for chip clear (Vh)- - - - - - - - - - - - - Operating case temperature range - - - - - - - - - - Storage temperature range- - - - - - - - - - - - - - Lead temperature (soldering, 10 seconds) - -

11、 - - - - Thermal resistance, junction-to-case (Jc) - - - - - Maximum power dissipation (Pg) 2/ - - - - - - - - Junction temperature (VJ) 3/- - - - - - - - - - - - Endurance: Device types 01-05 and 07-11 - - - - - - - - - - - Device types O6 and 12 - - - - - - - - - - - - - - - Data retention - - - -

12、 - - - - - - - - - - - - - 1.4 Recommended Operating conditions. Supply voltage range (Vcc) - - - - - - - - - - - - - Case operating temperature range (TC)- - - - - - - - Input voltage, low range (VIL) - - - - - - - - - - - Input voltage, high range (VIH)- - - - - - - - - - - High level chip erase v

13、oltage (vh) - - - - - - - - - 2. APPLICABLE DOCUMENTS -0.5 V dc to +6.0 V dc t15.0 V dc -550C to +1250C -65C to +1500C +3000C Se e M IL - M - 3 8 5 1 O., appendix C 1.0 w 91750C 10,000 cycles/byte, m9nimum 100,000 cycles/byte, mi nimum 10 years, minimum +4.5 V dc to +5.5 V dc -55C to +1250C +2.0 V d

14、c to Vcc+O.3 V dc 12 V dc to 13 V dc -0.1 V dc to +0.8 V dc 2.1 Government documents. . The following specifications, ment to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and

15、Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION M I L I PAR Y MIL-M-38510 - Microcircuits, General Specification for Mieroel ectronics. STANDARD W I L 1 TAR Y MIL-STD-883 - Test Methods and Procedures for Microelectronics. (Unless otherwise indicated, co

16、pies of federal and military specifications, standards, and handbooks are available from the Naval Publications and Forms Center, (ATTN: NPODS), 5801 Tabor Avenue9 Philadelphia, PA 19120-5099.) -tases are with respect to ground. manner throughout the remainder of this specification unless otherwise

17、noted. - 21 Under worse case operating conditions. 3/ Maximum junction temperature shall not. be exceeded except for allowable short Pin voltages will be stated in this - duration burn-in screening conditions in accordance with method 5004 of rd1 L -STD- 883. 2 Provided by IHSNot for ResaleNo reprod

18、uction or networking permitted without license from IHS-,-,-VIL-M-38510/261 57 7777706 OObLLL 6 W MIL-M-38510/261 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated detail specifications, specification

19、sheets, or MS standards), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Detail specification. accordance with MIL-M-38510, The individual item requirements s

20、hall be in and as specified herein. 3.2 Design, construction, and physical dimensions. The and physical dimensions shall be as specified In MIL -M-385 design, cons 10 and herein t ructi 3.2.1 Terminal connections. The terminal connections shall be as specified on 3.2.2 Truth table, 3.2.2.1 Unprogram

21、med or erased devices. The truth table for unprogrammed 3.2.2.2 Pro rammed devices. The requirements for supplying programmed devices 3.2.3 Case outlines. The case outlines shall be as specified in 1.2.3. 3.3 Lead material and finish. The lead material and finish shall be in 3.4 Electrical performan

22、ce characteristics. Unless otherwise specified, the figure 2. devices shall be as specified on tigure 3. are not part o: this specification. accordance with MIL - M 3851 O (see 6.5). electrical performance characteristics are as soecified in table I. and shall - apply over the full case operating te

23、mperature ;ange specified. Tst conditions for the specified electronic performance characteristics are as specified in table I. A pin for pin conditions and testing sequence for table I parameters shall be maintained and available upon request from the qualifying activity, on qualified devices. 3.5

24、Electrical test requirements. The electrical test requirements for each device class shall be the subgroups of table II. The electrical tests for each subgroup are described in table I. 3.6 Marking. Marking shall be in accordance with MIL-M-38510 and 1.2 herein. At the option of the manufacturer, th

25、e country of origin may be omitted from the body of the microcircuit but shall be retained on the initial container. 3.7 shall Mi croci rcui t group assignment. be in microcircuit group number The devices covered by this specification 42 (see MIL-M-38510, appendix E). 3.8 Processin of EEPROMs. A pro

26、visions herein Shall be satis 11 test fied by ing requirements and the manufacturer pr i quality a or to del ssurance i very. 3.8.1 Conditions of the sup lied devices. Devices will be supplied in an unprogrammed or cleared state. No provision will be made for supplying programmed devi ce s. 3.8.2 Er

27、asure of EEPROMs. When specified, devices shall be erased in 3.8.3 Programming of EEPROMs. When specified, devices shall be programmed in accordance with the procedures and characteristics specified in 4.6.4. accordance with the procedures and characteristics specified in 4.6.3. 3 Provided by IHSNot

28、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-M I L - M- 3 8 5 1 O / 2 6 1 3.8.4 Verification of state of EEPROMs. When specified, devices shall be verified as either programmed to the specified pattern or erased. As a minimum, verification shall consist of performi

29、ng a read of the entire array to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure and the device shall be removed from the lot or sample. of EEPKOMs. In order to reduce the probability of ing power supply sequences

30、 shall be observed: a. A logic high state shall be applied to WE and CE, or both at the same b. A logic high state shall be applied to FE and E, or both at the same time or before the application of Vcc. time or before the removal of Vcc. 4. QUALITY ASSURANCE PROVISION slection. Inspection procedure

31、s shall be in accordance with 5m MIL-STD-883, except as modified herein, 4.2 Screenin . Screening shall be in accordance with method 5004 of MIL-STDd shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall appTy: a. Burn-in

32、 test, method 1015 of MIL-STD-883. (1) Test condition 8, E, or F using the circuits shown on figure 4 (or (2) TA = +125C, minimum. (3) Prior to burn-in, the devices shall be programmed (see 3.8.31 with the data pattern shown on figure 5. The pattern shall be read before and after burn-in. Devices ha

33、ving bits not in the proper state after burn-in shall constitute a device failure and shall be included in the PDA calculation (see 4.2). equivalent). b. Interim and final electrical test parameters shall be as specified fn table II. Interim electrical test parameters prior to burn-in shall be perfo

34、rmed by the manufacturer. The following data patterns shall be included in group A, subgroups 7 or 8 (high and low temperature): All Os, all lse checkerboard, and checkerboard complement. Each temperature shall include, at a minimum, the programming of one data pattern. Subgroups 9, 10, and 11 shall

35、 be performed on devices containing a checkerboard and a Checkerboard complement data patterns or equivalent a1 ternatlng bit and complementary data patterns. c. Percent defective allowable (PDA): The PDA for class S and B devices shall be as specified in MIL-M-38510. The PDA is specified as 5 perce

36、nt for class 6 devices based on faflures from group A, subgroups 1 and 7 after cooldown, at final electrical test in accordance with method 5004 of MIL-STD-883, and with no intervening electrical measurements. All screening failures of group A, subgroups 1 and 7 after burn-in divided by the total nu

37、mber of devices submitted to burn-in in that lot shall be used to determine the percent defective for that lot, and the lot shall be accepted or rejected based on the PDA. 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/261 d. Those dev

38、ices whose measured characteristics, after burn-in, exceed the specified delta (A) limits or electrical parameter limits specified in table I, subgroup 1, are defective and shall be removed from the lot. The verified failures divided by the total number of devices in the lot initially submitted to b

39、urn-in shall be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified PDA. method 1033 of MIL-STD-883, prior to burn-in (e.ga, may be performed at wafer sort) shall be included as part of the screening procedure, with the following condi

40、tions: (1) Cycling may be block, byte, or page at equipment room ambient e. An endurance test including a data retention bake, in accordance with temperature and shall cycle all bytes for a minimum of 10,000 cycles for device types O1 through 05 and 07 through 11, and a minimum of 50,000 cycles for

41、device types 06 and 12. After cxcling, perform a high temperature unbiased bake for 48 hours at +150.C, minimum. The storage time may be accelerated by using higher temperature in accordance with the Arrhenius Relationship: (2) “1 -572 - 1 - AF = e AF = acceleration factor (unitless quantity) = tl/t

42、2 T = temperature in Kelvin (i.e., ti+ 273) tl = time (hours) at temperature T1 t2 = time (hours) at temperature T K = Boltzmanns constant I 8.62 x 18-5eV/TK activation energy (EA) of 0.6 volt The maximum storage tempgrature shall not exceed +200fC for packaged devices or +300.C for unassembled devi

43、ces. All devices shall be programmed with a charge opposite the state that the cell would read in its equilibrium state (e.g., worst case pattern). (3) Read the data retention pattern and test using subgroups 1, 7, and 9 (minimum, e.g., high temperature equivalent subgroups 2, 8A, and 10 may be used

44、) after cycling and bake, prior to burn-in. Devices having bits not in the proper state after storage shall constitute a device failure and shall be removed from the lot. using an apparent f. After the completion of all screening, the devices shall be erased and verified prior to delivery. 4.3 Quali

45、fication inspection. Qualification inspection shall be those in accordance with MIL-M-38 510. Inspections to be performed shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). 4.3.1 Qualification extension. When authorized

46、by the qualifying activity, for qualification inspection, if a manufacturer qualifies to a faster device type which is manufactured identically to a slower device type on this specification, the slower device type may be part I qualified without further qualification testing. At the manufacturers re

47、quest, the slower device types will be added to the QPL. 4.4 Quality conformance inspections, Quality conformance inspection shall be in accordance with MIL - M 38 510. Inspections to be performed shall be those specified in method 5005 of MIL-STO-883 and herein for groups A, B, C, and D inspections

48、 (see 4.4.1 through 4.4.4). 5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-385L0/2hL 57 MIL-M-38510/261 TABLE I. Electrical gerformance characteristics. I I I I I Conditions I Group A I I Limits I I I Test. I Symbol I -55C - m M I L -M - 38

49、5 1 O/ 2 6 1 I Q I- Q 61 E a P 7 3 N 2 (3 X - U aJ F w . I-FICUWLW O PI a aI 3 C *I- C, E O U I E O v- m 3 9 3 M LL 18 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-.- MIL-M-38510/2bL 57 7777706 OObL27 T MIL-M-38510/261 I v aJ - + O c r- r- - 3 VI al c VI / J I J n a O J W (3 a Q I F O v- aI E 3 al o I- aJ + E aJ CI E aJ m B n VI al n aJ u U .I- C ( AAX x 55x ATA X 1 I 21 3l I