DLA MIL PRF 19500 581C B-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON AMPLIFIER TYPES 2N4237 2N4238 AND 2N4239 JAN JANTX AND JANTXV.pdf

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1、 MILPRF19500/581C 21 February 2013 SUPERSEDING MILPRF19500/581B 10 March 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N4237, 2N4238, AND 2N4239, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of t

2、he Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, amplifier transistors. Three levels of product assurance are p

3、rovided for each device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package style is TO205AD (formerly TO39) in accordance with figure 1. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PTTA= +25C (1) PTTC= +25C (2) RJARJCVCBOVCEOVEBOICIBTJand TSTGW W C/W C/

4、W V dc V dc V dc A dc A dc C 2N4237 2N4238 2N4239 1.0 1.0 1.0 6.0 6.0 6.0 175 175 175 18 18 18 50 80 100 40 60 80 6.0 6.0 6.0 1.0 1.0 1.0 0.5 0.5 0.5 65 to +200 (1) See figure 2. (2) See figure 3. AMSC N/A FSC 5961INCHPOUND The documentation and process conversion measures necessary to comply with t

5、his document shall be completed by 21 August 2013. Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify th

6、e currency of this address information using the ASSIST Online database at https:/assist.dla.mil. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/581C 2 1.4 Primary electrical characteristics. Unless otherwise specified, at TA= +25C. Limi

7、ts hFEat VCE= 1.0 V dc (1) hfe f = 10 MHz Cobof = 1.0 MHz VCE(sat)21/ IC= 1.0 A dc VBE(sat)21/ IC= 1.0 A dc hFE1 IC= 100 mA dc hFE2 IC= 250 mA dc hFE3 IC= 500 mA dc VCE= 10 V dc IC= 100 mA dc VCB= 10 V dc IC= 0 IB= 0.1 A dc IB= 0.1 A dc Min Max 30 30 150 30 3.0 pF 100 0.6 V dc 1.5 (1) Pulsed see 4.5

8、.1. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort

9、 has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbook

10、s. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, Ge

11、neral Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, P

12、hiladelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable la

13、ws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manu

14、facturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/581C 3 Dimensions Ltr Inches Millimet

15、ers Notes Min Max Min Max CD .305 .355 7.75 9.02 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08TP 3 LD .016 .021 0.41 0.53 4 LL .500 .750 12.70 19.05 4 LU .016 .019 0.41 0.48 4 L1 .050 1.27 4 L2 .250 6.35 4 TL .029 .045 0.74 1.14 5 TW .028 .034 0.71 0.86 6 P .100 2.54 7 Q .050 1.27 8

16、R .010 0.25 9 45 TP 45 TP 3 Notes 1, 2, 8, 9 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Lead designation shall be as follows: Terminal 1 is the emitter, terminal 2 is the base, and terminal 3 is the collector. Lead number three is electrically connecte

17、d to case. 3. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 4. Dimension LD applies between L1and L2. Dimen

18、sion LD applies between dimension L2and LL minimum. 5. Dimension TL is measured from dimension HD maximum. 6. Beyond dimension r maximum, dimension TW shall be held for a minimum length of .011 inch (0.28 mm). 7. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is contr

19、olled for automatic handling. 8. Details of outline in this zone are optional. 9. Dimension r applied to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO205AD formerly TO39). Provided by IHSNot for ResaleNo rep

20、roduction or networking permitted without license from IHS-,-,-MILPRF19500/581C 4 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MILPRF19500. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case.

21、3.4 Interface and physical dimensions. The interface requirements and physical dimensions shall be as specified in MILPRF19500 and on figure 1 (TO205AD, formerly TO-39) herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, a

22、nd herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Polarity. The identification of terminals of the device package shall be as shown on figure 1. Terminal 1 shall be connected to the emitter, terminal 2 shall be connected to the ba

23、se, and terminal 3 shall be connected to the collector. The collector shall be electrically connected to the case. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test

24、requirements. The electrical test requirements shall be as specified in table I herein. 3.7 Marking. Marking shall be in accordance with MILPRF19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will

25、affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualifica

26、tion inspection. Qualification inspection shall be in accordance with MILPRF19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet t

27、hat did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted

28、without license from IHS-,-,-MILPRF19500/581C 5 4.3 Screening (quality levels JANTX and JANTXV only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of

29、 table I herein shall not be acceptable. Screen (see table EIV of MILPRF19500) Measurement JANTX and JANTXV level 3c (1) Thermal impedance (see 4.3.1) 11 ICBOand hFE212 See 4.3.2. 13 See table I, subgroup 2 herein ICBO= 100 percent of initial value, or 10 nA dc whichever is greater; hFE2= 15 percent

30、 of initial value. (1) Thermal impedance shall be performed anytime before screen 10 and does not need to be repeated in the screening requirements. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test method 3131 of MILSTD750 using the guidelines in

31、 that test method for determining IH, IM, tH, tSW, (and VCwhere appropriate). The thermal impedance limit used in 4.3, screen 3c and table I, subgroup 2 shall comply with the thermal impedance graph on figures 4 and 5 (less than or equal to the curve value at the same tHtime) and shall be less than

32、the process determined statistical maximum limit as outlined in test method 3131 of MILSTD750. 4.3.2 Power burn-in conditions. Power burn-in conditions shall be as follows: VCB= 10 to 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum, TAambient

33、rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and perform

34、ance history will be essential criteria for burn-in modification approval. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500, and as specified herein. If alternate screening is being performed in accordance with MILPRF19500, a sample of screened devices shall

35、 be submitted to and pass the requirements of table I, subgroups 1 and 2 herein. Table EVIB, subgroup 1, of MILPRF19500 is not required to be performed again since solderability and resistance to solvents testing is performed in table I, subgroup 1 herein. 4.4.1 Group A inspection (small die flow).

36、Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. The small die flow part of table EV, subgroup 1 shall apply. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection (small die flow). Gr

37、oup B inspection shall be conducted in accordance with the test methods and conditions specified for the applicable steps in table EVIC of MILPRF19500 and herein. Electrical measurements (end-points) and delta requirements shall be taken after each step in 4.4.2.1. Electrical measurements (end-point

38、s) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/581C 6 4.4.2.1 Group B small die flow inspection

39、details (for quality levels JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MILPRF19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause a

40、nd corrective action. Whenever a failure is identified as wafer lot, or wafer processing related, the entire wafer lot, and related devices assembled from the wafer lot, shall be rejected unless an appropriate determined corrective action to eliminate the failure mode has been implemented and the de

41、vices from the wafer lot are screened to eliminate the failure mode. Step Method Conditions 1 1026 Steady-state operation life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 device

42、s, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 device

43、s, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.2 Group B small die flow sample selection (for quality levels JAN, JANTX, and JANTXV). Samples selected for group B inspection shall meet the following requirements: a. Samples shall be selected ra

44、ndomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. See MILPRF19500. b. Samples shall be chosen from an inspection lot that has passed table I, subgroup 2, conformance inspection. When the final lead finish is solder, or any plating prone to oxidation at high t

45、emperature, the samples for life test may be selected prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table EVII of MILPRF19500 and as follows herein. Electric

46、al measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Conditions C2 2036 Test condition E. C5 3131 See 1.3. 4.4.3.1 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended pack

47、age type and lead finish procured to the same specification which is submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the applicatio

48、n of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specifi

49、ed for subgroup testing in table EIX of MILPRF19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without