ASTM F1893-2011 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices《测量半导体器件电离剂量率存活性和烧断的指南》.pdf

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1、Designation: F1893 11Guide forMeasurement of Ionizing Dose-Rate Survivability andBurnout of Semiconductor Devices1This standard is issued under the fixed designation F1893; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year o

2、f last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide defines the detailed requirements for testingsemiconductor devices for short-pulse high dose-rateionizati

3、on-induced survivability and burnout failure. The testfacility shall be capable of providing the necessary dose ratesto perform the measurements. Typically, large flash X-ray(FXR) machines operated in the photon mode, or FXR e-beamfacilities are utilized because of their high dose-rate capabili-ties

4、. Electron LinearAccelerators (LINACs) may be used if thedose rate is sufficient. Two modes of test are described: (1)Asurvivability test, and (2) A burnout failure level test.1.2 The values stated in International System of Units (SI)are to be regarded as standard. No other units of measurementare

5、included in this standard.2. Referenced Documents2.1 ASTM Standards:2E170 Terminology Relating to Radiation Measurements andDosimetryE668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for DeterminingAbsorbed Dosein Radiation-Hardness Testing of Electronic DevicesE1894 Guide

6、for Selecting Dosimetry Systems for Applica-tion in Pulsed X-Ray SourcesF526 Test Method for Measuring Dose for Use in LinearAccelerator Pulsed Radiation Effects Tests2.2 ISO/ASTM Standard:251275 Practice for Use of a Radiochromic Film DosimetrySystem3. Terminology3.1 Definitions:3.1.1 burnout failu

7、re level testa test performed to deter-mine the maximum dose-rate level the device survives and theminmum dose-rate level where the device experiences burnout.3.1.1.1 DiscussionIn such a test, semiconductor devicesare exposed to a series of irradiations of increasing dose-ratelevels. The maximum dos

8、e rate at which the device survives isdetermined for worst-case bias conditions. The burnout failurelevel test is always a destructive test.3.1.2 dose ratethe amount of energy absorbed per unitmass of a material per unit time during exposure to theradiation field (typically, expressed in units of Gy

9、(material)/s).For pulsed radiation sources, dose rate typically refers to thepeak dose rate during the pulse.3.1.3 dose rate induced latchupregenerative device actionin which a parasitic region (for example, a four (4) layerp-n-p-n or n-p-n-p path) is turned on by the photocurrentgenerated by a puls

10、e of ionizing radiation, and remains on foran indefinite period of time after the photocurrent subsides.The device will remain latched as long as the power supplydelivers voltage greater than the holding voltage and currentgreater than the holding current. Latchup disrupts normalcircuit operation in

11、 some portion of the circuit, and may alsocause catastrophic failure due to local heating of semiconduc-tor regions, metallization or bond wires.3.1.4 failure conditiona device is considered to haveundergone burnout failure if the device experiences one of thefollowing conditions.(1) functional fail

12、urea device failure where the device undertest, (DUT) fails functional tests following exposure.(2) parametric failurea device failure where the deviceunder test, (DUT) fails parametric measurements after expo-sure.1This guide is under the jurisdiction of Committee F01on Electronics , and is thedire

13、ct responsibility of Subcommittee F01.11 on Nuclear and Space RadiationEffects.Current edition approved Jan. 1, 2011. Published January 2011. Originallyapproved in 1998. Last previous edition approved in 2003 as F1893-98(2003). DOI:10.1520/F1893-11.2For referenced ASTM standards, visit the ASTM webs

14、ite, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United Stat

15、es.3.1.4.1 DiscussionFunctional or parametric failures maybe caused by total ionizing dose mechanisms. See interferencesfor additional discussion.3.1.5 high dose-rate burnoutpermanent damage to asemiconductor device caused by abnormally large currentsflowing in junctions and resulting in a discontin

16、uity in thenormal current flow in the device.3.1.5.1 DiscussionThis effect strongly depends on themode of operation and bias conditions. Temperature may alsobe a factor in damage to the device should latchup occur priorto failure. Latchup is known to be temperature dependent.3.1.6 ionizing dose rate

17、 responsethe transient changeswhich occur in the operating parameters or in the output signalof an operating device when exposed to an ionizing radiationpulse. See Terminology E170 for a definition of ionization.Within this standard, the scope of the dose rate response isrestricted to consideration

18、of linear microcircuits.3.1.7 ionizing radiation effectsthe changes in the electri-cal parameters of a microelectronic device resulting fromradiation-induced trapped charge. These are also sometimesreferred to as “total dose effects.”3.1.8 latchup windowa latchup window is the phenom-enon in which a

19、 device exhibits latchup in a specific range ofdose rates. Above and below this range, the device does notlatchup. A device may exhibit more than one latchup window.This phenomenon has been observed for some complementarymetal-oxide semiconductor (CMOS) logic devices, oxide side-wall logic and large

20、 scale integration (LSI) memories and mayoccur in other devices.3.1.9 survivability testA “pass/fail” test performed todetermine the status of the device after being exposed to apredetermined dose-rate level. The survivability test is usuallyconsidered a destructive test.4. Summary of Guide4.1 Semic

21、onductor devices are tested for burnout during andafter exposure to an ionizing high dose-rate radiation pulse.The measurement is deemed as a survivability test when thetest criteria is a pass/fail measurement at a predetermineddose-rate level, or deemed as a burnout failure level test whenthe maxim

22、um passing dose-rate level and the minimum failingdose rate level for burnout is determined experimentally.4.2 The following quantities are unspecified in this guideand must be agreed upon between the parties to the test:4.2.1 The maximum ionizing (total dose to which thedevices will be subjected du

23、ring the test),4.2.2 The maximum dose rate to which the devices will besubjected during the test, and4.2.3 The bias conditions to which the devices will besubjected during the test.5. Significance and Use5.1 The use of FXR or LINAC radiation sources for thedetermination of high dose-rate burnout in

24、semiconductordevices is addressed in this guide. The goal of this guide is toprovide a systematic approach to testing semiconductor de-vices for burnout or survivability.5.2 The different types of failure modes that are possible aredefined and discussed in this guide. Specifically, failure can bedef

25、ined by a change in device parameters, or by a catastrophicfailure of the device.5.3 This guide can be used to determine if a device survives(that is, continues to operate and function within the specifiedperformance parameters) when irradiated to a predetermineddose-rate level; or, the guide can be

26、 used to determine thedose-rate burnout failure level (that is, the minimum dose rateat which burnout failure occurs). However, since this latter testis destructive, the minimum dose-rate burnout failure levelmust be determined statistically.6. Interferences6.1 There are several interferences that n

27、eed to be consid-ered when this test procedure is applied.6.2 Ionizing Dose DamageDevices may be permanentlydamaged by the accumulation of ionizing dose. This limits thenumber of radiation pulses that can be applied during burnouttesting. The ionizing dose sensitivity depends on fabricationtechnique

28、s and device technology. Metal-oxide, semiconductor(MOS) devices are especially sensitive to ionizing dose dam-age; however, bipolar devices with oxide-isolated sidewalls orbipolar linear circuits may also be affected by low levels ofionizing dose. The maximum ionizing total dose exposure ofthe devi

29、ces under test must not exceed fifty percent (50 %) oftheir typical ionizing dose failure level for that specific parttype to ensure that device failure is caused by the transient doserate, and not by the total accumulated ionizing total dose.6.2.1 Radiation Level Step SizeThe size of the stepsbetwe

30、en successive radiation pulses (that is, the dose-rateincrement) limits the accuracy of the determination of theburnout failure level.6.3 LatchupSome types of integrated circuits are suscep-tible to latchup during transient radiation exposure. If latchupoccurs, the device will not function correctly

31、 until power istemporarily removed and reapplied. Permanent damage (burn-out) may also occur during latchup; it is primarily caused by asubstantial increase in power supply current that leads toincreased power dissipation, localized heating, or both.Latchup is temperature dependent and testing at el

32、evatedtemperature is required to establish worst-case operating con-ditions for latchup. Latchup testing is addressed elsewhere.6.4 Charge Build-up DamageDamage to a device mayoccur due to direct electron irradiation of the DUT leads. Whenusing direct electron irradiations (see Section 7), all devic

33、eleads must be shielded from the electron beam to reduce chargepickup that could cause abnormally large voltages to begenerated on internal circuitry and produce damage not relatedto ionizing dose-rate burnout.6.5 Bias and Load ConditionsBias and load conditionsmay affect the survivability and burno

34、ut response. Usually, theobjective of the test is to determine the dose-rate survivabilityor burnout under worst-case operating conditions.6.5.1 Input BiasUnless otherwise specified, the input biascondition shall be chosen to provide the worst-case operatingconditions. For example, for digital devic

35、es, input pins that arein the high state should be tied directly to the supply voltage.For analog devices, input voltages generally should be at theF1893 112maximum levels expected to be used. For both digital andanalog devices, it is desirable to perform the burnout test usingat least two different

36、 input conditions, such as minimum inputlevels and maximum input levels, or alternately with half theinputs tied high and the remaining tied low.6.5.2 Output LoadingUnless otherwise specified, theDUT outputs shall be chosen to provide the worst-caseconditions for device operation. For digital device

37、s, worst caseconditions should include maximum fan-out. For analog de-vices, worst-case conditions should include maximum outputvoltage or load current. For both digital and analog devices, itmay be desirable to perform the burnout test using at least twodifferent output conditions.6.5.3 Operating V

38、oltageUnless otherwise specified, test-ing shall be performed using maximum operating voltages. Thetest setup shall be configured such that the transient powersupply photocurrent shall not be limited by the external circuitresistance or lead inductance. Power supply stiffening capaci-tors shall be i

39、ncluded to keep the power supply voltage fromvarying more than 10 % of the specified value during and afterthe radiation pulse.6.6 Over-StressThe high dose-rate burnout test should beconsidered destructive. Peak photocurrents in excess of 2 to 3amperes can occur during these tests. These large curre

40、nts canproduce localized metallization or semiconductor melting thatis not readily detected by electrical tests, and both, but mayadversely affect device reliability. Devices that exceed themanufacturers absolute limits for current or power duringburnout tests should not be used in high-reliability

41、applica-tions.6.7 Test TemperaturesTests shall be performed at ambienttemperature, or at a temperature agreed upon between theparties to the test. If tests are performed in a vacuum,overheating may become an issue, requiring control of thedevices temperature.7. Apparatus7.1 GeneralThe apparatus used

42、 for tests should include asa minimum, the radiation source, dosimetry equipment, a testcircuit board, line drivers, cables and electrical instrumentationto measure the transient response, provide bias, and performfunctional tests. Precautions shall be observed to obtain anelectrical measurement sys

43、tem with ample shielding, satisfac-tory grounding, and low noise from electrical interference orfrom the radiation environment.7.1.1 Radiation SourceThe most appropriate radiationsource for high dose-rate burnout tests is a FXR machine. Therequired dose rate for burnout cannot usually be achieved us

44、ingan electron linear accelerator (LINAC) because LINACs typi-cally cannot produce a sufficiently high dose rate over thecritical active area of the device under test; however, someLINACs are capable of meeting these requirements. Linearaccelerators shall be used only with agreement of all parties t

45、othe test.7.1.2 Flash X-ray (Photon Mode)The choice of facilitiesdepends on the available dose rate as well as other factorsincluding photon spectrum, pulse width and electron end-pointenergy. The selection of the pulse width is affected by; (a), thedose rate required, and (b), the ionizing dose acc

46、umulation perpulse. Finally, the FXR electron end-point energy must begreater than 1 MeV to ensure that the resulting bremsstrahlungphotons have sufficient energy to penetrate the DUT.7.1.3 Flash X-ray (E-beam Mode)A FXR or LINACoperated in the e-beam mode generally provides a higher doserate than s

47、imilar machines operated in the photon mode.However, testing in the e-beam mode requires that appropriateprecautions be taken and special test fixtures be used to ensuremeaningful results. The beam produces a large magnetic field,which may interfere with the instrumentation, and can inducelarge circ

48、ulating currents in device leads and metals. The beamalso produces air ionization, induced charge on open leads, andunwanted cable currents and voltages. For FXRs, E-beamtesting is generally performed with the DUT mounted in avacuum to reduce air ionization effects. Special dosimetrytechniques are r

49、equired to ensure proper measurement of thedose. See Guide E1894 for information on the selection ofdosimetry systems. Finally, the FXR or LINAC-electron end-point energy must be greater than 2 MeV to ensure devicepenetration. Some necessary precautions are:7.1.3.1 The electron beam must be constrained to the regionthat is to be irradiated. Support circuits and components mustbe shielded. Beam uniformity shall be determined by the testrequirements.7.1.3.2 The electron beam must be stopped within the testchamber and returned to the FXR to prevent unwanted