JEDEC JESD311A-1981 Measurement of Transistor Noise Figure at MF HF and VHF.pdf

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1、JEDEC STANDARD Measurement of Transistor Noise Figure at MF, HF, and VHF JESD311A (Previously known as RS-311-A and/or EIA-311-A) NOVEMBER 1981 (Reaffirmed: April 1999, March 2009) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepare

2、d, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating

3、interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adop

4、ted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information in

5、cluded in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ult

6、imately become an ANSI standard. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below,

7、 or call (703) 907-7559 or www.jedec.org Published by JEDEC Solid State Technology Association 2009 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the indiv

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10、 22201-2107 or call (703) 907-7559 EIA STANDARD MEASUREMENT OF TRANSISTOR NOISE FIGURE AND EFFECTIVE INPUT NOISE TEMPERATURE AT MF, HF AND VHF M-3 11 -A I (Revision of RS-311) (Rescissio?f RS-203) 1 NOVEMBER 1981 (Reaffirmed, April 1999) Engineering Department ELECTRONIC INDUSTRIES ASSOCIATION NOTIC

11、E EIA Engineering Standards and Publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay th

12、e proper product for his particular need. Existence of such Standards and Publications shall not in any respect preclude any member or non-member of EIA from manufacturing or selling products not conforming to such Standards and Publications, nor shall the existence of such Standards and Publication

13、s preclude their voluntary use by those other than EIA members, whether the standard is to be used either domestically or internationally. Recommended Standards and Publications are adopted by EIA without regard to whether or not their adoption may involve patents on articles, materials, or processe

14、s. By such action, EIA does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the Recom- mended Standard or Publication. This EIA Recommended Standard is considered to have international stan- dardization implications, but the IEC (or ISO) a

15、ctivity has not progressed to the point where a valid comparison between the EIA Recommended Standard and the IEC (or ISO) Recommendation can be made. Published by ELECTRONIC INDUSTRIES ASSOCIATION Engineering Department 2001 Eye Street, N.W. Washington, D.C. 20006 Copyright 1981 ELECTRONIC INDUSTRI

16、ES ASSOCIATION All rights reserved Printed in U.S.A. RS-311-A Paragraph 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 APPENDIX I APPENDIX II APPENDIX III APPENDIX IV MEASUREMENT OF TRANSISTOR NOISE FIGURE AND EFFECTIVE INPUT NOISE TEMPERATURE AT MF, HF AND VHF TABLE OF CONTENTS FOREWORD DEFINITIONS INTRO

17、DUCTION NOISE GENERATOR TRANSISTOR UNDER TEST BIAS SUPPLIES ATTENUATOR SELECTIVE POST AMPLIFIER Y-FACTOR METHOD OF TEST EFFECT OF SECOND-STAGE NOISE EFFECT OF NOISE GENERATOR TERMINATION TEMPERATURE Page -ii_ 1 2 3 3 4 5 5 6 8 8 10 11-12 13-14 15-16 _i_ RS-311-A FOREWORD This Standard describes a te

18、st method for measurement of transistor noise figure and effective input noise temperature at MF, HF, and VHF. This method is a revision of RS-311 and incorporates material previously found in RS-283, and as such rescinds RS- 283 since it was found deficient in test method details and definitions fo

19、r noise figure measurements. Also, RS-311-A adds the necessary information to make “effective input noise temperature” measurements. The noise definitions are identical to that found in JEDEC Standard No. 77 and do not conflict with the IEC documents, found in 47(Secretariat)558/548 as approved in T

20、okyo, June 1975. -ii_ RS-311-A Page 1 MEASUREMENT OF TRANSISTOR NOISE FIGURE AND EFFECTIVE INPUT NOISE TEMPERATURE AT MF, HF AND VHF (From EIA Standards Proposal No. 1307, formulated under the cognizance of EIA/ JEDEC JC-25 Committee on Transistors.) 1.0 DEFINITIONS 1.1 Noise Temperature (symbol: T,

21、) The uniform physical absolute temperature in degrees kelvin, at which a network (and all its sources, if a multiport) would have to be maintained if it (and its sources) were passive in order to make available (or deliver) the same random noise power per unit bandwidth (spectral density) at a give

22、n frequency as is actually available (or delivered) from the network. 1.2 Reference Noise Temperature (symbol: To) A specified absolute temperature in degrees kelvin, to be assumed as a noise temperature at the input ports of a network when calculating certain noise parameters, and for normalizing p

23、urposes. When the reference noise temperature is 290 K, it is considered to be the standard reference noise temperature. 1.3 Average Noise Figure, Average Noise Factor (symbol: F) Rate of: (1) the total output noise power within an output frequency band when the noise temperature of all input termin

24、ations is at the reference noise temperature, To, at all frequencies that contribute to the output noise (2) that part of (1) caused by the noise of the signal-input termination within the signal-input frequency band. See Appendix I-A for specific definitions relating to mixer diodes. 1.4 Effective

25、Average Input Noise Temperature (symbol: 7,) The noise temperature in degrees kelvin which, assigned to the input impedance termination(s) at all frequencies of a noise free equivalent of the transistor, would yield the same total noise power in an output termination as that of an actual transistor

26、connected to noise free equivalents of the input termination(s). See Appendix I-B for specific definitions relating to twoports or mixers. RS-311-A Page 2 1.5 Spot Noise Figure, Spot Noise Factor (symbol: F) Ratio of: (1) the total output noise power perunit bandwidth (spectral density) at a single

27、output frequency when the noise temperature of all input terminations is at the reference noise temperature, To, at all frequencies that contribute to the output noise to: (2) that part of (1) caused by the noise of the signal-input termination at the signal-input frequency. Reference JEDEC Standard

28、 No. 77, October, 1981,. These de- finitions have been adopted by IEC/TC47. 2.0 INTRODUCTION The noise figure and the effective input noise temperature of a transistor at MF, HF or VHF frequencies (300 kHz - 300 MHz) can be measured in a circuit as outlined in the block diagram below. FIGURE 1 The v

29、alues for the source resistance of the noise generator, the dc operating conditions and test frequency, should be as specified. These usually depend upon the application and the optimum conditions for any particular device. The transistor can be matched to give optimum gain, optimum noise figure, or

30、 il compromise between these two conditions. Theoretical analysis and empirical experiments have shown that if the overall system relative bandwidth is 15% or less, the measured noise figure will be within a few percent of the true spot noise figure (where I3 = 1 Hz). For average (broad-band) noise

31、figure measurements, noise bandwidth must be as specified. RS-311-A Page 3 3.0 NOISE GENERATOR A suitably calibrated noise generator shall be used. Care should be taken to avoid errors due to series inductance in the noise generator which can be serious, particularly at high frequencies. All resisto

32、rs which make up the effective noise source for the transistor under test shall be of a low noise type, such as deposited metal film resistors, in order to minimize contact and breakdown noise. 4.0 TRANSISTOR UNDER TEST The transistor under test shall be inserted in an amplifier circuit having the g

33、eneral configuration for bipolar transistors shown in Figure 2, or a cor- responding common-source circuit for field-effect transistors. A similar con- figuration in which the transistor is operated in the common-base (common- gate) or common-collector (common-drain) connections may be used. NEUTRAL

34、I- ZATION (OPTIONAL) INPUT _ TUNE1 ) ($9 - ;h8 +11, F = 10 log 1.537 = 1.87 dB. Rut with T g = 20” C (293.18 K) instead of 35” C, then F = 10 log 1.589 = 2.01 dB. Using Eq2 with Tg = 35C, 580O(kelvins/volt) IDR + T - YT = (580(j) (0.0016) (50).+ 308.18 - 2(308.18) (Y-l) (2-l) 7, = 155.82 K or with T

35、g = 20 C 7,: = 170.82 K. RS-311-A Page 8 9.0 EFFECT OF SECOND-STAGE NOISE At higher frequencies where the noise output of the transistor under test is not 15 dB above the selective amplifier noise, an attenuator may be used to obtain a correction for Fl, the noise figure of the transistor alone in t

36、erms of the overall noise figure Fl2. To do this, the input impedance of the post amplifier must be matched to the attenuator. (See Appendix N). 10.0 EFFECT OF NOISE GENERATOR TERMINATION TEMPERATURE Equation 1 contains a correction for the effect of Tg being at a temperature other than 290 K. The a

37、mount of this correction can be read from the curve on the following page. RS-311-A 0.3 0.2 0.1 0 -0.3 -0.4 -O.! 5 - -2 - - - I -4 I I r I I t I - - Page 9 NOISE FIGURE CORRECTION FOR TERMINATION .TEMPERATURE Tg * 270 K TO 325K I 0 2 4 6 6 10 MEASURED NOISE FIGURE (Fm) IN dB RS-311-A Page 10 APPENDI

38、X I (A) ADDITIONAL DEFINITIONS RELATING TO MIXER DIODES (1) Overall Average Noise Figure (of a mixer diode) (symbol: F,) The average noise figure of the cascaded combination of a mixer and an IF amplifier. (2) Standard Overall Average Noise Figure (of a mixer diode) (symbol: F,) The overall average

39、noise figure when the average noise figure of the IF amplifier is a specified standard value (usually 1.5 dl3) and the passband of the IF amplifier is sufficiently narrower than that of the mixer so that the mixer conversion loss and output noise temperature are essentially constant over the IF pass

40、band. 03) ADDITIONAL DEFINITIONS RELATING TO TWOPORTS AND MIXERS (1) Equivalent Input Noise Voltage (of a twoport) (symbol: Vn) The voltage of an ideal voltage source (having an internal impedance equal to zero) in series with the input terminals of the device that represents the part of the interna

41、lly generated noise that can properly be represented by a voltage source. NOTE: In the definition, the equivalent input noise current, wlich would be needed for a complete and precise description of the device noise, is neqlected. If the axternal source impedance is zero, the noise voltage represent

42、s the total noise. (2) Equivalent Input Noise Current (of a twoporl) (symbol: In) The current of an ideal current source (having an internal impedance equal to infinity) in parallel with the input terminals of the device that represents the part of the internally generated noise that can properly be

43、 represented by a current source. NOTE: In the definition, the equivalent input noise voltage which would be needed for a complete and precise description of the device noise is neglected. If the external source impedance is infinite, the noise current represents the total noise. (3) Conversion Loss

44、 (of a mixer, mixer diode or harmonic generator) (symbol: L,) The ratio of available input power at a sinqle frequency to the available siqnal-output power, ,ot including intrinsic mixer noise nr power l,onverted from other than the signal-input frequency. NOTE: Delivered signal-output power may be

45、used, in which cnsc thc loss is referred to as “conversion insertion loss”. RS-311-A Page 11 APPENDIX II MEASUREMENT OF NOISE FIGURE OF A DEVICE BY THE Y-FACTOR, NOISE GENERATOR METHOD Definition T = Effective Input Noise Temperature e Introduction To measure Fe of a device, the input termination te

46、mpcratun: is changed from Tg (hot) to Tg (cold) at all frequencies. The relative output noise powers are NTgh and Ng3 respectively. Letting Y = NTgh/NTgc, we can express Tet, _ Te = YTgc (1) Y-l (2) where Tgh = Tg (hot) and Tgc = Tg (cold). This is commonly called the Y-Futurr, T, . RS-311-A Page 12

47、 APPENDIX II (continued) Noise Sources Total nol.) RS-311-A Page 13 APPENDIX III MEASUREMENT OF NOISE FIGURE OF A DEVICE BY THE Y-FACTOR, NOISE GENERATOR METHOD Introduction If the effective average input noise temperature, r, is known, the average noise figure, r, can be calculated from the followi

48、ng relationship for single response amp1ifiers.I T F=+- 4 1, where =fe is expressed in K.2 Combining (8) and (9) r= (q12k290) I DR Y-l . g - and, in general, F = Excess Noise Temperature Ratio in dB -10 log (Y-l). RS-311-A Page 15 APPENDIX IV F12=F, +(FZ- t).2(F2_ ,) 12 (I I) RS-311-A Page 16 APPENDIX IV (continued) 32.M = 4.5 lll% 6 II11 + IO log).oo = 4.5 dll 6 III + 5.6% III%, = 4.12 d11.